We have prepared the dilute magnetic semiconductor (DMS) InMnAs with
different Mn concentrations by ion implantation and pulsed laser melting. The
Curie temperature of the In1-xMnxAs epilayer depends on the Mn concentration x,
reaching 82 K for x=0.105. The substitution of Mn ions at the Indium sites
induces a compressive strain perpendicular to the InMnAs layer and a tensile
strain along the in-plane direction. This gives rise to a large perpendicular
magnetic anisotropy, which is often needed for the demonstration of electrical
control of magnetization and for spin-transfer-torque induced magnetization
reversal.Comment: 16 pages, 5 figure
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