Depletion isolation effect in Vertical MOSFETS during transition from partial to fully depleted operation

A simulation study is made of floating-body effects (FBEs) in vertical MOSFETs due to depletion isolation as the pillar thickness is reduced from 200 to 10 nm. For pillar thicknesses between 200–60 nm, the output characteristics with and without impact ionization are identical at a low drain bias and then diverge at a high drain bias. The critical drain bias Vdc for which the increased drain–current is observed is found to decrease with a reduction in pillar thickness. This is explained by the onset of FBEs at progressively lower values of the drain bias due to the merging of the drain depletion regions at the bottom of the pillar (depletion isolation). For pillar thicknesses between 60–10 nm, the output characteristics show the opposite behavior, namely, the critical drain bias increases with a reduction in pillar thickness. This is explained by a reduction in the severity of the FBEs due to the drain debiasing effect caused by the elevated body potential. Both depletion isolation and gate–gate coupling contribute to the drain–current for pillar thicknesses between 100–40 nm

Aging effects in the quantum dynamics of a dissipative free particle: non-ohmic case

We report new results related to the two-time dynamics of the coordinate of a quantum free particle, damped through its interaction with a fractal thermal bath (non-ohmic coupling $\sim\omega^\delta$ with $0<\delta<1$ or $1<\delta<2)$. When the particle is localized, its position does not age. When it undergoes anomalous diffusion, only its displacement may be defined. It is shown to be an aging variable. The finite temperature aging regime is self-similar. It is described by a scaling function of the ratio ${t_w/\tau}$ of the waiting time to the observation time, as characterized by an exponent directly linked to $\delta$.Comment: 4 pages, 3 figures, submitted to PR

Distribution of repetitions of ancestors in genealogical trees

We calculate the probability distribution of repetitions of ancestors in a genealogical tree for simple neutral models of a closed population with sexual reproduction and non-overlapping generations. Each ancestor at generation g in the past has a weight w which is (up to a normalization) the number of times this ancestor appears in the genealogical tree of an individual at present. The distribution P_g(w) of these weights reaches a stationary shape P_\infty(w) for large g, i.e. for a large number of generations back in the past. For small w, P_\infty(w) is a power law with a non-trivial exponent which can be computed exactly using a standard procedure of the renormalization group approach. Some extensions of the model are discussed and the effect of these variants on the shape of P_\infty(w) are analysed.Comment: 20 pages, 5 figures included, to appear in Physica

Kalimat Majemuk Setara dalam Novel Rumah Seribu Malaikat Karya Yuli Badawi dan Hermawan Aksan

Research is called compound sentence equivalent in a Rumah Seribu Malaikat novels by Yuli Badawi and Hermawan Aksan .The research is know the writing of compound sentence equivalent in a Rumah Seribu Malaikat novels by Yuli Badawi and Hermawan Aksan in terms of replacement element predikat the subject , and the alignment of the elements in the form of the sentence . The Methods used is a method of descriptive qualitative with the approach . The result is this compound a an equivalent there are in a Rumah Seribu Malaikat novels by Yuli Badawi and Hermawan Aksan .The results is to known of writing compound sentence equivalent in a Rumah Seribu Malaikat novels by Yuli Badawi and Hermawan Aksan replacement have tended to elements the subject as well as having the alignment on every element in the form of the sentence

A matrix-valued point interactions model

We study a matrix-valued Schr\"odinger operator with random point interactions. We prove the absence of absolutely continuous spectrum for this operator by proving that away from a discrete set its Lyapunov exponents do not vanish. For this we use a criterion by Gol'dsheid and Margulis and we prove the Zariski denseness, in the symplectic group, of the group generated by the transfer matrices. Then we prove estimates on the transfer matrices which lead to the H\"older continuity of the Lyapunov exponents. After proving the existence of the integrated density of states of the operator, we also prove its H\"older continuity by proving a Thouless formula which links the integrated density of states to the sum of the positive Lyapunov exponents

On Matrix Product Ground States for Reaction-Diffusion Models

We discuss a new mechanism leading to a matrix product form for the stationary state of one-dimensional stochastic models. The corresponding algebra is quadratic and involves four different matrices. For the example of a coagulation-decoagulation model explicit four-dimensional representations are given and exact expressions for various physical quantities are recovered. We also find the general structure of $n$-point correlation functions at the phase transition.Comment: LaTeX source, 7 pages, no figure

Self-aligned silicidation of surround gate vertical MOSFETs for low cost RF applications

We report for the first time a CMOS-compatible silicidation technology for surround-gate vertical MOSFETs. The technology uses a double spacer comprising a polysilicon spacer for the surround gate and a nitride spacer for silicidation and is successfully integrated with a Fillet Local OXidation (FILOX) process, which thereby delivers low overlap capacitance and high drive-current vertical devices. Silicided 80-nm vertical n-channel devices fabricated using 0.5-?m lithography are compared with nonsilicided devices. A source–drain (S/D) activation anneal of 30 s at 1100 ?C is shown to deliver a channel length of 80 nm, and the silicidation gives a 60% improvement in drive current in comparison with nonsilicided devices. The silicided devices exhibit a subthreshold slope (S) of 87 mV/dec and a drain-induced barrier lowering (DIBL) of 80 mV/V, compared with 86 mV/dec and 60 mV/V for nonsilicided devices. S-parameter measurements on the 80-nm vertical nMOS devices give an fT of 20 GHz, which is approximately two times higher than expected for comparable lateral MOSFETs fabricated using the same 0.5-?m lithography. Issues associated with silicidation down the pillar sidewall are investigated by reducing the activation anneal time to bring the silicided region closer to the p-n junction at the top of the pillar. In this situation, nonlinear transistor turn-on is observed in drain-on-top operation and dramatically degraded drive current in source-on-top operation. This behavior is interpreted using mixed-mode simulations, which show that a Schottky contact is formed around the perimeter of the pillar when the silicided contact penetrates too close to the top S/D junction down the side of the pillar

Counseling Arab and Chaldean American Families

The last century has seen an increase in the population of Americans of Arab and Chaldean descent. In recent decades, clinicians have articulated the goal of enhancing their knowledge of cultural diversity for the purpose of improving their appreciation for diversity and the quality of their mental health interventions with diverse populations. However, there is currently little systematic empirical research regarding the counseling of Arab and Chaldean Americans, although awareness of the need for such research among mental health professionals has started to emerge. The purpose of this paper is to provide an integrative review of the values and socio-cultural forces that are relevant to the counseling of this population in North America, and to provide some culturally sensitive recommendations for working with American families of Arab and Chaldean ethnicity. In particular, we propose that effective interventions with clients of Arab and Chaldean ethnic backgrounds will need to be informed by an understanding of the everyday sociopolitical contextual background of target clients and the impact of values and acculturation processes on the family network

Organisational participation and women - an attitude problem?

Employee participation is a dynamic and contested area of organisational behaviour, attracting continuing academic, practitioner and policy interest and debate. This chapter focuses on organisational participation and women