Object-guided Spatial Attention in Touch: Holding the Same Object with Both Hands Delays Attentional Selection

Abstract Previous research has shown that attention to a specific location on a uniform visual object spreads throughout the entire object. Here we demonstrate that, similar to the visual system, spatial attention in touch can be object guided. We measured event-related brain potentials to tactile stimuli arising from objects held by observers' hands, when the hands were placed either near each other or far apart, holding two separate objects, or when they were far apart but holding a common object. Observers covertly oriented their attention to the left, to the right, or to both hands, following bilaterally presented tactile cues indicating likely tactile target location(s). Attentional modulations for tactile stimuli at attended compared to unattended locations were present in the time range of early somatosensory components only when the hands were far apart, but not when they were near. This was found to reflect enhanced somatosensory processing at attended locations rather than suppressed processing at unattended locations. Crucially, holding a common object with both hands delayed attentional selection, similar to when the hands were near. This shows that the proprioceptive distance effect on tactile attentional selection arises when distant event locations can be treated as separate and unconnected sources of tactile stimulation, but not when they form part of the same object. These findings suggest that, similar to visual attention, both space- and object-based attentional mechanisms can operate when we select between tactile events on our body surface.</jats:p

Electronic and Thermoelectric Properties of RuIn_{3-x}A_{x} (A = Sn, Zn)

Recently, we reported [M. Wagner et al., J. Mater. Res. 26, 1886 (2011)] transport measurements on the semiconducting intermetallic system RuIn3 and its substitution derivatives RuIn_{3-x}A_{x} (A = Sn, Zn). Higher values of the thermoelectric figure of merit (zT = 0.45) compared to the parent compound were achieved by chemical substitution. Here, using density functional theory based calculations, we report on the microscopic picture behind the measured phenomenon. We show in detail that the electronic structure of the substitution variants of the intermetallic system RuIn_{3-x}A_{x} (A = Sn, Zn) changes in a rigid-band like fashion. This behavior makes possible the fine tuning of the substitution concentration to take advantage of the sharp peak-like features in the density of states of the semiconducting parent compound. Trends in the transport properties calculated using the semi-classical Boltzmann transport equations within the constant scattering time approximation are in good agreement with the former experimental results for RuIn_{3-x}Sn_{x}. Based on the calculated thermopower for the p-doped systems, we reinvestigated the Zn-substituted derivative and obtained ZnO-free RuIn_{3-x}Zn_{x}. The new experimental results are consistent with the calculated trend in thermopower and yield large zT value of 0.8.Comment: PRB Accepted, 11 pages, 10 figure