66,500 research outputs found
Epitaxial growth of Cu (001) on Si (001): Mechanisms of orientation development and defect morphology
We describe the evolution of microstructure during ultrahigh vacuum ion beam sputter deposition of Cu (001) at room temperature on hydrogen-terminated Si (001). In situ reflection high energy electron diffraction indicates growth of an epitaxial Cu (001) film on Si (001) with the intensity of the Bragg rods sharpening during 5–20 nm of Cu film growth. Post-growth x-ray diffraction indicates the Cu film has a mosaic spread of (001) textures of about ±2° and that a small fraction (0.001–0.01) is of (111) textures. High-resolution transmission electron microscopy shows an abrupt Cu/Si interface with no interfacial silicide, and reveals an evolution in texture with Cu thickness so as to reduce the mosaic spread about (001). Moiré contrast suggests a nearly periodic elastic strain field extending into the Cu and Si at the interface. Other aspects of film growth which are critical to epitaxy are also discussed
A Neural Network model with Bidirectional Whitening
We present here a new model and algorithm which performs an efficient Natural
gradient descent for Multilayer Perceptrons. Natural gradient descent was
originally proposed from a point of view of information geometry, and it
performs the steepest descent updates on manifolds in a Riemannian space. In
particular, we extend an approach taken by the "Whitened neural networks"
model. We make the whitening process not only in feed-forward direction as in
the original model, but also in the back-propagation phase. Its efficacy is
shown by an application of this "Bidirectional whitened neural networks" model
to a handwritten character recognition data (MNIST data).Comment: 16page
Del Pezzo surfaces and local inequalities
I prove new local inequality for divisors on smooth surfaces, describe its
applications, and compare it to a similar local inequality that is already
known by experts.Comment: 13 pages; to appear in the proceedings of the conference "Groups of
Automorphisms in Birational and Affine Geometry", Levico Terme (Trento), 201
Mechanically Induced Thermal Breakdown in Magnetic Shuttle Structures
A theory of a thermally induced single-electron "shuttling" instability in a
magnetic nanomechanical device subject to an external magnetic field is
presented in the Coulomb blockade regime of electron transport. The model
magnetic shuttle device considered comprises a movable metallic grain suspended
between two magnetic leads, which are kept at different temperatures and
assumed to be fully spin polarized with antiparallel magnetizations. For a
given temperature difference shuttling is found to occur for a region of
external magnetic fields between a lower and an upper critical field strength,
which separate the shuttling regime from normal small-amplitude "vibronic"
regimes. We find that (i) the upper critical magnetic field saturates to a
constant value in the high temperature limit and that the shuttle instability
domain expands with a decrease of the temperature, (ii) the lower critical
magnetic field depends not only on the temperature independent phenomenological
friction coefficient used in the model but also on intrinsic friction (which
vanishes in the high temperature limit) caused by magnetic exchange forces and
electron tunneling between the quantum dot and the leads. The feasibility of
using thermally driven magnetic shuttle systems to harvest thermal breakdown
phenomena is discussed.Comment: 9 pages, 2 figure
Reentrant phase diagram of branching annihilating random walks with one and two offsprings
We investigate the phase diagram of branching annihilating random walks with
one and two offsprings in one dimension. A walker can hop to a nearest neighbor
site or branch with one or two offsprings with relative ratio. Two walkers
annihilate immediately when they meet. In general, this model exhibits a
continuous phase transition from an active state into the absorbing state
(vacuum) at a finite hopping probability. We map out the phase diagram by Monte
Carlo simulations which shows a reentrant phase transition from vacuum to an
active state and finally into vacuum again as the relative rate of the
two-offspring branching process increases. This reentrant property apparently
contradicts the conventional wisdom that increasing the number of offsprings
will tend to make the system more active. We show that the reentrant property
is due to the static reflection symmetry of two-offspring branching processes
and the conventional wisdom is recovered when the dynamic reflection symmetry
is introduced instead of the static one.Comment: 14 pages, Revtex, 4 figures (one PS figure file upon request)
(submitted to Phy. Rev. E
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