Laser-assisted transfer for rapid additive micro-fabrication of electronic devices

Laser-based micro-fabrication techniques can be divided into the two broad categories of subtractive and additive processing. Subtractive embraces the well-established areas of ablation, drilling, cutting and trimming, where the substrate material is post-processed into the desired final form or function. Additive describes a manufacturing process that most recently has captured the news in terms of 3-d printing, where materials and structures are assembled from scratch to form complex 3-d objects. While most additive 3-d printing methods are purely aimed at fabrication of structures, the ability to deposit material on the micron-scale enables the creation of functional, e.g. electronic or photonic, devices [1]. Laser-induced forward transfer (LIFT) is a method for the transfer of functional thin film materials with sub-micron to few millimetre feature sizes [2,3]. It has a unique advantage as the materials can be optimised beforehand in terms of their electrical, mechanical or optical properties. LIFT allows the intact transfer of solid, viscous or matrix-embedded films in an additive fashion. As a direct-write method, no lithography or post-processing is required and does not add complexity to existing laser machining systems, thus LIFT can be applied for the rapid and inexpensive fabrication or repair of electronic devices. While the technique is not limited to a specific range of materials, only a few examples show transfer of inorganic semiconductors. So far, LIFT demonstration of materials such as silicon [4,5] have undergone melting, and hence a phase transition process during the transfer which may not be desirable, compromising or reducing the efficiency of a resulting device. Here, we present our first results on the intact transfer of solid thermoelectric semiconductor materials on a millimetre scale via nanosecond excimer laser-based LIFT. We have studied the transfer and its effect on the phase and physical properties of the printed materials and present a working thermoelectric generator as an example of such a device. Furthermore, results from initial experiments to transfer silicon onto polymeric substrates in an intact state via a Ti:sapphire femtosecond laser are also shown, which illustrate the utility of LIFT for printing micron-scale semiconductor features in the context of flexible electronic applications

Digital micromirror devices for laser-based manufacturing

Digital Micromirror Devices (DMDs), containing arrays of around one million individually-controllable ~10µm square mirrors, provide an extremely cost-effective and practical method to modulate the spatial beam profile of a pulsed laser source for both additive and subtractive laser processing and printing. When demagnified by a factor of ~100 in one dimension (hence ~10,000 in area) a ~1mJ/cm2 laser pulse reflected from the mirrors on the DMD surface that are switched to the 'on' position, attains a fluence of ~10J/cm2 at the workpiece, which is more than sufficient to ablate most materials of interest to the laser-manufacturing community. More familiar in the context of high values of magnification by the laser projection industry, reversing the role to use them for equally high values of demagnification opens up a wealth of possibilities for ablation, multiphoton polymerization, security marking and fabrication of features that perhaps surprisingly can be well below the wavelength of the laser used. Of key relevance is that very high-resolution patterning can be achieved by a single laser pulse, and step-and-repeat processes, when combined with the refresh rates of the DMD pattern that are currently at the 30kHz level, open up the possibility of processing areas of up to 1cm2 per second with micron-scale resolution where each ~100µm x 100µm area patterned per pulse can display arbitrary pixelated content. We will discuss the application of DMD-baser laser processing to the following areas of interest to the laser-manufacturing community

Secure Communications in Millimeter Wave Ad Hoc Networks

Wireless networks with directional antennas, like millimeter wave (mmWave) networks, have enhanced security. For a large-scale mmWave ad hoc network in which eavesdroppers are randomly located, however, eavesdroppers can still intercept the confidential messages, since they may reside in the signal beam. This paper explores the potential of physical layer security in mmWave ad hoc networks. Specifically, we characterize the impact of mmWave channel characteristics, random blockages, and antenna gains on the secrecy performance. For the special case of uniform linear array (ULA), a tractable approach is proposed to evaluate the average achievable secrecy rate. We also characterize the impact of artificial noise in such networks. Our results reveal that in the low transmit power regime, the use of low mmWave frequency achieves better secrecy performance, and when increasing transmit power, a transition from low mmWave frequency to high mmWave frequency is demanded for obtaining a higher secrecy rate. More antennas at the transmitting nodes are needed to decrease the antenna gain obtained by the eavesdroppers when using ULA. Eavesdroppers can intercept more information by using a wide beam pattern. Furthermore, the use of artificial noise may be ineffective forenhancing the secrecy rate

