Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelecronic devices

Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound ─ morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O3 (PZT) ─ are grown on silicon substrates at temperatures well below the standard CMOS process of semiconductor technology. The method, potentially transferable to a broader range of Zr:Ti ratios, is based on the addition of crystalline nanoseeds to photosensitive solutions of PZT resulting in perovskite crystallization from only 350 °C after the enhanced decomposition of metal precursors in the films by UV irradiation. A remanent polarization of 10.0 μC cm−2 is obtained for these films that is in the order of the switching charge densities demanded for FeRAM devices. Also, a dielectric constant of ~90 is measured at zero voltage which exceeds that of current single-oxide candidates for capacitance applications. The multifunctionality of the films is additionally demonstrated by their pyroelectric and piezoelectric performance. The potential integration of PZT layers at such low fabrication temperatures may redefine the concept design of classical microelectronic devices, besides allowing inorganic ferroelectrics to enter the scene of the emerging large-area, flexible electronics

POLARIZATION, ELECTROSTRICTION AND PIEZOELECTRIC ACTIVITY OF Pb(ZrxTi1-x)O3 CERAMICS

L'influence fondamentale du maximum de la constante diélectrique par une grande activité électromécanique, observée à la transition morphotropique des solutions solides de Pb(ZrxTi1-x)O3 est démontrée pour les compositions totales et celles qui sont modifiées par La.The fundamental influence of the maximum of the dielectric constant on the high electromechanical activity, observed at the morphotropic phase boundary of Pb(ZrxTi1-x)O3 solid solutions, is demonstrated for plain and La-modified compositions