Microwave Properties of Ba(0.6)K(0.4)BiO(3) Crystals

We report on field-induced variations of the microwave surface resistance at 9.6 GHz of Ba(0.6)K(0.4)BiO(3) crystals. Energy losses have been investigated as a function of the static magnetic field in the range of temperatures 4.2 K - Tc. By analyzing the experimental results in the framework of the Coffey and Clem model we determine the temperature dependence of the first-penetration field, upper critical field and depinning frequency. The results show that the pinning energy of this bismuthate superconductor is weaker than those of cuprates.Comment: 6 pages, 8 embedded figure

Measurements of the absolute value of the penetration depth in high-Tc T_c superconductors using a tunnel diode resonator

A method is presented to measure the absolute value of the London penetration depth, $\lambda$, from the frequency shift of a resonator. The technique involves coating a high-$T_c$ superconductor (HTSC) with film of low - Tc material of known thickness and penetration depth. The method is applied to measure London penetration depth in YBa2Cu3O{7-\delta} (YBCO) Bi2Sr2CaCu2O{8+\delta} (BSCCO) and Pr{1.85}Ce{0.15}CuO{4-\delta}$(PCCO). For YBCO and BSCCO, the values of$\lambda (0)$are in agreement with the literature values. For PCCO$\lambda \approx 2790$ \AA, reported for the first time.Comment: RevTex 4 (beta 4). 4 pages, 4 EPS figures. Submitted to Appl. Phys. Let

Muon spin rotation study of the magnetic penetration depth in the intercalated graphite superconductor CaC6

We report temperature- and magnetic field-dependent bulk muon spin rotation measurements in a c-axis oriented superconductor CaC6 in the mixed state. Using both a simple second moment analysis and the more precise analytical Ginzburg-Landau model, we obtained a field independent in-plane magnetic penetration depth {\lambda}ab (0) = 72(3) nm. The temperature dependencies of the normalized muon spin relaxation rate and of the normalized superfluid density result to be identical, and both are well represented by the clean limit BCS model with 2\Delta/kB Tc = 3.6(1), suggesting that CaC6 is a fully gapped BCS superconductor in the clean limit regime.Comment: Accepted for publication in PR

Effect of He-appm/DPA ratio on the damage microstructure of tungsten

In-situ ion irradiation and transmission electron microscopy has been used to examine the effects of the He appm to DPA ratio, temperature and dose on the damage structure of tungsten (W). Irradiations were performed with 15 or 60 keV He+ ions, achieving He-appm/displacements per atom (DPA) ratios of ~40,000 and ~2000, respectively, at temperatures between 500 and 1000°C to a dose of ~3 DPA. A high number of small dislocation loops with sizes around 5–20 nm and a He bubble lattice were observed for both He-appm/DPA ratios at 500°C with a bubble size ~1.5 nm. Using the g.b=0 criterion the loops were characterised as b = ±1/2 type. At 750°C bubbles do not form an ordered array and are larger in size compared to the irradiations at 500°C, with a diameter of ~3 nm. Fewer dislocation loops were observed at this temperature and were also characterised to be b = ±1/2 type. At 1000°C, no dislocation loops were observed and bubbles grew as a function of fluence attributed to vacancy mobility being higher and vacancy clusters becoming mobile

Grain size threshold for enhanced irradiation resistance in nanocrystalline and ultrafine tungsten

Nanocrystalline metals are considered highly radiation-resistant materials due to their large grain boundary areas. Here, the existence of a grain size threshold for enhanced irradiation resistance in high-temperature helium-irradiated nanocrystalline and ultrafine tungsten is demonstrated. Average bubble density, projected bubble area and the corresponding change in volume were measured via transmission electron microscopy and plotted as a function of grain size for two ion fluences. Nanocrystalline grains of less than 35 nm size possess ∼10–20 times lower change in volume than ultrafine grains and this is discussed in terms of the grain boundaries defect sink efficienc

Helium irradiation effects in polycrystalline Si, silica, and single crystal Si

Transmission electron microscopy (TEM) has been used to investigate the effects of room temperature 6 keV helium ion irradiation of a thin (≈55 nm thick) tri-layer consisting of polycrystalline Si, silica, and single-crystal Si. The ion irradiation was carried out in situ within the TEM under conditions where approximately 24% of the incident ions came to rest in the specimen. This paper reports on the comparative development of irradiation-induced defects (primarily helium bubbles) in the polycrystalline Si and single-crystal Si under ion irradiation and provides direct measurement of a radiation-induced increase in the width of the polycrystalline layer and shrinkage of the silica layer. Analysis using TEM and electron energy-loss spectroscopy has led to the hypothesis that these result from helium-bubble-induced swelling of the silicon and radiation-induced viscoelastic flow processes in the silica under the influence of stresses applied by the swollen Si layers. The silicon and silica layers are sputtered as a result of the helium ion irradiation; however, this is estimated to be a relatively minor effect with swelling and stress-related viscoelastic flow being the dominant mechanisms of dimensional change