9,616 research outputs found

    Formation of diluted III–V nitride thin films by N ion implantation

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    iluted III–Nₓ–V₁ˍₓ alloys were successfully synthesized by nitrogen implantation into GaAs,InP, and AlyGa1−yAs. In all three cases the fundamental band-gap energy for the ion beam synthesized III–Nₓ–V₁ˍₓ alloys was found to decrease with increasing N implantation dose in a manner similar to that observed in epitaxially grownGaNₓAs1−x and InNₓP₁ˍₓalloys. In GaNₓAs₁ˍₓ the highest value of x (fraction of “active” substitutional N on As sublattice) achieved was 0.006. It was observed that NAs is thermally unstable at temperatures higher than 850 °C. The highest value of x achieved in InNₓP₁ˍₓ was higher, 0.012, and the NP was found to be stable to at least 850 °C. In addition, the N activation efficiency in implantedInNₓP₁ˍₓ was at least a factor of 2 higher than that in GaNₓAs₁ˍₓ under similar processing conditions. AlyGa1−yNₓAs₁ˍₓ had not been made previously by epitaxial techniques. N implantation was successful in producing AlyGa1−yNₓAs₁ˍₓalloys. Notably, the band gap of these alloys remains direct, even above the value of y (y>0.44) where the band gap of the host material is indirect.This work was supported by the ‘‘Photovoltaic Materials Focus Area’’ in the DOE Center of Excellence for the Synthesis and Processing of Advanced Materials, Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences under U.S. Department of Energy Contract No. DE-ACO3-76SF00098. The work at UCSD was partially supported by Midwest Research Institute under subcontractor No. AAD-9-18668-7 from NREL

    MIPS: The Multiband Imaging Photometer for SIRTF

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    The Multiband Imaging Photometer for SIRTF (MIPS) is to be designed to reach as closely as possible the fundamental sensitivity and angular resolution limits for SIRTF over the 3 to 700μm spectral region. It will use high performance photoconductive detectors from 3 to 200μm with integrating JFET amplifiers. From 200 to 700μm, the MIPS will use a bolometer cooled by an adiabatic demagnetization refrigerator. Over much of its operating range, the MIPS will make possible observations at and beyond the conventional Rayleigh diffraction limit of angular resolution

    High fidelity quantum memory via dynamical decoupling: theory and experiment

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    Quantum information processing requires overcoming decoherence---the loss of "quantumness" due to the inevitable interaction between the quantum system and its environment. One approach towards a solution is quantum dynamical decoupling---a method employing strong and frequent pulses applied to the qubits. Here we report on the first experimental test of the concatenated dynamical decoupling (CDD) scheme, which invokes recursively constructed pulse sequences. Using nuclear magnetic resonance, we demonstrate a near order of magnitude improvement in the decay time of stored quantum states. In conjunction with recent results on high fidelity quantum gates using CDD, our results suggest that quantum dynamical decoupling should be used as a first layer of defense against decoherence in quantum information processing implementations, and can be a stand-alone solution in the right parameter regime.Comment: 6 pages, 3 figures. Published version. This paper was initially entitled "Quantum gates via concatenated dynamical decoupling: theory and experiment", by Jacob R. West, Daniel A. Lidar, Bryan H. Fong, Mark F. Gyure, Xinhua Peng, and Dieter Suter. That original version split into two papers: http://arxiv.org/abs/1012.3433 (theory only) and the current pape

    Actors that Unify Threads and Events

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    There is an impedance mismatch between message-passing concurrency and virtual machines, such as the JVM. VMs usually map their threads to heavyweight OS processes. Without a lightweight process abstraction, users are often forced to write parts of concurrent applications in an event-driven style which obscures control flow, and increases the burden on the programmer. In this paper we show how thread-based and event-based programming can be unified under a single actor abstraction. Using advanced abstraction mechanisms of the Scala programming language, we implemented our approach on unmodified JVMs. Our programming model integrates well with the threading model of the underlying VM

