Heat transfer and pressure drop in blade cooling channels with turbulence promoters

Repeated rib roughness elements have been used in advanced turbine cooling designs to enhance the internal heat transfer. Often the ribs are perpendicular to the main flow direction so that they have an angle-of-attack of 90 deg. The objective of the project was to investigate the effect of rib angle-of-attack on the pressure drop and the average heat transfer coefficients in a square duct with two opposite rib-roughned walls for Reynolds number varied from 8000 to 80,000. The rib height-to-equivalent diameter ratio (e/D) was kept at a constant value of 0.063, the rib pitch-to-height ratio (P/e) was varied from 10 to 20, and the rib angle-of-attack (alpha) was varied from 90 deg to 60 deg to 45 deg to 30 deg respectively. Two types of entrance conditions were examined, namely, long duct and sudden contraction. The heat transfer coefficient distribution on the smooth side wall and the rough side wall at the entrance and the fully developed regions were measured. Thermal performance comparison indicated that the pumping power requirement for the rib with an oblique angle to the flow (alpha = 45 deg to 30 deg) was about 20 to 50 percent lower than the rib with a 90 deg angle to the flow for a given heat transfer duty

Understanding of the Retarded Oxidation Effects in Silicon Nanostructures

In-depth understanding of the retarded oxidation phenomenon observed during the oxidation of silicon nanostructures is proposed. The wet thermal oxidation of various silicon nanostructures such as nanobeams, concave/convex nanorings and nanowires exhibits an extremely different and complex behavior. Such effects have been investigated by the modeling of the mechanical stress generated during the oxidation process explaining the retarded regime. The model describes the oxidation kinetics of silicon nanowires down to a few nanometers while predicting reasonable and physical stress levels at the Si/SiO$_{2}$ interface by correctly taking into account the relaxation effects in silicon oxide through plastic flow

Transport in Graphene Tunnel Junctions

We present a technique to fabricate tunnel junctions between graphene and Al and Cu, with a Si back gate, as well as a simple theory of tunneling between a metal and graphene. We map the differential conductance of our junctions versus probe and back gate voltage, and observe fluctuations in the conductance that are directly related to the graphene density of states. The conventional strong-suppression of the conductance at the graphene Dirac point can not be clearly demonstrated, but a more robust signature of the Dirac point is found: the inflection in the conductance map caused by the electrostatic gating of graphene by the tunnel probe. We present numerical simulations of our conductance maps, confirming the measurement results. In addition, Al causes strong n-doping of graphene, Cu causes a moderate p-doping, and in high resistance junctions, phonon resonances are observed, as in STM studies.Comment: 22 pages, 5 figure