Early appearance of 2, 3-butanediol in acute myocardial infarction. A new marker for ischaemia?

In 28 patients with acute myocardial infarction, the release pattern of 2, 3-butanediol (BD), a product of intermediary metabolism, and creatine kinase activity (CK) in blood were compared. Whereas CKat entry was low in all patients, the BD level was elevated in 18 (64%). However, BD returned to normal levels during the next 24 h whereas CK increased. The BD level at entry did not allow differentiation between patients with transmural or non-transmural infarction; it was independent of clinical findings and biochemical parameters. We suggest that, in patients with acute myocardial infarction, elevated levels of BD originates from myo-cardial metabolism. Whether it reflects ongoing ischaemia or reperfusion of the infarcted area remains unresolve

Microscopic correlation between chemical and electronic states in epitaxial graphene on SiC(000-1)

We present energy filtered electron emission spectromicroscopy with spatial and wave-vector resolution on few layer epitaxial graphene on SiC$(000-1) grown by furnace annealing. Low energy electron microscopy shows that more than 80% of the sample is covered by 2-3 graphene layers. C1s spectromicroscopy provides an independent measurement of the graphene thickness distribution map. The work function, measured by photoelectron emission microscopy (PEEM), varies across the surface from 4.34 to 4.50eV according to both the graphene thickness and the graphene-SiC interface chemical state. At least two SiC surface chemical states (i.e., two different SiC surface structures) are present at the graphene/SiC interface. Charge transfer occurs at each graphene/SiC interface. K-space PEEM gives 3D maps of the k_|| pi - pi* band dispersion in micron scale regions show that the Dirac point shifts as a function of graphene thickness. Novel Bragg diffraction of the Dirac cones via the superlattice formed by the commensurately rotated graphene sheets is observed. The experiments underline the importance of lateral and spectroscopic resolution on the scale of future electronic devices in order to precisely characterize the transport properties and band alignments

Highly-ordered graphene for two dimensional electronics

With expanding interest in graphene-based electronics, it is crucial that high quality graphene films be grown. Sublimation of Si from the 4H-SiC(0001) Si-terminated) surface in ultrahigh vacuum is a demonstrated method to produce epitaxial graphene sheets on a semiconductor. In this paper we show that graphene grown from the SiC$(000\bar{1})$ (C-terminated) surface are of higher quality than those previously grown on SiC(0001). Graphene grown on the C-face can have structural domain sizes more than three times larger than those grown on the Si-face while at the same time reducing SiC substrate disorder from sublimation by an order of magnitude.Comment: Submitted to Appl. Phys. Let

Electronic Cooling via Interlayer Coulomb Coupling in Multilayer Epitaxial Graphene

In van der Waals bonded or rotationally disordered multilayer stacks of two-dimensional (2D) materials, the electronic states remain tightly confined within individual 2D layers. As a result, electron-phonon interactions occur primarily within layers and interlayer electrical conductivities are low. In addition, strong covalent in-plane intralayer bonding combined with weak van der Waals interlayer bonding results in weak phonon-mediated thermal coupling between the layers. We demonstrate here, however, that Coulomb interactions between electrons in different layers of multilayer epitaxial graphene provide an important mechanism for interlayer thermal transport even though all electronic states are strongly confined within individual 2D layers. This effect is manifested in the relaxation dynamics of hot carriers in ultrafast time-resolved terahertz spectroscopy. We develop a theory of interlayer Coulomb coupling containing no free parameters that accounts for the experimentally observed trends in hot-carrier dynamics as temperature and the number of layers is varied.Comment: 54 pages, 15 figures, uses documentclass{achemso}, M.T.M. and J.R.T. contributed equally to this wor

Electronic structure of triangular, hexagonal and round graphene flakes near the Fermi level

The electronic shell structure of triangular, hexagonal and round graphene quantum dots (flakes) near the Fermi level has been studied using a tight-binding method. The results show that close to the Fermi level the shell structure of a triangular flake is that of free massless particles, and that triangles with an armchair edge show an additional sequence of levels ("ghost states"). These levels result from the graphene band structure and the plane wave solution of the wave equation, and they are absent for triangles with an zigzag edge. All zigzag triangles exhibit a prominent edge state at the Fermi level, and few low-energy conduction electron states occur both in triangular and hexagonal flakes due to symmetry reasons. Armchair triangles can be used as building blocks for other types of flakes that support the ghost states. Edge roughness has only a small effect on the level structure of the triangular flakes, but the effect is considerably enhanced in the other types of flakes. In round flakes, the states near the Fermi level depend strongly on the flake radius, and they are always localized on the zigzag parts of the edge

How harmonic is dipole resonance of metal clusters?

We discuss the degree of anharmonicity of dipole plasmon resonances in metal clusters. We employ the time-dependent variational principle and show that the relative shift of the second phonon scales as $N^{-4/3}$ in energy, $N$ being the number of particles. This scaling property coincides with that for nuclear giant resonances. Contrary to the previous study based on the boson-expansion method, the deviation from the harmonic limit is found to be almost negligible for Na clusters, the result being consistent with the recent experimental observation.Comment: RevTex, 8 page

First direct observation of a nearly ideal graphene band structure

Angle-resolved photoemission and X-ray diffraction experiments show that multilayer epitaxial graphene grown on the SiC(000-1) surface is a new form of carbon that is composed of effectively isolated graphene sheets. The unique rotational stacking of these films cause adjacent graphene layers to electronically decouple leading to a set of nearly independent linearly dispersing bands (Dirac cones) at the graphene K-point. Each cone corresponds to an individual macro-scale graphene sheet in a multilayer stack where AB-stacked sheets can be considered as low density faults.Comment: 5 pages, 4 figure

Theoretical Aspects of the Fractional Quantum Hall Effect in Graphene

We review the theoretical basis and understanding of electronic interactions in graphene Landau levels, in the limit of strong correlations. This limit occurs when inter-Landau-level excitations may be omitted because they belong to a high-energy sector, whereas the low-energy excitations only involve the same level, such that the kinetic energy (of the Landau level) is an unimportant constant. Two prominent effects emerge in this limit of strong electronic correlations: generalised quantum Hall ferromagnetic states that profit from the approximate four-fold spin-valley degeneracy of graphene's Landau levels and the fractional quantum Hall effect. Here, we discuss these effects in the framework of an SU(4)-symmetric theory, in comparison with available experimental observations.Comment: 12 pages, 3 figures; review for the proceedings of the Nobel Symposium on Graphene and Quantum Matte

The structural properties of the multi-layer graphene/4H-SiC(000-1) system as determined by Surface X-ray Diffraction

We present a structural analysis of the multi-layer graphene-4HSiC(000-1}) system using Surface X-Ray Reflectivity. We show for the first time that graphene films grown on the C-terminated (000-1}) surface have a graphene-substrate bond length that is very short (0.162nm). The measured distance rules out a weak Van der Waals interaction to the substrate and instead indicates a strong bond between the first graphene layer and the bulk as predicted by ab-initio calculations. The measurements also indicate that multi-layer graphene grows in a near turbostratic mode on this surface. This result may explain the lack of a broken graphene symmetry inferred from conduction measurements on this system [C. Berger et al., Science 312, 1191 (2006)].Comment: 9 pages with 6 figure