174 research outputs found
Anisotropic Electron Spin Lifetime in (In,Ga)As/GaAs (110) Quantum Wells
Anisotropic electron spin lifetimes in strained undoped (In,Ga)As/GaAs (110)
quantum wells of different width and height are investigated by time-resolved
Faraday rotation and time-resolved transmission and are compared to the
(001)-orientation. From the suppression of spin precession, the ratio of
in-plane to out-of-plane spin lifetimes is calculated. Whereas the ratio
increases with In concentration in agreement with theory, a surprisingly high
anisotropy of 480 is observed for the broadest quantum well, when expressed in
terms of spin relaxation times.Comment: 4 pages, 4 figures, revise
Dimethylpropyleneurea-water mixtures .1. Physical-properties.
Densities, refractive indices, viscosities, dielectric constants and the absorptions of several solvatochromic indicators have been determined at 25°C for mixtures of N,N′-dimethyl-N,N′-propyleneurea (DMPU) and water in the complete mole fraction scale. the results are compared with the properties of hexamethylphosphotriamide (HMPT) and its mixtures with water which show a striking similarity to DMPU and its mixtures with water. Since HMPT was found to be carcinogenic in animal tests, DMPU offers a suitable substitute since it may be regarded as safe under laboratory conditions
In situ x-ray diffraction study of epitaxial growth of ordered Fe3Si films
Molecular beam epitaxy of Fe3Si on GaAs(001) is studied in situ by grazing
incidence x-ray diffraction. Layer-by-layer growth of Fe3Si films is observed
at a low growth rate and substrate temperatures near 200 degrees Celsius. A
damping of x-ray intensity oscillations due to a gradual surface roughening
during growth is found. The corresponding sequence of coverages of the
different terrace levels is obtained. The after-deposition surface recovery is
very slow. Annealing at 310 degrees Celsius combined with the deposition of one
monolayer of Fe3Si restores the surface to high perfection and minimal
roughness. Our stoichiometric films possess long-range order and a high quality
heteroepitaxial interface.Comment: 8 pages, 3 figure
Charge transfer and coherence dynamics of tunnelling system coupled to a harmonic oscillator
We study the transition probability and coherence of a two-site system,
interacting with an oscillator. Both properties depend on the initial
preparation. The oscillator is prepared in a thermal state and, even though it
cannot be considered as an extended bath, it produces decoherence because of
the large number of states involved in the dynamics. In the case in which the
oscillator is intially displaced a coherent dynamics of change entangled with
oscillator modes takes place. Coherency is however degraded as far as the
oscillator mass increases producing a increasingly large recoherence time.
Calculations are carried on by exact diagonalization and compared with two
semiclassical approximations. The role of the quantum effects are highlighted
in the long-time dynamics, where semiclassical approaches give rise to a
dissipative behaviour. Moreover, we find that the oscillator dynamics has to be
taken into account, even in a semiclassical approximation, in order to
reproduce a thermally activated enhancement of the transition probability
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Lattice matched Volmer–Weber growth of Fe3Si on GaAs(001) - the influence of the growth rate
We investigate the formation of lattice matched single-crystalline Fe3Si/GaAs(001) ferromagnet/semiconductor hybrid structures by Volmer-Weber island growth, starting from the epitaxial growth of isolated Fe3Si islands up to the formation of continuous films as a result of island coalescence. We find coherent defect-free layers exhibiting compositional disorder near the Fe3Si/GaAs - interface for higher growth rates, whereas they are fully ordered for lower growth rates. © 2019 IOP Publishing Ltd
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