2,101 research outputs found

    Nanometer lithography on silicon and hydrogenated amorphous silicon with low-energy electrons

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    We report the local oxidation of hydrogen terminated silicon (Si) surfaces induced with the scanning-tunneling microscope (STM) operating in air and by a beam of free low-energy electrons. With STM, oxide lines were written in Si(100) and Si(110) and transferred into the substrate by wet etching. In case of Si(110) trenches with a width as small as 35 nm and a depth of 300 nm were made. The same process has also successfully been applied to the patterning of hydrogenated amorphous silicon (a-Si:H) thin films. We demonstrate the fabrication of metallic ‘nanowires’ using a-Si:H as resist layer. With regard to the process of oxidation, it is found that the oxide written with STM is apparently not proportional to the electron current, in contrast to results obtained with a beam of free electrons in an oxygen gas-environment. The dose needed to remove the hydrogen was determined as a function of electron energy. This dose is minimal for 100 eV electrons amounting to 4 mC/cm2

    Magnetoresistence engineering and singlet/triplet switching in InAs nanowire quantum dots with ferromagnetic sidegates

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    We present magnetoresistance (MR) experiments on an InAs nanowire quantum dot device with two ferromagnetic sidegates (FSGs) in a split-gate geometry. The wire segment can be electrically tuned to a single dot or to a double dot regime using the FSGs and a backgate. In both regimes we find a strong MR and a sharp MR switching of up to 25\% at the field at which the magnetizations of the FSGs are inverted by the external field. The sign and amplitude of the MR and the MR switching can both be tuned electrically by the FSGs. In a double dot regime close to pinch-off we find {\it two} sharp transitions in the conductance, reminiscent of tunneling MR (TMR) between two ferromagnetic contacts, with one transition near zero and one at the FSG switching fields. These surprisingly rich characteristics we explain in several simple resonant tunneling models. For example, the TMR-like MR can be understood as a stray-field controlled transition between singlet and a triplet double dot states. Such local magnetic fields are the key elements in various proposals to engineer novel states of matter and may be used for testing electron spin-based Bell inequalities.Comment: 7 pages, 6 figure

    Large oscillating non-local voltage in multi-terminal single wall carbon nanotube devices

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    We report on the observation of a non-local voltage in a ballistic one-dimensional conductor, realized by a single-wall carbon nanotube with four contacts. The contacts divide the tube into three quantum dots which we control by the back-gate voltage VgV_g. We measure a large \emph{oscillating} non-local voltage VnlV_{nl} as a function of VgV_g with zero mean. Though a classical resistor model can account for a non-local voltage including change of sign, it fails to describe the magnitude properly. The large amplitude of VnlV_{nl} is due to quantum interference effects and can be understood within the scattering-approach of electron transport

    Controlling spin in an electronic interferometer with spin-active interfaces

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    We consider electronic current transport through a ballistic one-dimensional quantum wire connected to two ferromagnetic leads. We study the effects of the spin-dependence of interfacial phase shifts (SDIPS) acquired by electrons upon scattering at the boundaries of the wire. The SDIPS produces a spin splitting of the wire resonant energies which is tunable with the gate voltage and the angle between the ferromagnetic polarizations. This property could be used for manipulating spins. In particular, it leads to a giant magnetoresistance effect with a sign tunable with the gate voltage and the magnetic field applied to the wire.Comment: 5 pages, 3 figures. to be published in Europhysics Letter

    Tuning the Josephson current in carbon nanotubes with the Kondo effect

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    We investigate the Josephson current in a single wall carbon nanotube connected to superconducting electrodes. We focus on the parameter regime in which transport is dominated by Kondo physics. A sizeable supercurrent is observed for odd number of electrons on the nanotube when the Kondo temperature Tk is sufficiently large compared to the superconducting gap. On the other hand when, in the center of the Kondo ridge, Tk is slightly smaller than the superconducting gap, the supercurrent is found to be extremely sensitive to the gate voltage Vbg. Whereas it is largely suppressed at the center of the ridge, it shows a sharp increase at a finite value of Vbg. This increase can be attributed to a doublet-singlet transition of the spin state of the nanotube island leading to a pi shift in the current phase relation. This transition is very sensitive to the asymmetry of the contacts and is in good agreement with theoretical predictions.Comment: 5 pages, 4 figure

