The electronic band structure of the (Ga,Mn)As system has been one of the
most intriguing problems in solid state physics over the past two decades.
Determination of the band structure evolution with increasing Mn concentration
is a key issue to understand the origin of ferromagnetism. Here we present room
temperature photoluminescence and ellipsometry measurements of
Ga_{100%-x}Mn_{x}As alloy. The up-shift of the valence-band is proven by the
red shift of the room temperature near band gap emission from the
Ga_{100%-x}Mn_{x}As alloy with increasing Mn content. It is shown that even a
doping by 0.02 at.% of Mn affects the valence-band edge and it merges with the
impurity band for a Mn concentration as low as 0.6 at.%. Both X-ray diffraction
pattern and high resolution cross-sectional TEM images confirmed full
recrystallization of the implanted layer and GaMnAs alloy formation.Comment: 24 pages, 7 figures, accepted at Phys. Rev. B 201
