The Influence of Different Nonsteroidal Anti-Inflammatory Drugs on Alveolar Bone in Rats: An Experimental Study

Svrha ovog istraživanja bila je proučiti učinak deksketoprofen-trometamola, meloksikama i natrijeva diklofenaka na netretiranu alveolarnu kost kada se koriste lijekovi za neku drugu indikaciju. Materijali i metode: Dvadeset osam mužjaka štakora Spraque-Dawley randomizirano je u četiri grupe na sličan način: tretirani su deksketoprofen-trometamolom (grupa 1.), meloksikamom (grupa 2.) i natrijevim diklofenakom (grupa 3.), a u kontrolnoj grupi nije se primjenjivao nikakav lijek. Nesteroidne protuupalne lijekove (NSAID) dobivali su deset dana nakon frakture fibule. Netretiranoj alveolarnoj kosti histopatološki se procjenjivala gustoća spongiozne kosti te osteoklastična i osteoblastična gustoća. Rezultati: Gustoća spongiozne kosti bila je niža u eksperimentalnim grupama (grupe od 1 do 3) negoli u kontrolnoj (p < 0,05). Suprotno tome, u eksperimentalnim grupama uočeno je povećanje gustoće osteoklasta u odnosu prema kontrolnoj grupi (p < 0,05). Prema gustoći osteoblasta grupe 2 i 3 bile su niže od kontrolne (p < 0,05), ali je u grupi 1 gustoća bila ista kao i u kontrolnoj. Zaključak: Ovo istraživanje pokazalo je da sustavno korištenje NSAID-a može utjecati na netretiranu alveolarnu kost. To se treba uzeti u obzir u slučaju produljenog korištenja tih lijekova.The aim: The aim of this study was to investigate the effect of dexketoprofen trometamol, meloxicam, diclofenac sodium on any untreated alveolar bone when they are used as drugs for another indication. Materials and Methods: Twenty eight male Spraque-Dawley rats were randomized into four groups as dexketoprofen trometamol (Group I), meloxicam (Group II), diclofenac sodium (Group III) and control group. Nonsteroidal anti-inflammatory drugs (NSAID) were administered after a fibula fracture for 10 days. Untreated alveolar bone was histopathologically examined for spongious bone density, osteoclastic density and osteoblastic density. Results: Spongious bone density was lower in study groups (Group I, group II and group III) than the control group (p<0.05). In contrast, the increase in osteoclastic density was observed in other groups apart from the control group (p<0.05). Osteoblastic density was evaluated and it was determined that group II and group III had lower results than the control group (p<0.05) but group I was equal to the control group. Conclusion: This study showed that systemically administrated NSAIDs have the potential to affect untreated alveolar bone. This should also be considered in long term use of NSAIDs

Correlation between deep-level defects and functional properties of β-(SnxGa1-x)2O3 on Si photodetectors

Heterogeneous integration of β-(SnxGa1-x)2O3 (TGO) UV-C photodetectors on silicon substrates by molecular beam epitaxy is demonstrated. Multimodal electron microscopy and spectroscopy techniques reveal a direct correlation between structural, compositional and optical properties of the TGO and the functional properties of the photodetectors. Wavelength dispersive X-ray spectroscopy results accurately determine the Sn concentrations (x) in the region of 0.020, and room temperature cathodoluminescence (CL) hyperspectral imaging shows changes in CL emission intensity in the TGO compared with a Ga2O3 sample with no Sn. Alloying Ga2O3 with Sn is shown to quench the red emission and enhance the blue emission. The increase in blue emission corresponds to the rise in VGa-related deep acceptors responsible for the high gain observed in the TGO detectors. A Ga2O3 nucleation layer is shown to improve the TGO surface quality and give better device properties compared to TGO grown directly onto the Si substrate, including a higher specific detectivity on the order of 1012 Jones

Tin gallium oxide epilayers on different substrates: optical and compositional analysis

Electron beam techniques have been used to analyze the impact of substrate choice and growth parameters on the compositional and optical properties of tin gallium oxide [(Sn x Ga1−x)2O3] thin films grown by plasma‐assisted molecular beam epitaxy. Sn incorporation and film quality are found to be highly dependent on growth temperature and substrate material (silicon, sapphire, and bulk Ga2O3) with alloy concentrations varying up to an x value of 0.11. Room temperature cathodoluminescence spectra show the Sn alloying suppressing UV (3.3–3.0 eV), enhancing blue (2.8–2.4 eV), and generating green (2.4–2.0 eV) emission, indicative of the introduction of a high density of gallium vacancies (VGa) and subsequent VGa–Sn complexes. This behavior was further analyzed by mapping composition and luminescence across a cross section. Compared to Ga2O3, the spectral bands show a clear redshift due to bandgap reduction, confirmed by optical transmission measurements. The results show promise that the bandgap of gallium oxide can successfully be reduced through Sn alloying and used for bandgap engineering within UV optoelectronic devices

Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE

We report ultra-high responsivity of epitaxial (SnxGa1-x)2O3 (TGO) Schottky UV-C photodetectors and experimentally identified the source of gain as deep-level defects, supported by first principles calculations. Epitaxial TGO films were grown by plasma-assisted molecular beam epitaxy on (-201) oriented n-type β-Ga2O3 substrates. Fabricated vertical Schottky devices exhibited peak responsivities as high as 3.5×104 A/W at -5V applied bias under 250nm illumination with sharp cutoff shorter than 280nm and fast rise/fall time in milliseconds order. Hyperspectral imaging cathodoluminescence (CL) spectra were examined to find the mid-bandgap defects, the source of this high gain. Irrespective of different tin mole fractions, the TGO epilayer exhibited extra CL peaks at the green band (2.20 eV) not seen in β-Ga2O3 along with enhancement of the blue emission-band (2.64 eV) and suppression of the UV emission-band. Based on hybrid functional calculations of the optical emission expected for defects involving Sn in β-Ga2O3, VGa–Sn complexes are proposed as potential defect origins of the observed green and blue emission-bands. Such complexes behave as acceptors that can efficiently trap photogenerated holes and are predicted to be predominantly responsible for the ultra-high photoconductive gain in the Sn-alloyed Ga2O3 devices by means of thermionic emission and electron tunneling. Regenerating the VGa–Sn defect complexes by optimizing the growth techniques, we have demonstrated a planar Schottky UV-C photodetector of the highest peak responsivity

Ultraviolet Solar Blind Ga2O3-Based Photodetectors

Detection within the deep ultraviolet (DUV) region (˜200-280 nm) offers unique fundamental advantages to probe certain optical traces. Therefore, many applications have emerged including flame and missile detection, and non-line of sight and space-to-space communication. Ga2O3 has become a natural choice for DUV detection owing to its intrinsic ultra-wide optical bandgap (˜4.85 eV), extrinsic n-type dopability, and excellent chemical and physical stability. However, Ga2O3 has no viable p-type doping to date, and fabricated photodetectors show only partial coverage of the entire solar-blind region (˜200-245nm). Furthermore, there is a limited understanding of how various growth parameters for ß-Ga2O3 and its alloys impact the material properties (i.e. defects), and how these ultimately play a role in functional device characteristics. This dissertation aims to address the aforementioned challenges with systematic studies spanning across epitaxial growth by molecular beam epitaxy (MBE), device fabrication, and characterization, leading to a comprehensive understanding of how these impact the optical, structural, compositional, and device properties. The experiments start with homoepitaxial and heteroepitaxial growth of Ga2O3 on bulk n-Ga2O3, sapphire, and advance to the growth on Si by MBE for monolithic integration. A novel nucleation technique of Ga2O3 on n-Si substrate allowed achieving one of the fastest functional DUV photodetectors with high responsivities. Furthermore, bandgap engineering via alloying Ga2O3 with In and Sn improved the DUV coverage, extending the cut-off wavelength beyond ˜245 nm, while benefitting higher responsivities. A record-setting photoresponsivity (˜35 kA/W) among planar devices was achieved with Sn alloying. The mechanisms leading to the unusually high photoconductive gains in these devices were investigated to determine the root cause. Point defects, particularly gallium vacancy-related complexes, are identified as the most likely source of ultra-high gains by hole-trapping at space-charge-region of Schottky barrier photodetectors. Moreover, a direct trade-off between bandwidth and responsivity was observed due to these complexes

International Nosocomial Infection Control Consortium report, data summary of 50 countries for 2010-2015: Device-associated module

•We report INICC device-associated module data of 50 countries from 2010-2015.•We collected prospective data from 861,284 patients in 703 ICUs for 3,506,562 days.•DA-HAI rates and bacterial resistance were higher in the INICC ICUs than in CDC-NHSN's.•Device utilization ratio in the INICC ICUs was similar to CDC-NHSN's. Background: We report the results of International Nosocomial Infection Control Consortium (INICC) surveillance study from January 2010-December 2015 in 703 intensive care units (ICUs) in Latin America, Europe, Eastern Mediterranean, Southeast Asia, and Western Pacific. Methods: During the 6-year study period, using Centers for Disease Control and Prevention National Healthcare Safety Network (CDC-NHSN) definitions for device-associated health care-associated infection (DA-HAI), we collected prospective data from 861,284 patients hospitalized in INICC hospital ICUs for an aggregate of 3,506,562 days. Results: Although device use in INICC ICUs was similar to that reported from CDC-NHSN ICUs, DA-HAI rates were higher in the INICC ICUs: in the INICC medical-surgical ICUs, the pooled rate of central line-associated bloodstream infection, 4.1 per 1,000 central line-days, was nearly 5-fold higher than the 0.8 per 1,000 central line-days reported from comparable US ICUs, the overall rate of ventilator-associated pneumonia was also higher, 13.1 versus 0.9 per 1,000 ventilator-days, as was the rate of catheter-associated urinary tract infection, 5.07 versus 1.7 per 1,000 catheter-days. From blood cultures samples, frequencies of resistance of Pseudomonas isolates to amikacin (29.87% vs 10%) and to imipenem (44.3% vs 26.1%), and of Klebsiella pneumoniae isolates to ceftazidime (73.2% vs 28.8%) and to imipenem (43.27% vs 12.8%) were also higher in the INICC ICUs compared with CDC-NHSN ICUs. Conclusions: Although DA-HAIs in INICC ICU patients continue to be higher than the rates reported in CDC-NSHN ICUs representing the developed world, we have observed a significant trend toward the reduction of DA-HAI rates in INICC ICUs as shown in each international report. It is INICC's main goal to continue facilitating education, training, and basic and cost-effective tools and resources, such as standardized forms and an online platform, to tackle this problem effectively and systematically