Study made of interaction between sound fields and structural vibrations

Study analyzes structural vibrations and the interactions between them and sound fields. It outlines a conceptual framework to analyze the vibrations of systems and their interactions, incorporating the results of earlier studies and establishing a unified basis for continuing research

Flow field prediction and analysis study for project RAM B3 Final report

Flow field properties in shock layer surrounding Ram B3 vehicl

Low-frequency noise reduction of spacecraft structures

Low frequency noise reduction of spacecraft structure

Valley splitting of Si/SiGe heterostructures in tilted magnetic fields

We have investigated the valley splitting of two-dimensional electrons in high quality Si/Si$_{1-x}$Ge$_x$ heterostructures under tilted magnetic fields. For all the samples in our study, the valley splitting at filling factor $\nu=3$ ($\Delta_3$) is significantly different before and after the coincidence angle, at which energy levels cross at the Fermi level. On both sides of the coincidence, a linear density dependence of $\Delta_3$ on the electron density was observed, while the slope of these two configurations differs by more than a factor of two. We argue that screening of the Coulomb interaction from the low-lying filled levels, which also explains the observed spin-dependent resistivity, is responsible for the large difference of $\Delta_3$ before and after the coincidence.Comment: REVTEX 4 pages, 4 figure

Electron Paramagnetic Resonance of Boron Acceptors in Isotopically Purified Silicon

The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si are found to reduce dramatically in isotopically purified 28Si single crystals. Moreover, extremely narrow substructures in the EPR spectra are visible corresponding to either an enhancement or a reduction of the absorbed microwave on resonance. The origin of the substructures is attributed to a combination of simultaneous double excitation and spin relaxation in the four level spin system of the acceptors. A spin population model is developed which qualitatively describes the experimental results.Comment: 4 pages, 3 figure

Fluorescent Silicon Clusters and Nanoparticles

The fluorescence of silicon clusters is reviewed. Atomic clusters of silicon have been at the focus of research for several decades because of the relevance of size effects for material properties, the importance of silicon in electronics and the potential applications in bio-medicine. To date numerous examples of nanostructured forms of fluorescent silicon have been reported. This article introduces the principles and underlying concepts relevant for fluorescence of nanostructured silicon such as excitation, energy relaxation, radiative and non-radiative decay pathways and surface passivation. Experimental methods for the production of silicon clusters are presented. The geometric and electronic properties are reviewed and the implications for the ability to emit fluorescence are discussed. Free and pure silicon clusters produced in molecular beams appear to have properties that are unfavourable for light emission. However, when passivated or embedded in a suitable host, they may emit fluorescence. The current available data show that both quantum confinement and localised transitions, often at the surface, are responsible for fluorescence. By building silicon clusters atom by atom, and by embedding them in shells atom by atom, new insights into the microscopic origins of fluorescence from nanoscale silicon can be expected.Comment: 5 figures, chapter in "Silicon Nanomaterials Sourcebook", editor Klaus D. Sattler, CRC Press, August 201

Slave-Boson Functional-Integral Approach to the Hubbard Model with Orbital Degeneracy

A slave-boson functional-integral method has been developed for the Hubbard model with arbitrary, orbital degeneracy $D$. Its saddle-point mean-field theory is equivalent to the Gutzwiller approximation, as in the case of single-band Hubbard model. Our theory is applied to the doubly degenerate ($D = 2$) model, and numerical calculations have been performed for this model in the paramagnetic states. The effect of the exchange interaction on the metal-insulator (MI) transition is discussed. The critical interaction for the MI transition is analytically calculated as functions of orbital degeneracy and electron occupancy.Comment: Latex 20 pages, 9 figures available on request to [email protected] Note: published in J. Physical Society of Japan with some minor modification

Host isotope mass effects on the hyperfine interaction of group-V donors in silicon

The effects of host isotope mass on the hyperfine interaction of group-V donors in silicon are revealed by pulsed electron nuclear double resonance (ENDOR) spectroscopy of isotopically engineered Si single crystals. Each of the hyperfine-split P-31, As-75, Sb-121, Sb-123, and Bi-209 ENDOR lines splits further into multiple components, whose relative intensities accurately match the statistical likelihood of the nine possible average Si masses in the four nearest-neighbor sites due to random occupation by the three stable isotopes Si-28, Si-29, and Si-30. Further investigation with P-31 donors shows that the resolved ENDOR components shift linearly with the bulk-averaged Si mass.Comment: 5 pages, 4 figures, 1 tabl