Few layer graphene on SiC, pyrolitic graphite and graphene: a Raman scattering study

The results of micro-Raman scattering measurements performed on three different ``graphitic'' materials: micro-structured disks of highly oriented pyrolytic graphite, graphene multi-layers thermally decomposed from carbon terminated surface of 4H-SiC and an exfoliated graphene monolayer are presented. Despite its multi-layer character, most parts of the surface of the graphitized SiC substrates shows a single-component, Lorentzian shape, double resonance Raman feature in striking similarity to the case of a single graphene monolayer. Our observation suggests a very weak electronic coupling between graphitic layers on the SiC surface, which therefore can be considered to be graphene multi-layers with a simple (Dirac-like) band structure.Comment: 4 pages, 3 Figures Structure of the paper strongly modified, small changes in Fig 2 and 3. Same interpretation and same result

Directed self-organization of graphene nanoribbons on SiC

Realization of post-CMOS graphene electronics requires production of semiconducting graphene, which has been a labor-intensive process. We present tailoring of silicon carbide crystals via conventional photolithography and microelectronics processing to enable templated graphene growth on 4H-SiC{1-10n} (n = 8) crystal facets rather than the customary {0001} planes. This allows self-organized growth of graphene nanoribbons with dimensions defined by those of the facet. Preferential growth is confirmed by Raman spectroscopy and high-resolution transmission electron microscopy (HRTEM) measurements, and electrical characterization of prototypic graphene devices is presented. Fabrication of > 10,000 top-gated graphene transistors on a 0.24 cm2 SiC chip demonstrates scalability of this process and represents the highest density of graphene devices reported to date.Comment: 13 pages, 5 figure

The Computational Complexity of Knot and Link Problems

We consider the problem of deciding whether a polygonal knot in 3-dimensional Euclidean space is unknotted, capable of being continuously deformed without self-intersection so that it lies in a plane. We show that this problem, {\sc unknotting problem} is in {\bf NP}. We also consider the problem, {\sc unknotting problem} of determining whether two or more such polygons can be split, or continuously deformed without self-intersection so that they occupy both sides of a plane without intersecting it. We show that it also is in NP. Finally, we show that the problem of determining the genus of a polygonal knot (a generalization of the problem of determining whether it is unknotted) is in {\bf PSPACE}. We also give exponential worst-case running time bounds for deterministic algorithms to solve each of these problems. These algorithms are based on the use of normal surfaces and decision procedures due to W. Haken, with recent extensions by W. Jaco and J. L. Tollefson.Comment: 32 pages, 1 figur

A new cross section measurement of reactions induced by 3He-particles on a carbon target

International audienceThe production of intense beams of light radioactive nuclei can be achieved at the SPIRAL2 facility using intense stable beams accelerated by the driver accelerator and impinging on light targets. The isotope 14O is identied to be of high interest for future experiments. The excitation function of the production reaction 12C(3He, n)14O was measured between 7 and 35 MeV. Results are compared with literature data. As an additional result, we report the rst cross-section measurement for the 12C(3He, +n)10C reaction. Based on this new result, the potential in-target 14O yield at SPIRAL2 was estimated: 2.4x1011 pps, for 1 mA of 3He at 35 MeV. This is a factor 140 higher than the in-target yield at SPIRAL1

The structural properties of the multi-layer graphene/4H-SiC(000-1) system as determined by Surface X-ray Diffraction

We present a structural analysis of the multi-layer graphene-4HSiC(000-1}) system using Surface X-Ray Reflectivity. We show for the first time that graphene films grown on the C-terminated (000-1}) surface have a graphene-substrate bond length that is very short (0.162nm). The measured distance rules out a weak Van der Waals interaction to the substrate and instead indicates a strong bond between the first graphene layer and the bulk as predicted by ab-initio calculations. The measurements also indicate that multi-layer graphene grows in a near turbostratic mode on this surface. This result may explain the lack of a broken graphene symmetry inferred from conduction measurements on this system [C. Berger et al., Science 312, 1191 (2006)].Comment: 9 pages with 6 figure

Andreev Reflection and Spin Injection into s−s- and d−d-wave Superconductors

We study the effect of spin injection into $s-$ and $d-$wave superconductors, with an emphasis on the interplay between boundary and bulk spin transport properties. The quantities of interest include the amount of non-equilibrium magnetization ($m$), as well as the induced spin-dependent current ($I_s$) and boundary voltage ($V_s$). In general, the Andreev reflection makes each of the three quantities depend on a different combination of the boundary and bulk contributions. The situation simplifies either for half-metallic ferromagnets or in the strong barrier limit, where both $V_s$ and $m$ depend solely on the bulk spin transport/relaxation properties. The implications of our results for the on-going spin injection experiments in high $T_c$ cuprates are discussed.Comment: 4 pages, REVTEX, 1 figure included; typos correcte

Localization of Dirac electrons by Moire patterns in graphene bilayers

We study the electronic structure of two Dirac electron gazes coupled by a periodic Hamiltonian such as it appears in rotated graphene bilayers. Ab initio and tight-binding approaches are combined and show that the spatially periodic coupling between the two Dirac electron gazes can renormalize strongly their velocity. We investigate in particular small angles of rotation and show that the velocity tends to zero in this limit. The localization is confirmed by an analysis of the eigenstates which are localized essentially in the AA zones of the Moire patterns.Comment: 4 pages, 5 figure