754 research outputs found
Few layer graphene on SiC, pyrolitic graphite and graphene: a Raman scattering study
The results of micro-Raman scattering measurements performed on three
different ``graphitic'' materials: micro-structured disks of highly oriented
pyrolytic graphite, graphene multi-layers thermally decomposed from carbon
terminated surface of 4H-SiC and an exfoliated graphene monolayer are
presented. Despite its multi-layer character, most parts of the surface of the
graphitized SiC substrates shows a single-component, Lorentzian shape, double
resonance Raman feature in striking similarity to the case of a single graphene
monolayer. Our observation suggests a very weak electronic coupling between
graphitic layers on the SiC surface, which therefore can be considered to be
graphene multi-layers with a simple (Dirac-like) band structure.Comment: 4 pages, 3 Figures Structure of the paper strongly modified, small
changes in Fig 2 and 3. Same interpretation and same result
Directed self-organization of graphene nanoribbons on SiC
Realization of post-CMOS graphene electronics requires production of
semiconducting graphene, which has been a labor-intensive process. We present
tailoring of silicon carbide crystals via conventional photolithography and
microelectronics processing to enable templated graphene growth on
4H-SiC{1-10n} (n = 8) crystal facets rather than the customary {0001} planes.
This allows self-organized growth of graphene nanoribbons with dimensions
defined by those of the facet. Preferential growth is confirmed by Raman
spectroscopy and high-resolution transmission electron microscopy (HRTEM)
measurements, and electrical characterization of prototypic graphene devices is
presented. Fabrication of > 10,000 top-gated graphene transistors on a 0.24 cm2
SiC chip demonstrates scalability of this process and represents the highest
density of graphene devices reported to date.Comment: 13 pages, 5 figure
The Computational Complexity of Knot and Link Problems
We consider the problem of deciding whether a polygonal knot in 3-dimensional
Euclidean space is unknotted, capable of being continuously deformed without
self-intersection so that it lies in a plane. We show that this problem, {\sc
unknotting problem} is in {\bf NP}. We also consider the problem, {\sc
unknotting problem} of determining whether two or more such polygons can be
split, or continuously deformed without self-intersection so that they occupy
both sides of a plane without intersecting it. We show that it also is in NP.
Finally, we show that the problem of determining the genus of a polygonal knot
(a generalization of the problem of determining whether it is unknotted) is in
{\bf PSPACE}. We also give exponential worst-case running time bounds for
deterministic algorithms to solve each of these problems. These algorithms are
based on the use of normal surfaces and decision procedures due to W. Haken,
with recent extensions by W. Jaco and J. L. Tollefson.Comment: 32 pages, 1 figur
A new cross section measurement of reactions induced by 3He-particles on a carbon target
International audienceThe production of intense beams of light radioactive nuclei can be achieved at the SPIRAL2 facility using intense stable beams accelerated by the driver accelerator and impinging on light targets. The isotope 14O is identied to be of high interest for future experiments. The excitation function of the production reaction 12C(3He, n)14O was measured between 7 and 35 MeV. Results are compared with literature data. As an additional result, we report the rst cross-section measurement for the 12C(3He, +n)10C reaction. Based on this new result, the potential in-target 14O yield at SPIRAL2 was estimated: 2.4x1011 pps, for 1 mA of 3He at 35 MeV. This is a factor 140 higher than the in-target yield at SPIRAL1
The structural properties of the multi-layer graphene/4H-SiC(000-1) system as determined by Surface X-ray Diffraction
We present a structural analysis of the multi-layer graphene-4HSiC(000-1})
system using Surface X-Ray Reflectivity. We show for the first time that
graphene films grown on the C-terminated (000-1}) surface have a
graphene-substrate bond length that is very short (0.162nm). The measured
distance rules out a weak Van der Waals interaction to the substrate and
instead indicates a strong bond between the first graphene layer and the bulk
as predicted by ab-initio calculations. The measurements also indicate that
multi-layer graphene grows in a near turbostratic mode on this surface. This
result may explain the lack of a broken graphene symmetry inferred from
conduction measurements on this system [C. Berger et al., Science 312, 1191
(2006)].Comment: 9 pages with 6 figure
Andreev Reflection and Spin Injection into and wave Superconductors
We study the effect of spin injection into and wave superconductors,
with an emphasis on the interplay between boundary and bulk spin transport
properties. The quantities of interest include the amount of non-equilibrium
magnetization (), as well as the induced spin-dependent current () and
boundary voltage (). In general, the Andreev reflection makes each of the
three quantities depend on a different combination of the boundary and bulk
contributions. The situation simplifies either for half-metallic ferromagnets
or in the strong barrier limit, where both and depend solely on the
bulk spin transport/relaxation properties. The implications of our results for
the on-going spin injection experiments in high cuprates are discussed.Comment: 4 pages, REVTEX, 1 figure included; typos correcte
Localization of Dirac electrons by Moire patterns in graphene bilayers
We study the electronic structure of two Dirac electron gazes coupled by a
periodic Hamiltonian such as it appears in rotated graphene bilayers. Ab initio
and tight-binding approaches are combined and show that the spatially periodic
coupling between the two Dirac electron gazes can renormalize strongly their
velocity. We investigate in particular small angles of rotation and show that
the velocity tends to zero in this limit. The localization is confirmed by an
analysis of the eigenstates which are localized essentially in the AA zones of
the Moire patterns.Comment: 4 pages, 5 figure
- …