1,002 research outputs found

    Thermal Expansions in Wurtzite AlN, GaN, and InN: First-Principle Phonon Calculations

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    Using the first-principle phonon calculations under the quasiharmonic approximation, thermal expansions in III-nitrides with wurtzite AlN, GaN, and InN are reported. The results showed that it is different for each thermal expansion of three III-nitrides at low temperatures, which is consistent with their Grneisen parameters as the function of temperature. Below 50 K, negative thermal expansions occur in InN, while GaN and AlN follow the rule of positive thermal expansion. To seek the origin of positivenegative thermal expansion distinction, the mode Grneisen parameters and the phonon spectra are investigated. They indicate that different low-frequency phonon vibration modes correspond to the change of thermal expansions. Below 5 THz, the significant weighted negative values of mode Grneisen parameters, caused by the weakening of mixing-mode constituted with two transverse acoustic (TA) modes and a small overlapped part of optical modes, directly lead to the negative thermal expansion at low temperatures

    Spatial-Temporal Imaging of Anisotropic Photocarrier Dynamics in Black Phosphorus

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    As an emerging single elemental layered material with a low symmetry in-plane crystal lattice, black phosphorus (BP) has attracted significant research interest owing to its unique electronic and optoelectronic properties, including its widely tunable bandgap, polarization dependent photoresponse and highly anisotropic in-plane charge transport. Despite extensive study of the steady-state charge transport in BP, there has not been direct characterization and visualization of the hot carriers dynamics in BP immediately after photoexcitation, which is crucial to understanding the performance of BP-based optoelectronic devices. Here we use the newly developed scanning ultrafast electron microscopy (SUEM) to directly visualize the motion of photo-excited hot carriers on the surface of BP in both space and time. We observe highly anisotropic in-plane diffusion of hot holes, with a 15-times higher diffusivity along the armchair (x-) direction than that along the zigzag (y-) direction. Our results provide direct evidence of anisotropic hot carrier transport in BP and demonstrate the capability of SUEM to resolve ultrafast hot carrier dynamics in layered two-dimensional materials.Comment: 21 pages, 6 figure

    A facile analytical method for reliable selectivity examination in cofactor NADH regeneration

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    This work was supported by The Royal Society (ICA\R1\180317 and IES\R3\170162).Peer reviewedPublisher PD

    Maximum parsimony xor haplotyping by sparse dictionary selection

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    Background: Xor-genotype is a cost-effective alternative to the genotype sequence of an individual. Recent methods developed for haplotype inference have aimed at finding the solution based on xor-genotype data. Given the xor-genotypes of a group of unrelated individuals, it is possible to infer the haplotype pairs for each individual with the aid of a small number of regular genotypes. Results: We propose a framework of maximum parsimony inference of haplotypes based on the search of a sparse dictionary, and we present a greedy method that can effectively infer the haplotype pairs given a set of xor-genotypes augmented by a small number of regular genotypes. We test the performance of the proposed approach on synthetic data sets with different number of individuals and SNPs, and compare the performances with the state-of-the-art xor-haplotyping methods PPXH and XOR-HAPLOGEN. Conclusions: Experimental results show good inference qualities for the proposed method under all circumstances, especially on large data sets. Results on a real database, CFTR, also demonstrate significantly better performance. The proposed algorithm is also capable of finding accurate solutions with missing data and/or typing errors

    Assessing the environmental performance of NADH regeneration methods : A cleaner process using recyclable Pt/Fe3O4 and hydrogen

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    This work was supported by The Royal Society (IES\R3\170162 and RG150001) and The Binks Trust (1225).Peer reviewedPostprin

    Electrical Control of 2D Magnetism in Bilayer CrI3

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    The challenge of controlling magnetism using electric fields raises fundamental questions and addresses technological needs such as low-dissipation magnetic memory. The recently reported two-dimensional (2D) magnets provide a new system for studying this problem owing to their unique magnetic properties. For instance, bilayer chromium triiodide (CrI3) behaves as a layered antiferromagnet with a magnetic field-driven metamagnetic transition. Here, we demonstrate electrostatic gate control of magnetism in CrI3 bilayers, probed by magneto-optical Kerr effect (MOKE) microscopy. At fixed magnetic fields near the metamagnetic transition, we realize voltage-controlled switching between antiferromagnetic and ferromagnetic states. At zero magnetic field, we demonstrate a time-reversal pair of layered antiferromagnetic states which exhibit spin-layer locking, leading to a remarkable linear dependence of their MOKE signals on gate voltage with opposite slopes. Our results pave the way for exploring new magnetoelectric phenomena and van der Waals spintronics based on 2D materials.Comment: To appear in Nature Nanotechnolog
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