Metal-Insulator Transition and Spin Degree of Freedom in Silicon 2D Electron Systems

Magnetotransport in 2DES's formed in Si-MOSFET's and Si/SiGe quantum wells at low temperatures is reported. Metallic temperature dependence of resistivity is observed for the n-Si/SiGe sample even in a parallel magnetic field of 9T, where the spins of electrons are expected to be polarized completely. Correlation between the spin polarization and minima in the diagonal resistivity observed by rotating the samples for various total strength of the magnetic field is also investigated.Comment: 3 pages, RevTeX, 4 eps-figures, conference paper (EP2DS-13

Novel Properties of The Apparent Metal-Insulator Transition in Two-Dimensional Systems

The low-temperature conductivity of low-density, high-mobility, two-dimensional hole systems in GaAs was studied. We explicitly show that the metal-insulator transition, observed in these systems, is characterized by a well-defined critical density, p_0c. We also observe that the low-temperature conductivity of these systems depends linearly on the hole density, over a wide density range. The high-density linear conductivity extrapolates to zero at a density close to the critical density.Comment: 4 Figure

Spin polarization of strongly interacting 2D electrons: the role of disorder

In high-mobility silicon MOSFET's, the $g^*m^*$ inferred indirectly from magnetoconductance and magnetoresistance measurements with the assumption that $g^*\mu_BH_s=2E_F$ are in surprisingly good agreement with $g^*m^*$ obtained by direct measurement of Shubnikov-de Haas oscillations. The enhanced susceptibility $\chi^* \propto (g^*m^*)$ exhibits critical behavior of the form $\chi^* \propto (n - n_0)^{-\alpha}$. We examine the significance of the field scale $H_s$ derived from transport measurements, and show that this field signals the onset of full spin polarization only in the absence of disorder. Our results suggest that disorder becomes increasingly important as the electron density is reduced toward the transition.Comment: 4 pages, 3 figure

Alite calcium sulfoaluminate cement: chemistry and thermodynamics

Calcium sulfoaluminate (C$A) cement is a binder of increasing interest to the cement industry and is undergoing rapid development. Current formulations do not contain alite; however, alite calcium sulfoaluminate (a-C$A) cements can combine the favourable characteristics of Portland cement (PC) with those of C$A cement while also having a lower carbon dioxide footprint than the current generation of PC clinkers. This paper presents two results on the formation of a-C$A clinkers. The first is a thermodynamic study demonstrating that the production of a-C$A clinker is possible without the use of mineralisers, doping with foreign elements, or using multiple stages of heating. It is established that a-C$A clinker can be readily produced in a standard process by controlling the oxygen and sulfur dioxide fugacity in the atmosphere. This allows for the stabilisation of ye’elimite to the higher temperatures required for alite stability. The second result establishes that when using fluorine to mineralise a-C$A clinker production, the iron content in the clinker is also an important variable. Although the exact mechanism of alite stabilisation is not known, it is shown that alite formation increases with the combination of calcium fluoride and iron (III) oxide in the mix

On the sustainable development of cement

Cement is the most manufactured product on earth. Unfortunately, the manufacture of cement is accompanied by the emission of carbon dioxide gas. Among all manufacturing industry sectors in the UK, the cement industry is the largest CO2 emitter and these emissions are damaging our planet. The sustainable development of cement will allow future generations to develop without being compromised by the cement industry. This work identifies some of the routes to reducing the environmental burden of the cement industry

In-plane Magnetoconductivity of Si-MOSFET's: A Quantitative Comparison between Theory and Experiment

For densities above $n=1.6 \times 10^{11}$ cm$^{-2}$ in the strongly interacting system of electrons in two-dimensional silicon inversion layers, excellent agreement between experiment and the theory of Zala, Narozhny and Aleiner is obtained for the response of the conductivity to a magnetic field applied parallel to the plane of the electrons. However, the Fermi liquid parameter $F_0^\sigma(n)$ and the valley splitting $\Delta_V(n)$ obtained from fits to the magnetoconductivity, although providing qualitatively correct behavior (including sign), do not yield quantitative agreement with the temperature dependence of the conductivity in zero magnetic field. Our results suggest the existence of additional scattering processes not included in the theory in its present form

On the Theory of Metal-Insulator Transitions in Gated Semiconductors

It is shown that recent experiments indicating a metal-insulator transition in 2D electron systems can be interpreted in terms of a simple model, in which the resistivity is controlled by scattering at charged hole traps located in the oxide layer. The gate voltage changes the number of charged traps which results in a sharp change in the resistivity. The observed exponential temperature dependence of the resistivity in the metallic phase of the transition follows from the temperature dependence of the trap occupation number. The model naturally describes the experimentally observed scaling properties of the transition and effects of magnetic and electric fields.Comment: 4 two-column pages, 4 figures (included in the text

Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers

We calculate within the Boltzmann equation approach the charged impurity scattering limited low temperature electronic resistivity of low density $n$-type inversion layers in Si MOSFET structures. We find a rather sharp quantum to classical crossover in the transport behavior in the $0 - 5$K temperature range, with the low density, low temperature mobility showing a strikingly strong non-monotonic temperature dependence, which may qualitatively explain the recently observed anomalously strong temperature dependent resistivity in low-density, high-mobility MOSFETs.Comment: 5 pages, 2 figures, will appear in PRL (12 July, 1999

Belitic calcium sulphoaluminate (BCSA) cements and the current durability standards: what are we testing?

The service life of concrete is often estimated using parameters attained from durability tests, as corrosion in concrete under natural exposure typically takes several decades. Standardised tests, such several of those outlined in EN 12390, are performed on specimens after 28 days of curing using conditions designed to accelerate natural effects. These tests were originally created for Portland cements (PCs), which at 28 days will have their major phases mostly hydrated, and thus have a durability representative of their lifespan. However, these tests can underestimate the potential of binder systems that chemically evolve beyond 28 days, such as belitic calcium sulphoaluminate (BCSA) cements, which are often reported to underperform under these procedures. BCSAs at 28 days curing would only fully consider the hydration of ye’elimite, which reacts rapidly, whereas belite typically starts to react much later. The hydration products of belite can contribute to the further filling of pores, lowering the porosity in the binder matrix and improving durability. Therefore, this study aims to review (i) the hydration of binders across time, specifically BCSA cements, (ii) reported durability results at these times, and (iii) assess how representative any results are of a hydrated binder. Furthermore, we aim to recommend alterations to testing that result in more representative data, such as incorporating ‘equivalent hydration’ into testing regimes