A Mixed Integer Programming Model for Improving Theater Distribution Force Flow Analysis

Obtaining insight into potential vehicle mixtures that will support theater distribution, the final leg of military distribution, can be a challenging and time consuming process for United States Transportation Command (USTRANSCOM) force flow analysts. The current process of testing numerous different vehicle mixtures until separate simulation tools demonstrate feasibility is iterative and overly burdensome. Improving on existing research, a mixed integer programming model was developed to allocate specific vehicle types to delivery items, or requirements, in a manner that would minimize both operational costs and late deliveries. This gives insight into the types and amounts of vehicles necessary for feasible delivery and identifies possible bottlenecks in the physical network. Further solution post-processing yields potential vehicle beddowns which can then be used as approximate baselines for further distribution analysis. A multimodal, heterogeneous set of vehicles is used to model the pickup and delivery of requirements within given time windows. To ensure large scale problems do not become intractable, precise set notation is utilized within the mixed integer program to ensure only necessary variables and constraints are generated

Compact environmental spectroscopy using advanced semiconductor light-emitting diodes and lasers

This report summarizes research completed under a Laboratory Directed Research and Development program funded for part of FY94, FY95 and FY96. The main goals were (1) to develop novel, compound-semiconductor based optical sources to enable field-based detection of environmentally important chemical species using miniaturized, low-power, rugged, moderate cost spectroscopic equipment, and (2) to demonstrate the utility of near-infrared spectroscopy to quantitatively measure contaminants. Potential applications would include monitoring process and effluent streams for volatile organic compound detection and sensing head-space gasses in storage vessels for waste management. Sensing is based on absorption in the 1.3-1.9 {mu}m band from overtones of the C-H, N-H and O-H stretch resonances. We describe work in developing novel broadband light-emitting diodes emitting over the entire 1.4-1.9 {mu}m wavelength range, first using InGaAs quantum wells, and second using a novel technique for growing digital-alloy materials in the InAlGaAs material system. Next we demonstrate the utility of near-infrared spectroscopy for quantitatively determining contamination of soil by motor oil. Finally we discuss the separability of different classes of organic compounds using near-infrared spectroscopic techniques

AlGaAs/GaAs transverse junction stripe lasers with distributed feedback

Transverse junction stripe (TJS) lasers with periodic feedback were fabricated in two geometries. An interferometric and wet chemical etching technique was used to create a feedback grating across the entire pumping region for the distributed feedback (DFB) TJS laser and to create the separate distributed Bragg reflectors/DBR) for the TJS/DBR laser. The TJS/DFB laser was a double heterostructure device grown by liquid phase epitaxy (LPE) and had a third order grating etched in the top ALO.2GaO.8As layer. The grating was buried by growing an ALO.35GaO.65As layer on the grating by metal organic chemical vapor deposition (MO-CVD). The TJS/DBR laser was also fabricated in an LPE double heterostructure. The top AlGaAs layer was thinned to 0.1 micron over more than half of the laser so that the grating would be close to the GaAs active layer and optical field. Single mode operation in both configurations was obtained. The thermal shift of the laser wavelength in both cases was less than 1 Angstrom/deg K, compared to the 3 Angstrom/deg K shift of the spontaneous emission peak

Picosecond absorption dynamics of photoexcited InGaP epitaxial films

Includes bibliographical references (page 92).The absorption recovery of a photoexcited InGaP epitaxial film 0.4 µm thick was investigated using the pump-probe laser technique and found to have a time constant of 55 ps at room temperature. Measurements done in the temperature range of 300-50 K show the decay of the photoexcited carrier distribution to be dominated by ambipolar diffusion and surface recombination. The measured absorption recovery time constant corresponds to an ambipolar diffusion coefficient D > 2.8 cm2/s and a surface recombination velocity of S > 4 × 105 cm/s at room temperature.This work was supported by the National Science Foundation grant (USA/Argentina) INT 8802563, the Air Force Office of Scientific Research (contract 89-0513), and the Center for Optoelectronic Computing Systems, sponsored by the National Science Foundation/Engineering Research Center grant ECD 9015128 and by the Colorado Advanced Technology Institute, an agency of the State of Colorado. C. S. Menoni acknowledges the support of the National Science Foundation grant ECS 9008899 and the CSU Faculty Research Grant

