Properties of InGaAs/InP thermoelectric and surface bulk micromachined infrared sensors

We present a concept for the realization of InGaAs/InP micromachined thermoelectric sensors. The advantages of InGaAs lattice matched to InP combine perfectly for this application. The high selectivity of wet chemical etching of InP against InGaAs is ideally suited for surface bulk micromachining. Thermoelectric InGaAs sensors profit from the high thermal resistivity combined with high electrical conductivity and Seebeck effect. Thanks to the material parameters a responsivity of 257 V/W and relative detectivity of 6.4×108 cm Hz−1/2/W are expected for infrared sensors. © 1996 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70119/2/APPLAB-69-20-3039-1.pd

Проблемы информационного обеспечения физической культуры и спорта

A formation process for semiconductor quantum dots based on a surface instability induced by ion sputtering under normal incidence is presented. Crystalline dots 35 nanometers in diameter and arranged in a regular hexagonal lattice were produced on gallium antimonide surfaces. The formation mechanism relies on a natural self-organization mechanism that occurs during the erosion of surfaces, which is based on the interplay between roughening induced by ion sputtering and smoothing due to surface diffusion

Erratum: “Nonlinear optical response of GaN layers on sapphire: The impact of fundamental beam interference” [Appl. Phys. Lett. 76, 810 (2000)]

Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70473/2/APPLAB-76-11-1479-1.pd

Millimeter-Wave and Terahertz Devices Based on MEMS Concepts

The higher the frequency, the more significant are the losses. Therefore it is important even for semiconductors with relatively large energy gap to remove as much semiconducting material as possible. This leads to components and their circuits to be produced on thin semiconducting membranes where most of the substrate is etched away. It is then a relatively small step to employ mechanical motion of suitably structured devices for such properties as fine-tune phase shifting or power switching. Relevant technology details are presented. A number of active and passive components are described with their special operational behaviour

Electron emission modulation effects in microsize structures

A promising application of field-emission phenomena is microwave high-frequency oscillation generation. In this presentation, new effects at the field emission, as a perspective mechanism of high-frequency oscillation generation, has been investigated and analyzed. The mechanisms are connected with the generation of oscillations in field emission structures (i) based on the silicon or GaAs tips with ultrathin diamond-like carbon (DLC) films, (ii) III-V semiconductors (GaAs, GaN) and (iii) SiGe materials