Sidewall depletion in nano-patterned LAO/STO heterostructures

We report the fabrication of nanostructures from the quasi-two-dimensional electron gas (q2DEG) formed at the LaAlO$_{3}$/ SrTiO$_{3}$ (LAO/STO) interface. The process uses electron beam lithography in combination with reactive ion etching. This technique allows to pattern high-quality structures down to lateral dimensions as small as $100$nm while maintaining the conducting properties without inducing conductivity in the STO substrate. Temperature dependent transport properties of patterned Hall bars of various widths show only a small size dependence of conductivity at low temperature as well as at room temperature. The deviation can be explained by a narrow lateral depletion region. All steps of the patterning process are fully industry compatible.Comment: 5 pages, 4 figure

Enhancement of spin mixing conductance in La_0.7Sr_0.3MnO₃/LaNiO₃/SrRuO₃ heterostructures

Spin pumping and the effective spin-mixing conductance in heterostructures based on magnetic oxide trilayers composed of La0.7Sr0.3MnO3 (LSMO), LaNiO3 (LNO), and SrRuO3 (SRO) are investigated. The heterostructures serve as a model system for an estimation of the effective spin-mixing conductance at the different interfaces. The results show that by introducing a LNO interlayer between LSMO and SRO, the total effective spin-mixing conductance increases due to the much more favorable interface of LSMO/LNO with respect to the LSMO/SRO interface. Nevertheless, the spin current into the SRO does not decrease because of the spin diffusion length of λLNO ≈ 3.2nm in the LNO. This value is two times higher than that of SRO. The results show the potential of using oxide interfaces to tune the effective spin-mixing conductance in heterostructures and to bring novel functionalities into spintronics by implementing complex oxides

Atomic layer deposition of cobalt phosphide for efficient water splitting

Transition‐metal phosphides (TMP) prepared by atomic layer deposition (ALD) are reported for the first time. Ultrathin Co‐P films were deposited by using PH3 plasma as the phosphorus source and an extra H2 plasma step to remove excess P in the growing films. The optimized ALD process proceeded by self‐limited layer‐by‐layer growth, and the deposited Co‐P films were highly pure and smooth. The Co‐P films deposited via ALD exhibited better electrochemical and photoelectrochemical hydrogen evolution reaction (HER) activities than similar Co‐P films prepared by the traditional post‐phosphorization method. Moreover, the deposition of ultrathin Co‐P films on periodic trenches was demonstrated, which highlights the broad and promising potential application of this ALD process for a conformal coating of TMP films on complex three‐dimensional (3D) architectures