Constructive role of non-adiabaticity for quantized charge pumping

We investigate a recently developed scheme for quantized charge pumping based on single-parameter modulation. The device was realized in an AlGaAl-GaAs gated nanowire. It has been shown theoretically that non-adiabaticity is fundamentally required to realize single-parameter pumping, while in previous multi-parameter pumping schemes it caused unwanted and less controllable currents. In this paper we demonstrate experimentally the constructive and destructive role of non-adiabaticity by analysing the pumping current over a broad frequency range.Comment: Presented at ICPS 2010, July 25 - 30, Seoul, Kore

Room-Temperature Quantum Hall Effect in Graphene

The quantum Hall effect (QHE), one example of a quantum phenomenon that occur on a truly macroscopic scale, has been attracting intense interest since its discovery in 1980 and has helped elucidate many important aspects of quantum physics. It has also led to the establishment of a new metrological standard, the resistance quantum. Disappointingly, however, the QHE could only have been observed at liquid-helium temperatures. Here, we show that in graphene - a single atomic layer of carbon - the QHE can reliably be measured even at room temperature, which is not only surprising and inspirational but also promises QHE resistance standards becoming available to a broader community, outside a few national institutions.Comment: Published in Science online 15 February 200

Experimental evidence for the formation of stripe phases in Si/SiGe

We observe pronounced transport anisotropies in magneto-transport experiments performed in the two-dimensional electron system of a Si/SiGe heterostructure. They occur when an in-plane field is used to tune two Landau levels with opposite spin to energetic coincidence. The observed anisotropies disappear drastically for temperatures above 1 K. We propose that our experimental findings may be caused by the formation of a unidirectional stripe phase oriented perpendicular to the in-plane field.Comment: 4 pages, 3 figure

CuAu-type ordering in epitaxial CuInS₂ films

Ordering of Cu and In atoms in near-stoichiometric CuInS2 epitaxial films grown on Si (111) by molecular beam epitaxy was studied by transmission electron microscopy. Nonchalcopyrite ordering of the metal atoms in CuInS2 is observed, which is identified as CuAu-type ordering. Sharp spots in electron diffraction patterns reveal the ordered Cu and In atom planes alternating along the [001] direction over a long range. High-resolution electron microscopy confirms this ordering. The CuAu-ordered structure coexists with the chalcopyrite ordered structure, in agreement with theoretical prediction

Generation of energy selective excitations in quantum Hall edge states

We operate an on-demand source of single electrons in high perpendicular magnetic fields up to 30T, corresponding to a filling factor below 1/3. The device extracts and emits single charges at a tunable energy from and to a two-dimensional electron gas, brought into well defined integer and fractional quantum Hall (QH) states. It can therefore be used for sensitive electrical transport studies, e.g. of excitations and relaxation processes in QH edge states

Magnetoroton scattering by phonons in the fractional quantum Hall regime

Motivated by recent phonon spectroscopy experiments in the fractional quantum Hall regime we consider processes in which thermally excited magnetoroton excitations are scattered by low energy phonons. We show that such scattering processes can never give rise to dissociation of magnetorotons into unbound charged quasiparticles as had been proposed previously. In addition we show that scattering of magnetorotons to longer wavelengths by phonon absorption is possible because of the shape of the magnetoroton dispersion curve and it is shown that there is a characteristic cross-over temperature above which the rate of energy transfer to the electron gas changes from an exponential (activated) to a power law dependence on the effective phonon temperature.Comment: LaTex document, 3 eps figures. submitted to Phys Rev

Magnetic-field-induced singularities in spin dependent tunneling through InAs quantum dots

Current steps attributed to resonant tunneling through individual InAs quantum dots embedded in a GaAs-AlAs-GaAs tunneling device are investigated experimentally in magnetic fields up to 28 T. The steps evolve into strongly enhanced current peaks in high fields. This can be understood as a field-induced Fermi-edge singularity due to the Coulomb interaction between the tunneling electron on the quantum dot and the partly spin polarized Fermi sea in the Landau quantized three-dimensional emitter.Comment: 5 pages, 4 figure

Highly Anisotropic Transport in the Integer Quantum Hall Effect

At very large tilt of the magnetic (B) field with respect to the plane of a two-dimensional electron system the transport in the integer quantum Hall regime at $\nu$ = 4, 6, and 8 becomes strongly anisotropic. At these filling factors the usual {\em deep minima} in the magneto-resistance occur for the current flowing {\em perpendicular} to the in-plane B field direction but develop into {\em strong maxima} for the current flowing {\em parallel} to the in-plane B field. The origin of this anisotropy is unknown but resembles the recently observed anisotropy at half-filled Landau levels.Comment: 4 pages, 4 figure

Quantum Hall Effect in Three Dimensional Layered Systems

Using a mapping of a layered three-dimensional system with significant inter-layer tunneling onto a spin-Hamiltonian, the phase diagram in the strong magnetic field limit is obtained in the semi-classical approximation. This phase diagram, which exhibit a metallic phase for a finite range of energies and magnetic fields, and the calculated associated critical exponent, $\nu=4/3$, agree excellently with existing numerical calculations. The implication of this work for the quantum Hall effect in three dimensions is discussed.Comment: 4 pages + 4 figure

Dynamical scaling of the quantum Hall plateau transition

Using different experimental techniques we examine the dynamical scaling of the quantum Hall plateau transition in a frequency range f = 0.1-55 GHz. We present a scheme that allows for a simultaneous scaling analysis of these experiments and all other data in literature. We observe a universal scaling function with an exponent kappa = 0.5 +/- 0.1, yielding a dynamical exponent z = 0.9 +/- 0.2.Comment: v2: Length shortened to fulfil Journal criteri