Qualitative analysis of growth mechanism of polycrystalline InAs thin films grown by molecular beam epitaxy

The mechanism of surfaces/interfaces and precise control of growth morphology is a key parameter for any specific device application. Herein, we report on a qualitative growth study of molecular beam epitaxy-grown polycrystalline InAs thin films on a lattice-mismatched Si(1 0 0) substrate using atomic force microscopy. The height-height correlation function (HHCF) and power spectral density function (PSDF) were employed to analyze the surface structures. Clear oscillatory behavior in the HHCF for sufficiently larger lateral distances suggests a mound-like morphology, which was confirmed by the existence of a characteristic frequency peak in the PSDF. The growth mechanism is described qualitatively by the Schwoebel barrier (roughening) effect coupled with the Mullins diffusion model (smoothing effect)

Non-contact long-range magnetic stimulation of mechanosensitive ion channels in freely moving animals

Among physical stimulation modalities, magnetism has clear advantages, such as deep penetration and untethered interventions in biological subjects. However, some of the working principles and effectiveness of existing magnetic neurostimulation approaches have been challenged, leaving questions to be answered. Here we introduce m-Torquer, a magnetic toolkit that mimics magnetoreception in nature. It comprises a nanoscale magnetic torque actuator and a circular magnet array, which deliver piconewton-scale forces to cells over a working range of similar to 70 cm. With m-Torquer, stimulation of neurons expressing bona fide mechanosensitive ion channel Piezo1 enables consistent and reproducible neuromodulation in freely moving mice. With its long working distance and cellular targeting capability, m-Torquer provides versatility in its use, which can range from single cells to in vivo systems, with the potential application in large animals such as primates.11Nsciescopu

Vertical monolithic integration of wide- and narrow-bandgap semiconductor nanostructures on graphene films

We report monolithic integration of indium arsenide (InAs) nanorods and zinc oxide (ZnO) nanotubes using a multilayer graphene film as a suspended substrate, and the fabrication of dual-wavelength photodetectors with the hybrid configuration of these materials. For the hybrid nanostructures, ZnO nanotubes and InAs nanorods were grown vertically on the top and bottom surfaces of the graphene films by metal-organic vapor-phase epitaxy and molecular beam epitaxy, respectively. The structural, optical, and electrical characteristics of the hybrid nanostructures were investigated using transmission electron microscopy, spectral photoresponse analysis, and current-voltage measurements. Furthermore, the hybrid nanostructures were used to fabricate dual-wavelength photodetectors sensitive to both ultraviolet and mid-infrared wavelengths

Large-scale, single-oriented ZnO nanostructure on h-BN films for flexible inorganic UV sensors

We report the growth of large-scale, single-oriented zinc oxide (ZnO) nanowall networks on epitaxial hexagonal boron nitride (h-BN) films and their application to flexible inorganic ultraviolet (UV) light sensors. Using catalyst-free metal-organic vapor phase epitaxy, ZnO nanowall networks with good vertical alignment are grown on epitaxial h-BN films. The single-oriented crystal structure of the ZnO nanostructures on h-BN is investigated using x-ray diffraction (XRD) spectroscopy, and the heteroepitaxial relationship between ZnO and h-BN is revealed through synchrotron radiation XRD. Interestingly, when utilizing the grown ZnO nanostructure as a channel for UV sensors, better performance merits such as a high I-UV/I-dark ratio, faster recovery time, and low dark current are achieved if h-BN is employed as a growth template. As an example of inorganic flexible optoelectronic device applications, flexible UV sensors are fabricated using ZnO/h-BN heterostructures owing to the insulating and transferrable nature of h-BN substrates. The sensor maintained an excellent performance, even under highly bent conditions

Individually addressable, high-density vertical nanotube Schottky diode crossbar array

