Growth optimization and structural analysis for ferromagnetic Mn-doped ZnO layers deposited by radio frequency magnetron sputtering

The effect of the deposition temperature on the crystalline quality of (Zn,Mn)O is investigated in thin films prepared by radio frequency magnetronsputtering on c-plane sapphire and GaN substrates. The layers are made of a 0.5μm Mn-doped layer towards the surface on top of a 150nm pure ZnO buffer. Depending on the deposition temperature, the layers can exhibit a columnar structure; the adjacent domains are rotated from one another by 90°, putting [101¯0]and [11¯20] directions face to face. At high Mn concentration the columnar structure is blurred by the formation of Mn rich precipitates. Only one variety of domains is observed at an optimal deposition temperature of 500°C: they are slightly rotated around the [0001] axis (mosaic growth) and bounded by threading dislocations

SYZ mirror symmetry for hypertoric varieties

We construct a Lagrangian torus fibration on a smooth hypertoric variety and a corresponding SYZ mirror variety using $T$-duality and generating functions of open Gromov-Witten invariants. The variety is singular in general. We construct a resolution using the wall and chamber structure of the SYZ base.Comment: v_2: 31 pages, 5 figures, minor revision. To appear in Communications in Mathematical Physic

Initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates

We have investigated the initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films prepared by pulsed laser deposition on sapphire (0001) substrates. High-resolution x-ray diffraction and transmission electron microscopy studies revealed that the initial growth behavior and the microstructure of the films significantly depend on the growth parameters. ZnO films grown at 700 oC with 20 mTorr O2 partial pressure initiated with a columnar growth mode and contained two kinds of domains. These domains were in-plane orientated either ZnO[112-0]//Al2O3[101-0] or ZnO[101-0]//Al2O3[101-0], and were surrounded by highly defective domain boundaries with threading dislocations. The films grown at 800 oC with 1 mTorr O2 showed 2-dimensional layered growth with only one in-plane epitaxial relationship, ZnO[112-0]//Al2O3[101-0]. Most of the defects in the layered grown films were basal plane stacking faults near the interface between ZnO and the substrate. The formation mechanism of the 30o-twisted domains with the in-plane orientation of ZnO[101-0]//Al2O3[101-0] is discussed.Comment: 20 pages, 4 figure

Structural analysis of ferromagnetic Mn-doped ZnO thin films deposited by radio frequency magnetron sputtering

We report on the structural analysis of ferromagnetic Mn-doped ZnO thin films deposited by radio frequency magnetron sputtering, using transmission electron microscopy (TEM), high-resolution x-ray diffraction, and Rutherford backscattering spectroscopy (RBS) measurements. The ferromagnetic Mn-doped ZnO film showed magnetization hysteresis at 5 and 300 K. A TEM analysis revealed that the Mn-doped ZnO included a high density of round-shaped cubic and elongated hexagonal MnZn oxide precipitates. The incorporation of Mn caused a large amount of structural disorder in the crystalline columnar ZnO lattice, although the wurtzite crystal structure was maintained. The observed ferromagnetism is discussed based on the structural characteristics indicated by TEM and the behavior of Mn when it is substituted into a ZnO lattice derived from RBS measurements

Improved KL->pi e nu Form Factor and Phase Space Integral with Reduced Model Uncertainty

Using the published KTeV sample of 2 million KL-> pi e nu decays and a new form factor expansion with a rigorous bound on higher order terms, we present a new determination of the KL->pi e nu form factor and phase space integral. Compared to the previous KTeV result, the uncertainty in the new form factor expansion is negligible and results in an overall uncertainty in the phase space integral (IKe) that is a factor of two smaller: IKe = 0.15392 +- 0.00048 \.Comment: 3 pages, 2 figures, submitted to PRD Rapid Communicatio

Measurements of the Decay KL→e+e−γK_L \to e^+e^-\gamma

The E799-II (KTeV) experiment at Fermilab has collected 83262 $K_L \to e^+e^-\gamma$ events above a background of 79 events. We measure a decay width, normalized to the $K_L \to \pi^0\pi^0\pi^0_D$ (\pi^0 \to \gamma\gamma, \pi^0 to \gamma\gamma, \pi^0_D \to e^+e^-\gamma) decay width, of $\Gamma($K_L \to e^+e^-\gamma$)/\Gamma(K_L \to \pi^0\pi^0\pi^0_D) = (1.3302 \pm 0.0046_{stat} \pm 0.0102_{syst}) \times 10^{-3}$. We also measure parameters of two $K_L \gamma^{\ast}\gamma$ form factor models. In the Bergstrom, Masso, and Singer (BMS) parametrization, we find \caks = -0.517 \pm 0.030_{stat} \pm 0.022_{syst}. We separately fit for the first parameter of the D'Ambrosio, Isidori, and Portoles (DIP) model and find \adip = -1.729 \pm 0.043_{stat} \pm 0.028_{syst}.Comment: 5 pages, 3 figures, submitted to PR

A Measurement of the K0 Charge Radius and a CP Violating Asymmetry Together with a Search for CP Violating E1 Direct Photon Emission in the Rare Decay KL->pi+pi-e+e-

Using the complete KTeV data set of 5241 candidate KL->pi+pi-e+e- decays (including an estimated background of 204+-14 events), we have measured the coupling gCR=0.163+- 0.014(stat)+-0.023(syst) of the CP conserving charge radius process and from it determined a K0 charge radius of (K0)=(-0.077+-0.007(stat)+-0.011(syst)) fm**2. We have also determined a first experimental upper limit of 0.04 (90% CL) for the ratio |g_{E1}|/|g_{M1}| of the coupling for the E1 direct photon emission process relative to the coupling for M1 direct photon emission process. We also report the measurement of its associated vector form factor |gM1`|(1+ (a_1/a_2)/(M(rho)**2-M(K)**2)+2M(K)E(gamma*)) where |gM1`|=(1.11+- 0.12(stat)+-0.08(syst) and a_1/a_2 = (-0.744+-0.027(stat)0.032(syst)) GeV**2/c**2. In addition, a measurement of the manifestly CP violating asymmetry of magnitude (13.6+- 1.4+-(stat)+-1.5(syst))% in the CP and T odd angle phi between the decay planes of the e+e- and pi+pi- pairs in the KL center of mass system is reported