    Performance of ePix10K, a high dynamic range, gain auto-ranging pixel detector for FELs

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    ePix10K is a hybrid pixel detector developed at SLAC for demanding free-electron laser (FEL) applications, providing an ultrahigh dynamic range (245 eV to 88 MeV) through gain auto-ranging. It has three gain modes (high, medium and low) and two auto-ranging modes (high-to-low and medium-to-low). The first ePix10K cameras are built around modules consisting of a sensor flip-chip bonded to 4 ASICs, resulting in 352x384 pixels of 100 μ\mum x 100 μ\mum each. We present results from extensive testing of three ePix10K cameras with FEL beams at LCLS, resulting in a measured noise floor of 245 eV rms, or 67 e^- equivalent noise charge (ENC), and a range of 11000 photons at 8 keV. We demonstrate the linearity of the response in various gain combinations: fixed high, fixed medium, fixed low, auto-ranging high to low, and auto-ranging medium-to-low, while maintaining a low noise (well within the counting statistics), a very low cross-talk, perfect saturation response at fluxes up to 900 times the maximum range, and acquisition rates of up to 480 Hz. Finally, we present examples of high dynamic range x-ray imaging spanning more than 4 orders of magnitude dynamic range (from a single photon to 11000 photons/pixel/pulse at 8 keV). Achieving this high performance with only one auto-ranging switch leads to relatively simple calibration and reconstruction procedures. The low noise levels allow usage with long integration times at non-FEL sources. ePix10K cameras leverage the advantages of hybrid pixel detectors with high production yield and good availability, minimize development complexity through sharing the hardware, software and DAQ development with all other versions of ePix cameras, while providing an upgrade path to 5 kHz, 25 kHz and 100 kHz in three steps over the next few years, matching the LCLS-II requirements.Comment: 9 pages, 5 figure

    Electrical properties of isotopically enriched neutron-transmutation-doped ^{70} Ge:Ga near the metal-insulator transition

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    We report the low temperature carrier transport properties of a series of nominally uncompensated neutron-transmutation doped (NTD) ^{70} Ge:Ga samples very close to the critical concentration N_c for the metal-insulator transition. The concentration of the sample closest to N_c is 1.0004N_c and it is unambiguously shown that the critical conductivity exponent is 0.5. Properties of insulating samples are discussed in the context of Efros and Shklovskii's variable range hopping conduction.Comment: 8 pages using REVTeX, 8 figures, published versio

    Phase separation due to quantum mechanical correlations

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    Can phase separation be induced by strong electron correlations? We present a theorem that affirmatively answers this question in the Falicov-Kimball model away from half-filling, for any dimension. In the ground state the itinerant electrons are spatially separated from the classical particles.Comment: 4 pages, 1 figure. Note: text and figure unchanged, title was misspelle

    Double-beta decay of 130^{130}Te to the first 0+^{+} excited state of 130^{130}Xe with CUORICINO

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    The CUORICINO experiment was an array of 62 TeO2_{2} single-crystal bolometers with a total 130^{130}Te mass of 11.311.3\,kg. The experiment finished in 2008 after more than 3 years of active operating time. Searches for both 0ν0\nu and 2ν2\nu double-beta decay to the first excited 0+0^{+} state in 130^{130}Xe were performed by studying different coincidence scenarios. The analysis was based on data representing a total exposure of N(130^{130}Te)\cdott=9.5×10259.5\times10^{25}\,y. No evidence for a signal was found. The resulting lower limits on the half lives are T1/22ν(130Te130Xe)>1.3×1023T^{2\nu}_{1/2}(^{130} Te\rightarrow^{130} Xe^{*})>1.3\times10^{23}\,y (90% C.L.), and T1/20ν(130Te130Xe)>9.4×1023T^{0\nu}_{1/2}(^{130} Te\rightarrow^{130} Xe^{*})>9.4\times10^{23}\,y (90% C.L.).Comment: 6 pages, 4 figure
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