Plasmonic and semiconductor nanoparticles interfere with stereolithographic 3D printing

Two-photon polymerization stereolithographic three-dimensional (3D) printing is used for manufacturing a variety of structures ranging from microdevices to refractive optics. Incorporation of nanoparticles in 3D printing offers huge potential to create even more functional nanocomposite structures. However, this is difficult to achieve since the agglomeration of the nanoparticles can occur. Agglomeration not only leads to an uneven distribution of nanoparticles in the photoresin but also induces scattering of the excitation beam and altered absorption profiles due to interparticle coupling. Thus, it is crucial to ensure that the nanoparticles do not agglomerate during any stage of the process. To achieve noninteracting and well-dispersed nanoparticles on the 3D printing process, first, the stabilization of nanoparticles in the 3D printing resin is indispensable. We achieve this by functionalizing the nanoparticles with surface-bound ligands that are chemically similar to the photoresin that allows increased nanoparticle loadings without inducing agglomeration. By systematically studying the effect of different nanomaterials (Au nanoparticles, Ag nanoparticles, and CdSe/CdZnS nanoplatelets) in the resin on the 3D printing process, we observe that both, material-specific (absorption profiles) and unspecific (radical quenching at nanoparticle surfaces) pathways co-exist by which the photopolymerization procedure is altered. This can be exploited to increase the printing resolution leading to a reduction of the minimum feature size

Random manifolds in non-linear resistor networks: Applications to varistors and superconductors

We show that current localization in polycrystalline varistors occurs on paths which are, usually, in the universality class of the directed polymer in a random medium. We also show that in ceramic superconductors, voltage localizes on a surface which maps to an Ising domain wall. The emergence of these manifolds is explained and their structure is illustrated using direct solution of non-linear resistor networks

Prompt Alpha Decay of a Well-deformed Band in 58Ni

Two excited well-deformed bands have been observed in the semi-magic nucleus Ni-58. One of the bands was observed to partially decay by emission of a prompt discrete alpha particle that feeds the 2949 keV 6(+) spherical yrast state in the daughter nucleus Fe-54. This constitutes the first observation of prompt alpha emission from states lying in the deformed secondary minimum of the nuclear potential. gamma -ray linking transitions via several parallel paths establish the spin. parity, and excitation energy of this deformed band in Ni-58

Prompt Alpha Decay of a Well-deformed Band in 58Ni

Two excited well-deformed bands have been observed in the semi-magic nucleus Ni-58. One of the bands was observed to partially decay by emission of a prompt discrete alpha particle that feeds the 2949 keV 6(+) spherical yrast state in the daughter nucleus Fe-54. This constitutes the first observation of prompt alpha emission from states lying in the deformed secondary minimum of the nuclear potential. gamma -ray linking transitions via several parallel paths establish the spin. parity, and excitation energy of this deformed band in Ni-58

Tracking Intruder States

The deformation-driving effects of intruder states are studied by analysis of various types of data on rotational bands in rare-earth deformed nuclei. The sensitivity of four measurables (bandhead energy, B(E2) value, neutron i[sub 13/2] crossing frequency, and signature splitting) to increase deformation in an intruder band is shown. The analysis of signature splitting systematics is extended to know superdeformed bands

Signature inversion in semi-decoupled bands: Residual interaction between h9/2 protons and i13/2 neutrons

Semi-decoupled bands based on the πh9/2 ⊗ vi13/2 configuration are observed in 162Tm,164Tm and 174Ta. Spins assigned to these bands imply an inversion of the expected signature splitting, which is interpreted as being the result of a residual proton-neutron interactionComisión Interministerial de Ciencia y Tecnología PB95-0533US Dept. of Energy DE-FGOS- 92ER4069

Kinetic Control over Self-Assembly of Semiconductor Nanoplatelets

Semiconductor nanoplatelets exhibit spectrally pure, directional fluorescence. To make polarized light emission accessible and the charge transport effective, nanoplatelets have to be collectively oriented in the solid state. We discovered that the collective nanoplatelets orientation in monolayers can be controlled kinetically by exploiting the solvent evaporation rate in self-assembly at liquid interfaces. Our method avoids insulating additives such as surfactants, making it ideally suited for optoelectronics. The monolayer films with controlled nanoplatelets orientation (edge-up or face-down) exhibit long-range ordering of transition dipole moments and macroscopically polarized light emission. Furthermore, we unveil that the substantial in-plane electronic coupling between nanoplatelets enables charge transport through a single nanoplatelets monolayer, with an efficiency that strongly depends on the orientation of the nanoplatelets. The ability to kinetically control the assembly of nanoplatelets into ordered monolayers with tunable optical and electronic properties paves the way for new applications in optoelectronic devices