12 research outputs found
Monte Carlo simulation of MBE growth of GaAs analysis of RHEED
No full textModern optoelectronic devices such as quantum well lasers contain thin layers (20-100 Å) of different semiconductor materials. Mostly one uses III-V compound semiconductors for example GaAs, AlGaAs, InP, InGaAs etc. These structures are grown using MOCVD, MBE or CBE growth technologies1. All these techniques have in common that one operates under a large excess of group V elements, which serves to stabilize the surface
The pharmacokinetics of erythropoietin in the cerebrospinal fluid after intravenous administration of recombinant human erythropoietin
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Identification of Laser Intensity Assuring the Destruction of Target Region of Biological Tissue Using the Gradient Method and Generalized Dual-Phase Lag Equation
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A Fitted Second-Order Difference Method for a Parameterized Problem with Integral Boundary Condition Exhibiting Initial Layer
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Clinical, radiological, and pathological spectrum of angiographically occult intracranial vascular malformations
No full textIL-10 signaling in dendritic cells controls IL-1β-mediated IFNγ secretion by human CD4+ T cells: relevance to inflammatory bowel disease
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