We report on the fabrication of individually addressable, high-density vertical zinc oxide (ZnO) nanotube Schottky diode arrays. The individually addressable nanotube Schottky diode arrays were fabricated by arranging the top and bottom electrodes in a crossbar configuration on a free-standing layer consisting of position-controlled ZnO nanotubes on graphene films. The electrical characteristics of each Schottky diode in the arrays were investigated by measuring current-voltage characteristics. We also investigated the variation in device characteristics within an array by spatially mapping the barrier height of individual devices. Additionally, we further confirmed the excellent flexibility and electrical robustness of the free-standing and thin Schottky diode arrays under extreme bending conditions and over multiple cycles. Moreover, the photoresponses of the nanotube Schottky diode arrays were investigated by measuring their spectral responses and current-voltage characteristics under light illuminations, yielding a maximum photocurrent to dark current ratio of 1400 and responsivity of 10(6) A/W. We believe that this work provides a general and rational route for developing many other two-terminal one-dimensional nanostructure device arrays for ultra-high density electronic and optoelectronic devices

In Situ Doping of the PEDOT Top Electrode for All-Solution-Processed Semitransparent Organic Solar Cells

The development of an ideal solution-processable transparent electrode has been a challenge in the field of all-solution-processed semitransparent organic solar cells (ST-OSCs). We present a novel poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) top electrode for all-solution-processed ST-OSCs through in situ doping of PEDOT:PSS. A strongly polarized long perfluoroalkyl (n = 8) chain-anchored sulfonic acid effectively eliminates insulating PSS and spontaneously crystallizes PEDOT at room temperature, leading to outstanding electrical properties and transparency of PEDOT top electrodes. Doped PEDOT-based ST-OSCs yield a high power conversion efficiency of 10.9% while providing an average visible transmittance of 26.0% in the visible range. Moreover, the strong infrared reflectivity of PEDOT enables ST-OSCs to reject 62.6% of the heat emitted by sunlight (76.7% from infrared radiation), outperforming the thermal insulation capability of commercial tint films. This light management approach using PEDOT enables ST-OSCs to simultaneously provide energy generation and energy savings, making it the first discovery toward sustainable energy in buildings

Impact of Ternary Solvent on the Grain Size and Defects of Perovskite Layer to Realize a Stable Morphology for Efficient Inverted Solar Cells

Recent reports reveal that a smooth and uniform surface morphology can endow perovskite solar cells with excellent stability and remarkable power conversion efficiency (PCE). Herein, a ternary solvent strategy is employed using dimethylformamide (DMF), dimethyl-sulfoxide (DMSO), and γ-butyrolactone (GBL) to improve contact between the charge transporting layers and the perovskite layer. This approach yields enhanced surface morphology, charge extraction, and passivation. The thermally stable intermediates generated through the ternary solvent promote uniform MAPbI3 films with a smooth surface. These intermediates reduce surface roughness, increase grain size, and fill voids or defects in MAPbI3 due to a strong interaction of ternary solvent. The PCE with the ternary solvent (DMF:GBL:DMSO) increases to 20.23% compared to binary solvents of GBL:DMSO and DMF:DMSO. Additionally, ternary solvent engineering is beneficial from an industrial perspective for achieving a stable and uniform morphology of perovskite in large-area device fabrication. © 2023 Wiley-VCH GmbH.FALS

Overcoming the Interfacial Photocatalytic Degradation of Nonfullerene Acceptor-Based Organic Photovoltaics by Introducing a UV-A-Insensitive Titanium Suboxide Layer

Although recent dramatic advances in power conversion efficiencies (PCEs) have resulted in values over 19%, the poor photostability of organic photovoltaics (OPVs) has been a serious bottleneck to their commercialization. The photocatalytic effect, which is caused by incident ultraviolet-A (UV-A, 320–400 nm) light in the most commonly used zinc oxide (ZnOX) electron transport layer (ETL), significantly deteriorates the photostability of OPVs. In this work, we develop a new and facile method to enhance the photostability of nonfullerene acceptor-based OPVs by introducing UV-A-insensitive titanium suboxide (TiOX) ETL. Through an in-depth analysis of mass information at the interface between the ETL and photoactive layer, we confirm that the UV-A-insensitive TiOX suppresses the photocatalytic effect. The resulting device employing the TiOX ETL shows excellent photostability, obtaining 80% of the initial PCE for up to 200 h under 1 sun illumination, which is 10 times longer than that of the conventional ZnOX system (19 h)