High Speed Traveling Wave Electrooptic Intensity Modulator with a Doped PIN Semiconductor Junction

A high-electrooptic-efficiency Mach-Zehnder intensity modulator is demonstrated with a bandwidth exceeding 40 GHZ. The 1 mm-long modulator has a switching voltage comparable to undoped semiconductor designs of much greater length

Of Microbes and Men: Determining Sources of Nitrate in a High Alpine Catchment in the Front Range of Colorado and Science Outreach on Alpine Hydrology

High elevation ecosystems throughout the Colorado Front Range are undergoing changes in biogeochemical cycling due to an increase in nitrogen deposition in precipitation and a changing climate. While nitrate concentrations continue to rise in surface water of the Green Lakes Valley (GLV) by 0.27 umol L-1 per year, atmospheric deposition of inorganic nitrogen has recently curtailed due to drought, leaving a gap in our understanding of the source of the increased export of nitrate. Here, we employ a novel triple isotope method, using Δ17O-NO3- for the first time in an alpine catchment to quantify the terrestrial and atmospheric contribution of nitrate to numerous water types in GLV. Results show that nitrate in surface waters, including talus, soil water and rock glacier melt, is more than 75% terrestrial, with the strongest atmospheric signals present during snowmelt. Results suggest that alpine catchment biogeochemistry in GLV has transitioned to a net nitrification system

InGaAs/InP heterojunction bipolar transistors for ultra-low power circuit applications

For many modern day portable electronic applications, low power high speed devices have become very desirable. Very high values of f{sub T} and f{sub MAX} have been reported with InGaAs/InP heterojunction bipolar transistors (HBTs), but only under high bias and high current level operating conditions. An InGaAs/InP ultra-lowpower HBT with f{sub MAX} greater than 10 GHz operating at less than 20 {micro}A has been reported for the first time in this work. The results are obtained on a 2.5 x 5 {micro}m{sup 2} device, corresponding to less than 150 A/cm{sup 2} of current density. These are the lowest current levels at which f{sub MAX} {ge} 10 GHz has been reported

ECR, ICP, and RIE plasma etching of GaN

The group III-nitrides continue to generate interest due to their wide band gaps and high dielectric constants. These materials have made significant impact on the compound semiconductor community as blue and ultraviolet light emitting diodes (LEDs). Realization of more advanced devices; including lasers and high temperature electronics, requires dry etch processes which are well controlled, smooth, highly anisotropic and have etch rates exceeding 0.5 {mu}m/min. In this paper, we compare electron cyclotron resonance (ECR), inductively coupled plasma (ICP), and reactive ion etch (RIE) etch results for GaN. These are the first ICP etch results reported for GaN. We also report ECR etch rates for GaN as a function of growth technique

Comparison of InP/InGaAs HBT and InAlAs/InGaAs HBT for ULP Applications

The increased demand for portable electronics has lead to the need for higher performance and efficiency. Devices operating at less than 50 {micro}W of power are defined as ultra-low-power (ULP) devices. New progress has been achieved on InP/InGaAs HBT and InAIAs/InGaAs HBT optimized for ULP applications. f{sub T} values of 2.2 GHz, and f{sub MAX} values of 20 GHz have been obtained for HBTs operating at less than 40 {micro}W. Current gain is greater than 45 with the device operating at less than 20 {micro}A on a 2.5 x 5 {micro}m{sup 2} device. These devices have been significantly improved over the previously reported MOCVD grown InP/InGaAs ULP HBT which has f{sub MAX} of 10 GHz operating in the ultra-low-power level. The improvements have been attributed to the reduction of base dopant diffusion associated with Zn doping