Theory of the Bloch Oscillating Transistor

The Bloch oscillating transistor (BOT) is a device, where single electron current through a normal tunnel junction can be used to enhance Cooper pair current in a mesoscopic Josephson junction leading to signal amplification. In this paper we develop a theory, where the BOT dynamics is described as a two-level system. The theory is used to predict current-voltage characteristics and small-signal response. Transition from stable operation into hysteretic regime is studied. By identifying the two-level switching noise as the main source of fluctuations, the expressions for equivalent noise sources and the noise temperature are derived. The validity of the model is tested by comparing the results with simulations.Comment: 11 pages, 8 figure

Description of self-synchronization effects in distributed Josephson junction arrays using harmonic analysis and power balance

Power generation and synchronisation in Josephson junction arrays have attracted attention for a long time. This stems from fundamental interest in nonlinear coupled systems as well as from potential in practical applications. In this paper we study the case of an array of junctions coupled to a distributed transmission line either driven by an external microwave or in a self-oscillating mode. We simplify the theoretical treatment in terms of harmonic analysis and power balance. We apply the model to explain the large operation margins of SNS- and SINIS-junction arrays. We show the validity of the approach by comparing with experiments and simulations with self-oscillating es-SIS junction arrays.Comment: 5 pages, 3 figure

Control of Coulomb blockade in a mesoscopic Josephson junction using single electron tunneling

We study a circuit where a mesoscopic Josephson junction (JJ) is embedded in an environment consisting of a large bias resistor and a normal metal - superconductor tunnel junction (NIS). The effective Coulomb blockade of the JJ can be controlled by the tunneling current through the NIS junction leading to transistor-like characteristics. We show using phase correlation theory and numerical simulations that substantial current gain with low current noise ($i_{n}\lesssim 1$ fA/$\sqrt{\text{Hz}}$) and noise temperature ($\lesssim$ 0.1 K) can be achieved. Good agreement between our numerical simulations and experimental results is obtained.Comment: 5 pages, 4 figures, RevTE

Electronic properties of ion-implanted yttria-stabilized zirconia

Ion implantation of iron and titanium has been applied to modify the surface properties of polycrystalline yttria-stabilized zirconia ((ZrO2)0.87(YO1.5)0.13 (YSZ)) discs in an attempt to prepare surfaces with a mixed conductivity and by this an enhanced surface oxygen exchange kinetics. Surface-sensitive spectroscopic techniques were applied to investigate the implanted layers as a function of different pretreatments such as oxidation, reduction and annealing. Depth profiles were recorded by Rutherford Backscattering Spectroscopy (RBS) and X-ray Photoelectron Spectroscopy (XPS) in combination with sputtering. Ion Scattering Spectroscopy (ISS) and XPS were used to investigate the surface composition and valency of implanted ions. Electronic properties like the band gap, the work function and the energy difference between the Fermi level and valence band edge (EF-EV) were obtained from Ultraviolet Photoelectron Spectroscopy (UPS) and Electron Energy Loss Spectroscopy (EELS). Overlayers of Fe2O3 or TiO2 are formed during oxidation of as-implanted samples. The Fe- and Ti-oxides could be reduced in hydrogen to the oxidation states Fe2+, Fe0 or Ti3+. Annealing of the samples leads to decreased surface concentrations of the implanted ions due to in-diffusion. At the surface of the annealed iron-implanted samples, Fe2+ and metallic Fe could be generated after further reduction whereas at the surface of the annealed Ti-implanted samples only Ti4+ was detectable.\u

RSFQ devices with selective dissipation for quantum information processing

We study the possibility to use frequency dependent damping in RSFQ circuits as means to reduce dissipation and consequent decoherence in RSFQ/qubit circuits. We show that stable RSFQ operation can be achieved by shunting the Josephson junctions with an $RC$ circuit instead of a plain resistor. We derive criteria for the stability of such an arrangement, and discuss the effect on decoherence and the optimisation issues. We also design a simple flux generator aimed at manipulating flux qubits