Development of an empirically based dynamic biomechanical strength model

The focus here is on the development of a dynamic strength model for humans. Our model is based on empirical data. The shoulder, elbow, and wrist joints are characterized in terms of maximum isolated torque, position, and velocity in all rotational planes. This information is reduced by a least squares regression technique into a table of single variable second degree polynomial equations determining the torque as a function of position and velocity. The isolated joint torque equations are then used to compute forces resulting from a composite motion, which in this case is a ratchet wrench push and pull operation. What is presented here is a comparison of the computed or predicted results of the model with the actual measured values for the composite motion

Low threshold InGaAsP/InP lasers with microcleaved mirrors suitable for monolithic integration

Low threshold InGaAsP/InP injection lasers on semi-insulating InP substrates have been developed with mirrors fabricated by the microcleavage technique. Miniature suspended bridges containing the laser channels have been formed and then microcleavage has been accomplished by the use of ultrasonic vibrations. Lasers with current thresholds as low as 18 mA with 140-µm cavity length and with 35–45% differential quantum efficiency have been obtained

Mode stabilized terrace InGaAsP lasers on semi-insulating InP

Mode stabilized terrace InGaAsP lasers have been fabricated on semi-insulating InP substrates. The fabrication involves a selective, single-step liquid phase epitaxial growth process, and a lateral Zn diffusion. Two versions of the terrace lasers are fabricated, and threshold currents as low as 35 mA and 50 mA respectively are obtained. The lasers operate with a stable single lateral mode. High power performance is observed. These lasers are suitable for monolithic integration with other optoelectronic devices

Phase-locked InGaAsP laser array with diffraction coupling

A phase-locked array of InGaAsP lasers has been fabricated for the first time. This 50-µm-wide array utilized diffraction coupling between adjacent lasers to achieve phase locking. Threshold current as low as 200 mA is obtained for arrays with 250-µm cavity length. Smooth single-lobe far-field patterns with beam divergence as narrow as 3° have been achieved

A Bayesian test for the appropriateness of a model in the biomagnetic inverse problem

This paper extends the work of Clarke [1] on the Bayesian foundations of the biomagnetic inverse problem. It derives expressions for the expectation and variance of the a posteriori source current probability distribution given a prior source current probability distribution, a source space weight function and a data set. The calculation of the variance enables the construction of a Bayesian test for the appropriateness of any source model that is chosen as the a priori infomation. The test is illustrated using both simulated (multi-dipole) data and the results of a study of early latency processing of images of human faces. [1] C.J.S. Clarke. Error estimates in the biomagnetic inverse problem. Inverse Problems, 10:77--86, 1994.Comment: 13 pages, 16 figures. Submitted to Inverse Problem

Direct measurement of the carrier leakage in an InGaAsP/InP laser

Carrier leakage over the heterobarrier in an InGaAsP/InP laser is measured directly in a laser-bipolar-transistor structure. Experimental results indicate a significant amount of carrier leakage under normal laser operating conditions

Low threshold InGaAsP terrace mass transport laser on semi-insulating substrate

Very low threshold InGaAsP terrace lasers on semi-insulating (SI) InP substrate have been fabricated using the mass transport technique. The fabrication process involves a single-step liquid phase epitaxial (LPE) growth followed by a mass transport of InP at ~675 °C in the presence of an InP cover wafer. Lasers operating in the fundamental transverse mode with smooth far-field patterns and threshold currents as low as 9.5 mA have been obtained

Very low threshold InGaAsP mesa laser

Very low threshold currents InGaAsP/InP terrace mesa (T-ME) lasers with an unpassivated surface have been fabricated on semi-insulating (SI) InP substrates. Fabrication of the lasers involves a single-step liquid phase epitaxial (LPE) growth and a simple etching process. Lasers operating in the fundamental transverse mode with threshold currents as low as 6.3 mA (for a cavity length of 250 μm) have been obtained. Comparison between the unpassivated lasers and those passivated using the mass transport technique is described