2,701 research outputs found
Theory of Electron Spin Relaxation in n-Doped Quantum Wells
Recent experiments have demonstrated long spin lifetimes in uniformly n-doped
quantum wells. The spin dynamics of exciton, localized, and conduction spins
are important for understanding these systems. We explain experimental behavior
by invoking spin exchange between all spin species. By doing so we explain
quantitatively and qualitatively the striking and unusual temperature
dependence in (110)-GaAs quantum wells. We discuss possible future experiments
to resolve the pertinent localized spin relaxation mechanisms. In addition, our
analysis allows us to propose possible experimental scenarios that will
optimize spin relaxation times in GaAs and CdTe quantum wells.Comment: Small corrections made. Accepted to Phys. Rev. B. 8 pages, 5 figure
Anomalous organic magnetoresistance from competing carrier-spin-dependent interactions with localized electronic and nuclear spins
We describe a new regime for low-field magnetoresistance in organic
semiconductors, in which the spin-relaxing effects of localized nuclear spins
and electronic spins interfere. The regime is studied by the controlled
addition of localized electronic spins to a material that exhibits substantial
room-temperature magnetoresistance (\%). Although initially the
magnetoresistance is suppressed by the doping, at intermediate doping there is
a regime where the magnetoresistance is insensitive to the doping level. For
much greater doping concentrations the magnetoresistance is fully suppressed.
The behavior is described within a theoretical model describing the effect of
carrier spin dynamics on the current
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