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2 research outputs found
Application of Defect Conversion Layer by Solution Growth for Reduction of TSDs in 4H-SiC Bulk Crystals by PVT Growth
Author
Hajime Okumura
Hiromasa Suo
+4Â more
Naoyoshi Komatsu
Takeshi Mitani
Tomohisa Kato
Yuichiro Hayashi
Publication venue
'Trans Tech Publications, Ltd.'
Publication date
Field of study
No full text
Crossref
Temperature dependence of double Shockley stacking fault behavior in nitrogen-doped 4H-SiC studied by in-situ synchrotron X-ray topography
Author
Anderson
Chen
+41Â more
Chou
Feng
Foreman
Fujie
Fumihiro Fujie
Haruhiko Koizumi
Hiromasa Suo
Huang
Idrissi
Idrissi
Irmscher
Kamitani
Kato
Kenji Hanada
Kimoto
Kuhr
Kusunoki
Lambrecht
Lancin
Lindefelt
Liu
Masuda
Matsuhata
Miao
Miho Tagawa
Nabarro
Ohtani
Regula
Rost
Saka
Shunta Harada
Straubinger
Suo
Takahashi
Taniguchi
Tokuda
Tokuda
Tokuda
Tomohisa Kato
Toru Ujihara
Yamashita
Publication venue
'Elsevier BV'
Publication date
Field of study
No full text
Crossref