    Local electrical tuning of the nonlocal signals in a Cooper pair splitter

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    A Cooper pair splitter consists of a central superconducting contact, S, from which electrons are injected into two parallel, spatially separated quantum dots (QDs). This geometry and electron interactions can lead to correlated electrical currents due to the spatial separation of spin-singlet Cooper pairs from S. We present experiments on such a device with a series of bottom gates, which allows for spatially resolved tuning of the tunnel couplings between the QDs and the electrical contacts and between the QDs. Our main findings are gate-induced transitions between positive conductance correlation in the QDs due to Cooper pair splitting and negative correlations due to QD dynamics. Using a semi-classical rate equation model we show that the experimental findings are consistent with in-situ electrical tuning of the local and nonlocal quantum transport processes. In particular, we illustrate how the competition between Cooper pair splitting and local processes can be optimized in such hybrid nanostructures.Comment: 9 pages, 6 figures, 2 table

    Multi-wall carbon nanotubes as quantum dots

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    We have measured the differential conductance dI/dV of individual multi-wall carbon nanotubes (MWNT) of different lengths. A cross-over from wire-like (long tubes) to dot-like (short tubes) behavior is observed. dI/dV is dominated by random conductance fluctuations (UCF) in long MWNT devices (L=2...7 μm\mu m), while Coulomb blockade and energy level quantization are observed in short ones (L=300 nm). The electron levels of short MWNT dots are nearly four-fold degenerate (including spin) and their evolution in magnetic field (Zeeman splitting) agrees with a g-factor of 2. In zero magnetic field the sequential filling of states evolves with spin S according to S=0 -> 1/2 -> 0... In addition, a Kondo enhancement of the conductance is observed when the number of electrons on the tube is odd.Comment: 10 pages, 4 figure

    Improving the establishment submodel of a forest patch model to assess the long-term protective effect of mountain forests

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    Simulation models such as forest patch models can be used to forecast the development of forest structural attributes over time. However, predictions of such models with respect to the impact of forest dynamics on the long-term protective effect of mountain forests may be of limited accuracy where tree regeneration is simulated with little detail. For this reason, we improved the establishment submodel of the ForClim forest patch model by implementing a more detailed representation of tree regeneration. Our refined submodel included canopy shading and ungulate browsing, two important constraints to sapling growth in mountain forests. To compare the old and the new establishment submodel of ForClim, we simulated the successional dynamics of the Stotzigwald protection forest in the Swiss Alps over a 60-year period. This forest provides protection for an important traffic route, but currently contains an alarmingly low density of tree regeneration. The comparison yielded a significantly longer regeneration period for the new model version, bringing the simulations into closer agreement with the known slow stand dynamics of mountain forests. In addition, the new model version was applied to forecast the future ability of the Stotzigwald forest to buffer the valley below from rockfall disturbance. Two scenarios were simulated: (1) canopy shading but no browsing impact, and (2) canopy shading and high browsing impact. The simulated stand structures were then compared to stand structure targets for rockfall protection, in order to assess their long-term protective effects. Under both scenarios, the initial sparse level of tree regeneration affected the long-term protective effect of the forest, which considerably declined during the first 40years. In the complete absence of browsing, the density of small trees increased slightly after 60years, raising hope for an eventual recovery of the protective effect. In the scenario that included browsing, however, the density of small trees remained at very low levels. With our improved establishment submodel, we provide an enhanced tool for studying the impacts of structural dynamics on the long-term protective effect of mountain forests. For certain purposes, it is important that predictive models of forest dynamics adequately represent critical processes for tree regeneration, such as sapling responses to low light levels and high browsing pressur

    Electronic Transport Spectroscopy of Carbon Nanotubes in a Magnetic Field

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    We report magnetic field spectroscopy measurements in carbon nanotube quantum dots exhibiting four-fold shell structure in the energy level spectrum. The magnetic field induces a large splitting between the two orbital states of each shell, demonstrating their opposite magnetic moment and determining transitions in the spin and orbital configuration of the quantum dot ground state. We use inelastic cotunneling spectroscopy to accurately resolve the spin and orbital contributions to the magnetic moment. A small coupling is found between orbitals with opposite magnetic moment leading to anticrossing behavior at zero field.Comment: 7 pages, 4 figure
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