2,284 research outputs found
Absence of ferromagnetism in V-implanted ZnO single crystals
The structural and magnetic properties of V doped ZnO are presented. V ions
were introduced into hydrothermal ZnO single crystals by ion implantation with
fluences of 1.2*10^16 to 6*10^16 cm^-2. Post-implantation annealing was
performed in high vacuum from 823 K to 1023 K. The ZnO host material still
partly remains in a crystalline state after irradiation, and is partly
recovered by annealing. The V ions show a thermal mobility as revealed by depth
profile Auger electron spectroscopy. Synchrotron radiation x-ray diffraction
revealed no secondary phase formation which indicates the substitution of V
onto Zn site. However in all samples no pronounced ferromagnetism was observed
down to 5 K by a superconducting quantum interference device magnetometer.Comment: 13 pages, 4 figs, MMM conference 2007, accepted by J. Appl. Phy
Institute of Ion Beam Physics and Materials Research: Annual Report 2001
Summary of the scientific activities of the institute in 2001 including selected highlight reports, short research contributions and an extended statistics overview
Fe-implanted ZnO: Magnetic precipitates versus dilution
Nowadays ferromagnetism is often found in potential diluted magnetic
semiconductor systems. However, many authors argue that the observed
ferromagnetism stems from ferromagnetic precipitates or spinodal decomposition
rather than from carrier mediated magnetic impurities, as required for a
diluted magnetic semiconductor. In the present paper we answer this question
for Fe-implanted ZnO single crystals comprehensively. Different implantation
fluences and temperatures and post-implantation annealing temperatures have
been chosen in order to evaluate the structural and magnetic properties over a
wide range of parameters. Three different regimes with respect to the Fe
concentration and the process temperature are found: 1) Disperse Fe and
Fe at low Fe concentrations and low processing temperatures, 2)
FeZnO at very high processing temperatures and 3) an intermediate
regime with a co-existence of metallic Fe (Fe) and ionic Fe (Fe and
Fe). Ferromagnetism is only observed in the latter two cases, where
inverted ZnFeO and -Fe nanocrystals are the origin of the
observed ferromagnetic behavior, respectively. The ionic Fe in the last case
could contribute to a carrier mediated coupling. However, their separation is
too large to couple ferromagnetically due to the lack of p-type carrier. For
comparison investigations of Fe-implanted epitaxial ZnO thin films are
presented.Comment: 14 pages, 17 figure
System-environment correlations and Non-Markovian dynamics
We determine the total state dynamics of a dephasing open quantum system
using the standard environment of harmonic oscillators. Of particular interest
are random unitary approaches to the same reduced dynamics and
system-environment correlations in the full model. Concentrating on a model
with an at times negative dephasing rate, the issue of "non-Markovianity" will
also be addressed. Crucially, given the quantum environment, the appearance of
non-Markovian dynamics turns out to be accompanied by a loss of
system-environment correlations. Depending on the initial purity of the qubit
state, these system-environment correlations may be purely classical over the
whole relevant time scale, or there may be intervals of genuine
system-environment entanglement. In the latter case, we see no obvious relation
between the build-up or decay of these quantum correlations and
"Non-Markovianity"
Observation of Coulomb-Assisted Dipole-Forbidden Intraexciton Transitions in Semiconductors
We use terahertz pulses to induce resonant transitions between the
eigenstates of optically generated exciton populations in a high-quality
semiconductor quantum-well sample. Monitoring the excitonic photoluminescence,
we observe transient quenching of the exciton emission, which we attribute
to the terahertz-induced -to- excitation. Simultaneously, a pronounced
enhancement of the -exciton emission is observed, despite the -to-
transition being dipole forbidden. A microscopic many-body theory explains the
experimental observations as a Coulomb-scattering mixing of the 2 and 2
states, yielding an effective terahertz transition between the 1 and 2
populations.Comment: 5 pages, 3 figure
Bandgap narrowing in Mn doped GaAs probed by room-temperature photoluminescence
The electronic band structure of the (Ga,Mn)As system has been one of the
most intriguing problems in solid state physics over the past two decades.
Determination of the band structure evolution with increasing Mn concentration
is a key issue to understand the origin of ferromagnetism. Here we present room
temperature photoluminescence and ellipsometry measurements of
Ga_{100%-x}Mn_{x}As alloy. The up-shift of the valence-band is proven by the
red shift of the room temperature near band gap emission from the
Ga_{100%-x}Mn_{x}As alloy with increasing Mn content. It is shown that even a
doping by 0.02 at.% of Mn affects the valence-band edge and it merges with the
impurity band for a Mn concentration as low as 0.6 at.%. Both X-ray diffraction
pattern and high resolution cross-sectional TEM images confirmed full
recrystallization of the implanted layer and GaMnAs alloy formation.Comment: 24 pages, 7 figures, accepted at Phys. Rev. B 201
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