DESIGN AND ANALYSIS OF TAPERED SLOT AN- TENNA WITH 3.5/5.5 GHz BAND-NOTCHED CHARAC- TERISTICS

Abstract—A novel tapered slot antenna (TSA) with 3.5/5.5 GHz dual band-notched characteristics for ultra-wideband (UWB) radios is proposed in this paper. To realize dual band-notched characteristics at the TSA, we employ (a) a pair of nested C-shaped stubs beside the feed line and (b) a broadband microstrip-to-slot-line transition with an Archimedean spiral-shaped slot. The proposed antenna has been successfully simulated, implemented, and measured. An equivalent circuit model of the proposed antenna is also presented to discuss the mechanism of the dual band-notched TSA. The measured data for the optimized case show the bandwidth for the VSWR < 2 to be 9.2 GHz (from 2.4 to 11.6 GHz) with two notched bands of 3.1– 4.0 GHz (WiMAX band) and 5.1–6.2 GHz (WLAN band), respectively. The measured electrical parameters of the proposed antenna and its radiation patterns show excellent performance with good pulse handling capabilities. Also, the 3.5/5.5 GHz dual band-notched characteristics are achieved without increasing the size of the single band-notched TSA reported previously. 1

Competitive Hybridization of a Microarray Identifies CMKLR1 as an Up-Regulated Gene in Human Bone Marrow-Derived Mesenchymal Stem Cells Compared to Human Embryonic Fibroblasts

Mesenchymal stem cells (MSCs) have been widely applied to the regeneration of damaged tissue and the modulation of immune response. The purity of MSC preparation and the delivery of MSCs to a target region are critical factors for success in therapeutic application. In order to define the molecular identity of an MSC, the gene expression pattern of a human bone marrow-derived mesenchymal stem cell (hBMSC) was compared with that of a human embryonic fibroblast (hEF) by competitive hybridization of a microarray. A total of 270 and 173 genes were two-fold up- and down-regulated with FDR < 0.05 in the hBMSC compared to the hEF, respectively. The overexpressed genes in the hBMSC over the hEF, including transcription factors, were enriched for biological processes such as axial pattern formation, face morphogenesis and skeletal system development, which could be expected from the differentiation potential of MSCs. CD70 and CD339 were identified as additional CD markers that were up-regulated in the hBMSC over the hEF. The differential expression of CD70 and CD339 might be exploited to distinguish hEF and hBMSC. CMKLR1, a chemokine receptor, was up-regulated in the hBMSC compared to the hEF. RARRES2, a CMKLR1 ligand, stimulated specific migration of the hBMSC, but not of the hEF. RARRES2 manifested as ~two-fold less effective than SDF-1α in the directional migration of the hBMSC. The expression of CMKLR1 was decreased upon the osteoblastic differentiation of the hBMSC. However, the RARRES2-loaded 10% HA-silk scaffold did not recruit endogenous cells to the scaffold in vivo. The RARRES2–CMKLR1 axis could be employed in recruiting systemically delivered or endogenous MSCs to a specific target lesion

Gate‐Tunable Potential Barrier on Dual‐Gate Graphene Transistor with Fluorocarbon Thin Film

Abstract This article reports on the charge transport characteristics across the potential barrier generated by a local dual‐gate modulation at the surface of p‐doped graphene via surface contact on a fluorocarbon (CF) thin film. Owing to simple physical contact, the strong electron affinity of the fluorine atoms in CF stably increases the hole density of graphene, which leads to a massive p‐doping effect in graphene. Then, potential barrier height can be generated and modulated across the channel by forming a local dual‐gate device structure. Different gate biases in dual‐gate operation can split electrical characteristics of a single graphene into highly conductive region and region of sparse charge density, creating large chemical potential difference at the boundary between the two which determines the value of barrier height. Moreover, the device characteristics follow a simple model of the metal–semiconductor junction well in addition to the effect of charge concentration discrepancy in graphene. These results reveal that it is possible to create an ideal and controllable potential barrier composed of a single material using the highly doped graphene with the local dual‐gate structure