Modeling, properties, and fabrication of a micromachined thermoelectric generator

Different electrical and thermoelectric properties of a Si-based thermoelectric generator (TEG) are described based on the Kubo–Greenwood formalism. Temperature and doping dependence, phonon scattering (acoustic and optical phonons), and scattering on impurities are included. Comparisons with experimentally verified data confirm the validity of the model. Experimental studies were carried out on a micromechanically fabricated TEG. Devices were realized using a standard CMOS SOI technology in a lateral geometry. All thermopiles are located on a thin membrane to reduce the heat flow. The thickness of the membrane was adjusted between 20 and 30 µm ensuring also sufficient mechanical stability. Measurements on individual devices confirm the results of the theoretical model. The Seebeck coefficient was calculated and experimentally measured as S = 0.5 mV/K at an acceptor level of 1019 cm−3 at room temperature. The power factor is S2 · σ = 0.0073 W/mK2

Nanoscaled Surface Patterns Influence Adhesion and Growth of Human Dermal Fibroblasts

In general, there is a need for passivation of nanopatterned biomaterial surfaces if cells are intended to interact only with a feature of interest. For this reason self-assembled monolayers (SAM), varying in chain length, are used; they are highly effective in preventing protein adsorption or cell adhesion. In addition, a simple and cost-effective technique to design nanopatterns of various sizes and distances, the so-called nanosphere lithography (NSL), is discussed, which allows the control of cell adhesion and growth depending on the feature dimensions. Combining both techniques results in highly selective nanostructured surfaces, showing that single proteins selectively adsorb on activated nanopatterns. Additionally, adhesion and growth of normal human dermal fibroblasts (NHDF) is strongly affected by the nanostructure dimensions, and it is proven that fibronectin (FN) matrix formation of these cells is influenced, too. Moreover, the FN fibrils are linked to the hexagonally close-packed nanopatterns. As a result, the system presented here can be applied in tissue engineering and implant design due to the fact that the nanopattern dimensions give rise to further modifications and allow the introduction of chemical heterogeneity to guide stem cell differentiation in the future

Modeling, properties, and fabrication of a micromachined thermoelectric generator

Different electrical and thermoelectric properties of a Si-based thermoelectric generator (TEG) are described based on the Kubo–Greenwood formalism. Temperature and doping dependence, phonon scattering (acoustic and optical phonons), and scattering on impurities are included. Comparisons with experimentally verified data confirm the validity of the model. Experimental studies were carried out on a micromechanically fabricated TEG. Devices were realized using a standard CMOS SOI technology in a lateral geometry. All thermopiles are located on a thin membrane to reduce the heat flow. The thickness of the membrane was adjusted between 20 and 30 µm ensuring also sufficient mechanical stability. Measurements on individual devices confirm the results of the theoretical model. The Seebeck coefficient was calculated and experimentally measured as S = 0.5 mV/K at an acceptor level of 1019 cm−3 at room temperature. The power factor is S2 · σ = 0.0073 W/mK2

Elastic behavior of metal-assisted etched Si/SiGe superlattice nanowires containing dislocations

We systematically investigate structural parameters, such as shape, size, elastic strain, and relaxations, of metal-assisted etched vertically modulated Si/SiGe superlattice nanowires by using electron microscopy, synchrotron-based x-ray diffraction, and numerical linear elasticity theory. A vertical Si/Ge superlattice with atomically flat interfaces is grown by using molecular beam epitaxy on Si-buffered Si(001) substrates. The lattice constants for Si and Ge are 5.43 and 5.66 Å, respectively, which indicate a lattice mismatch of 4.2%. This results in a strained layer in the boundary between Si and Ge leading to dislocations. These substrates serve as the starting material for nanostructuring the surface by using metal-assisted etching. It is shown that the high quality crystalline structure is preserved in the fabrication process, while the lattice mismatch is partially relieved by dislocation formation. Despite this highly effective relaxation path, dislocations present in the parent superlattice do not vanish upon nanostructuring for wires with diameters of down to at least 80 nm. We relate these observations to the applicability of silicon-based nanowires for high-performance thermoelectric generators

Ag-Mediated Charge Transport during Metal-Assisted Chemical Etching of Silicon Nanowires

The charge transport mechanism during metal-assisted chemical etching of Si nanowires with contiguous metal films has been investigated. The experiments give a better insight how the charges and reaction products can penetrate to the etching front. The formation of a layer of porous Si between the metal film and the bulk Si is a prerequisite for the etching process. The electronic holes (positive charges) necessary for the etching of porous Si are generated at the surface of the metal in contact with the oxidative agent. Because of the insulating character of the thin walls of the porous Si, the transport of the electronic holes through this layer is not possible. Instead, it is found that the transport of electronic holes proceeds primarily by means of the Ag/Ag⁺ redox pair circulating in the electrolyte and diffusing through the etched pores in the Si. The charge transport occurs without the ionic contribution at the positions where the metal is in direct contact with the Si. Here, an electropolishing process takes place, leading to an extensive removal of the Si and sinking in of the film into the Si substrate

Model for the Mass Transport during Metal-Assisted Chemical Etching with Contiguous Metal Films As Catalysts

Metal-assisted chemical etching is a relatively new top-down approach allowing a highly controlled and precise fabrication of Si and Si/Ge superlattice nanowires. It is a simple method with the ability to tailor diverse nanowire parameters like diameter, length, density, orientation, doping level, doping type, and morphology. In a typical metal-assisted chemical etching procedure, a Si substrate is covered by a lithographic noble metal film and etched in a solution containing HF and an oxidant (typically H₂O₂). In general, the function of the metal is to catalyze the reduction of H₂O₂, which delivers electronic holes necessary for the oxidation and subsequent dissolution of the Si oxide by HF. However, the details of the etching process using contiguous metal thin films, especially the mass transport of reactants and byproducts are still not well understood. In this study, the etching mechanism was systematically investigated. Several models of metal-assisted chemical etching using a contiguous metal film as a catalyst were developed and tested by performing different well-controlled etching experiments. The experiments helped to identify two processes fundamental for the formation of Si nanowires. First, a thin porous layer is formed beneath the metal film during etching, which facilitates the transport of the electrolyte (HF and H₂O₂). Second, the porous layer is continuously etched away in an electropolishing process, which occurs in direct contact with the metal film. Our results lead to an improved understanding of the fundamentals of the metal-assisted chemical etching on a microscopic scale. It potentially paves a way to integrate lithography with metal-assisted chemical etching for fabrication of Si nanowires with adjustable surface patterns