3,269 research outputs found

    Hole Spin Coherence in a Ge/Si Heterostructure Nanowire

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    Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time T20.18 μsT_2^* \sim 0.18~\mathrm{\mu s} exceeds corresponding measurements in III-V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential in time, indicating the presence of a broadband noise source, rather than Gaussian, previously seen in systems with nuclear-spin-dominated dephasing.Comment: 15 pages, 4 figure

    Antilocalization of Coulomb Blockade in a Ge-Si Nanowire

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    The distribution of Coulomb blockade peak heights as a function of magnetic field is investigated experimentally in a Ge-Si nanowire quantum dot. Strong spin-orbit coupling in this hole-gas system leads to antilocalization of Coulomb blockade peaks, consistent with theory. In particular, the peak height distribution has its maximum away from zero at zero magnetic field, with an average that decreases with increasing field. Magnetoconductance in the open-wire regime places a bound on the spin-orbit length (lsol_{so} < 20 nm), consistent with values extracted in the Coulomb blockade regime (lsol_{so} < 25 nm).Comment: Supplementary Information available at http://bit.ly/19pMpd

    Gate Coupling to Nanoscale Electronics

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    The realization of single-molecule electronic devices, in which a nanometer-scale molecule is connected to macroscopic leads, requires the reproducible production of highly ordered nanoscale gaps in which a molecule of interest is electrostatically coupled to nearby gate electrodes. Understanding how the molecule-gate coupling depends on key parameters is crucial for the development of high-performance devices. Here we directly address this, presenting two- and three-dimensional finite-element electrostatic simulations of the electrode geometries formed using emerging fabrication techniques. We quantify the gate coupling intrinsic to these devices, exploring the roles of parameters believed to be relevant to such devices. These include the thickness and nature of the dielectric used, and the gate screening due to different device geometries. On the single-molecule (~1nm) scale, we find that device geometry plays a greater role in the gate coupling than the dielectric constant or the thickness of the insulator. Compared to the typical uniform nanogap electrode geometry envisioned, we find that non-uniform tapered electrodes yield a significant three orders of magnitude improvement in gate coupling. We also find that in the tapered geometry the polarizability of a molecular channel works to enhance the gate coupling

    Imaging a 1-electron InAs quantum dot in an InAs/InP nanowire

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    Nanowire heterostructures define high-quality few-electron quantum dots for nanoelectronics, spintronics and quantum information processing. We use a cooled scanning probe microscope (SPM) to image and control an InAs quantum dot in an InAs/InP nanowire, using the tip as a movable gate. Images of dot conductance vs. tip position at T = 4.2 K show concentric rings as electrons are added, starting with the first electron. The SPM can locate a dot along a nanowire and individually tune its charge, abilities that will be very useful for the control of coupled nanowire dots

    Effects of magnetic field and disorder on electronic properties of Carbon Nanotubes

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    Electronic properties of metallic and semiconducting carbon nanotubes are investigated in presence of magnetic field perpendicular to the CN-axis, and disorder introduced through energy site randomness. The magnetic field field is shown to induce a metal-insulator transition (MIT) in absence of disorder, and surprisingly disorder does not affect significantly the MIT. These results may find confirmation through tunneling experimentsComment: 4 pages, 6 figures. Phys. Rev. B (in press

    Algorithm for Adapting Cases Represented in a Tractable Description Logic

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    Case-based reasoning (CBR) based on description logics (DLs) has gained a lot of attention lately. Adaptation is a basic task in the CBR inference that can be modeled as the knowledge base revision problem and solved in propositional logic. However, in DLs, it is still a challenge problem since existing revision operators only work well for strictly restricted DLs of the \emph{DL-Lite} family, and it is difficult to design a revision algorithm which is syntax-independent and fine-grained. In this paper, we present a new method for adaptation based on the DL EL\mathcal{EL_{\bot}}. Following the idea of adaptation as revision, we firstly extend the logical basis for describing cases from propositional logic to the DL EL\mathcal{EL_{\bot}}, and present a formalism for adaptation based on EL\mathcal{EL_{\bot}}. Then we present an adaptation algorithm for this formalism and demonstrate that our algorithm is syntax-independent and fine-grained. Our work provides a logical basis for adaptation in CBR systems where cases and domain knowledge are described by the tractable DL EL\mathcal{EL_{\bot}}.Comment: 21 pages. ICCBR 201

    Self-directed growth of AlGaAs core-shell nanowires for visible light applications

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    Al(0.37)Ga(0.63)As nanowires (NWs) were grown in a molecular beam epitaxy system on GaAs(111)B substrates. Micro-photoluminescence measurements and energy dispersive X-ray spectroscopy indicated a core-shell structure and Al composition gradient along the NW axis, producing a potential minimum for carrier confinement. The core-shell structure formed during the growth as a consequence of the different Al and Ga adatom diffusion lengths.Comment: 20 pages, 7 figure
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