Analisis Aplikasi Akad Tabarru' Dalam Asuransi Syariah: Studi Kasus Pada AJB Bumiputera 1912 Syariah Cabang Kudus

The purpose of this research is to (1) know of products of Islamic insurance at AJB Bumiputera 1912 Syariah Cabang Kudus; (2) know how procedure and mechanism of application of akad tabarru' in Islamic insurance at AJBBumiputera 1912 Syariah Cabang Kudus; (3) analyse the application of akadtabarru' in Islamic insurance at AJB Bumiputera 1912 Syariah CabangKudus.This research including field research with qualitative approach. Dataanalysis using descriptive analysis.Result of this research indicate that (1)products at AJB Bumiputera 1912 Syariah Cabang Kudus are products withsaving system; individual insurance (Mitra Sakinah, Mitra Mabrur and MitraIqra') and group insurance; (2) in executing daily activity of AJB Bumiputera1912 Syariah Cabang Kudus, premium which step into the company groupedto become the Tabarru' (benefaction fund), Premium of Saving and Premiumof Cost; (3) application of Akad tabarru' at AJB Bumiputera 1912 SyariahCabang Kudus as according to religious advices of Dewan Syariah Nasional Majelis Ulama Indonesia (DSN-MUI) No. 21/DSN-MUI/X/2001 about common guidance of islamic insurance expressed that akad tabarru' is all form akad done with benefaction purpose and help mutually, not for the commercial purpos

Modeling of direct tunneling gate current and gate capacitance in deep submicron MOSFETs with high-K dielectric.

Scaling down of MOS device dimensions is accompanied by a decrease in gate-oxide thickness and an increase in substrate doping density. When gate oxide thickness becomes less than 2 nm, a substantial current follows through gate-oxide due to direct tunneling. In order to reduce this current, International Technology Roadmap for Semiconductors (ITRS) has suggested replacement of SiO2 gate insulator layer by high-K dielectrics. For a given equivalent oxide thickness (EOT), high-K dielectrics offer greater physical thickness. The direct tunneling (DT) current and the gate capacitance for an inverted n-MOS device with different dielectrics used as gate insulator is studied. Coupled Schrodinger’s and Poisson’s equations are solved self-consistently. Open boundary conditions, taking account the wavefunction tail inside the gate dielectric within the self-consistent loop are used to solve Schrodinger’s equation. DT current increases exponentially with the decrease of conduction band offset for electrons travelling from silicon substrate to dielectric. As general trend of dielectrics is to decrease of conduction band offset with the increase of dielectric constant, use of high-K material as gate insulator results in prominent influence of direct tunneling of carriers on potential profile. Therefore in DT current calculation effect of wavefunction penetration on potential profile is incorporated within self-consistent loop. Results of this simulation is compared with published experimental results and also with the results of the simulation where penetration effect on potential profile is neglected. Results show that neglect of wavefunction penetration effect on potential profile causes underestimation of DT current. A comprehensive analysis of the effect of wavefunction penetration on the gate capacitance of the MOSFETs with high-K dielectrics is also done. Gate capacitance from conventional modeling is found to be independent of dielectric materials for a given EOT. The study reveals that accounting for wavefunction penetration into the gate dielectric causes gate capacitance to vary from material to material for a given EOT. Consequently wavefunction penetration effects must be considered to determine properties of future generation devices where high-K dielectrics will be employed as gate insulator

Surrogate Assisted Optimisation for Travelling Thief Problems

The travelling thief problem (TTP) is a multi-component optimisation problem involving two interdependent NP-hard components: the travelling salesman problem (TSP) and the knapsack problem (KP). Recent state-of-the-art TTP solvers modify the underlying TSP and KP solutions in an iterative and interleaved fashion. The TSP solution (cyclic tour) is typically changed in a deterministic way, while changes to the KP solution typically involve a random search, effectively resulting in a quasi-meandering exploration of the TTP solution space. Once a plateau is reached, the iterative search of the TTP solution space is restarted by using a new initial TSP tour. We propose to make the search more efficient through an adaptive surrogate model (based on a customised form of Support Vector Regression) that learns the characteristics of initial TSP tours that lead to good TTP solutions. The model is used to filter out non-promising initial TSP tours, in effect reducing the amount of time spent to find a good TTP solution. Experiments on a broad range of benchmark TTP instances indicate that the proposed approach filters out a considerable number of non-promising initial tours, at the cost of omitting only a small number of the best TTP solutions

Size dependent magnetic and electrical properties of Ba-doped nanocrystalline BiFeO3_3

Improvement in magnetic and electrical properties of multiferroic BiFeO$_3$ in conjunction with their dependence on particle size is crucial due to its potential applications in multifunctional miniaturized devices. In this investigation, we report a study on particle size dependent structural, magnetic and electrical properties of sol-gel derived Bi$_{0.9}$Ba$_{0.1}$FeO$_3$ nanoparticles of different sizes ranging from $\sim$ 12 to 49 nm. The substitution of Bi by Ba significantly suppresses oxygen vacancies, reduces leakage current density and Fe$^{2+}$ state. An improvement in both magnetic and electrical properties is observed for 10 % Ba-doped BiFeO$_3$ nanoparticles compared to its undoped counterpart. The saturation magnetization of Bi$_{0.9}$Ba$_{0.1}$FeO$_3$ nanoparticles increase with reducing particle size in contrast with a decreasing trend of ferroelectric polarization. Moreover, a first order metamagnetic transition is noticed for $\sim$ 49 nm Bi$_{0.9}$Ba$_{0.1}$FeO$_3$ nanoparticles which disappeared with decreasing particle size. The observed strong size dependent multiferroic properties are attributed to the complex interaction between vacancy induced crystallographic defects, multiple valence states of Fe, uncompensated surface spins, crystallographic distortion and suppression of spiral spin cycloid of BiFeO$_3$.Comment:

Depletion-Isolation Effect in Vertical MOSFETs During the Transition From Partial to Fully Depleted Operation

A simulation study is made of floating-body effects (FBEs) in vertical MOSFETs due to depletion isolation as the pillar thickness is reduced from 200 to 10 nm. For pillar thicknesses between 200–60 nm, the output characteristics with and without impact ionization are identical at a low drain bias and then diverge at a high drain bias. The critical drain bias Vdc for which the increased drain–current is observed is found to decrease with a reduction in pillar thickness. This is explained by the onset of FBEs at progressively lower values of the drain bias due to the merging of the drain depletion regions at the bottom of the pillar (depletion isolation). For pillar thicknesses between 60–10 nm, the output characteristics show the opposite behavior, namely, the critical drain bias increases with a reduction in pillar thickness. This is explained by a reduction in the severity of the FBEs due to the drain debiasing effect caused by the elevated body potential. Both depletion isolation and gate–gate coupling contribute to the drain–current for pillar thicknesses between 100–40 nm