Uplink Performance of Wideband Massive MIMO With One-Bit ADCs

Analog-to-digital converters (ADCs) stand for a significant part of the total power consumption in a massive multiple-input multiple-output (MIMO) base station. One-bit ADCs are one way to reduce power consumption. This paper presents an analysis of the spectral efficiency of single-carrier and orthogonal-frequency-division-multiplexing (OFDM) transmission in massive MIMO systems that use one-bit ADCs. A closed-form achievable rate, i.e., a lower bound on capacity, is derived for a wideband system with a large number of channel taps that employ low-complexity linear channel estimation and symbol detection. Quantization results in two types of error in the symbol detection. The circularly symmetric error becomes Gaussian in massive MIMO and vanishes as the number of antennas grows. The amplitude distortion, which severely degrades the performance of OFDM, is caused by variations between symbol durations in received interference energy. As the number of channel taps grows, the amplitude distortion vanishes and OFDM has the same performance as single-carrier transmission. A main conclusion of this paper is that wideband massive MIMO systems work well with one-bit ADCs. Analog-to-digital converters (ADCs) stand for a significant part of the total power consumption in a massive multiple-input multiple-output (MIMO) base station. One-bit ADCs are one way to reduce power consumption. This paper presents an analysis of the spectral efficiency of single-carrier and orthogonal-frequency-division-multiplexing (OFDM) transmission in massive MIMO systems that use one-bit ADCs. A closed-form achievable rate, i.e., a lower bound on capacity, is derived for a wideband system with a large number of channel taps that employ low-complexity linear channel estimation and symbol detection. Quantization results in two types of error in the symbol detection. The circularly symmetric error becomes Gaussian in massive MIMO and vanishes as the number of antennas grows. The amplitude distortion, which severely degrades the performance of OFDM, is caused by variations between symbol durations in received interference energy. As the number of channel taps grows, the amplitude distortion vanishes and OFDM has the same performance as single-carrier transmission. A main conclusion of this paper is that wideband massive MIMO systems work well with one-bit ADCs.115520Ysciescopu

Time-resolved imaging of flyer dynamics for femtosecond laser-induced backward transfer of solid polymer thin films

AbstractWe have studied the transfer regimes and dynamics of polymer flyers from laser-induced backward transfer (LIBT) via time-resolved shadowgraphy. Imaging of the flyer ejection phase of LIBT of 3.8μm and 6.4μm thick SU-8 polymer films on germanium and silicon carrier substrates was performed over a time delay range of 1.4–16.4μs after arrival of the laser pulse. The experiments were carried out with 150fs, 800nm pulses spatially shaped using a digital micromirror device, and laser fluences of up to 3.5J/cm2 while images were recorded via a CCD camera and a spark discharge lamp. Velocities of flyers found in the range of 6–20m/s, and the intact and fragmented ejection regimes, were a function of donor thickness, carrier and laser fluence. The crater profile of the donor after transfer and the resulting flyer profile indicated different flyer ejection modes for Si carriers and high fluences. The results contribute to better understanding of the LIBT process, and help to determine experimental parameters for successful LIBT of intact deposits

Multi-shot laser ablation and digital micromirror device mask translation for sub-diffraction-limit machining resolution

Digital Micromirror Devices (DMDs) can offer rapidly generated, bespoke intensity modulation masks for image-projection-based laser-machining. Recent work has shown repeatable sub-micron feature patterning [1], with proposed applications in the medical sciences and photonics. While DMDs can offer rapid patterning, with ~32kHz switching speeds available [2], they are not yet efficient reflectors at <300nm, thus limiting machining resolution to the diffraction limit at the near-visible wavelengths and above

Femtosecond laser-induced patterned transfer of intact semiconductor and polymer thin films via a digital micromirror device

The laser-induced forward transfer (LIFT) of thin films is an attractive technique to deposit materials on a size scale that can span nanometres to millimeters. During LIFT, the energy of a laser pulse is absorbed in a small volume of a thin film (donor) causing an explosive expansion which is used to propel a portion of the donor away from the carrier substrate and transfer it onto a receiver substrate as shown in Fig.1(a). Ultrashort laser systems can limit laser damage to remaining areas of the donor usually present using laser systems with longer (nanosecond) pulse widths

Simultaneous patterning and deposition of thin films via femtosecond laser-induced transfer using a digital micromirror device for spatial pulse shaping

The forward and backward femtosecond laser-induced transfer of thin films in an intact state with good adhesion, via a digital micromirror array acting as a dynamic object mask for spatial beam shaping is presented