Study of the characteristics of photoresistors based on hydrochemically deposited films of Pb0.902Sn0.098Se solid solution

Experimental samples of photoresistors based on a Pb0. 902Sn0. 098Se-solid solution semiconductor films obtained by the layer-by-layer deposition of individual selenides of lead and tin(II) with subsequent thermal activation are developed. The structure and morphology of the thin-film compositions (SnSe-PbSe)2 are studied. The temperature dependences of the dark resistance, signal, noise and its ratio, as well as the frequency and spectral characteristics of photoresistors fabricated on the basis of Pb0. 902Sn0. 098Se films in the range of 205-300 K are studied. The optimal bias voltages are determined. It is shown that the location of the maximum and the right boundary of the photoresponse for Pb0. 902Sn0. 098Se-based photoresistors is shifted, in comparison with PbSe, toward the long-wavelength region by 0. 7 μm. The maximal detectivity of the studied photoresistors (2. 0 × 2. 0 mm) obtained at 230 K was 9 × 109 cm W-1 Hz1/2. The advantages of using the Pb0. 902Sn0. 098Se-based photoresistors in the spectral range of 3. 0-5. 5 μm compared with PbSe-based ones are shown. © 2013 Pleiades Publishing, Ltd

Study of the characteristics of photoresistors based on hydrochemically deposited films of Pb0.902Sn0.098Se solid solution

Abstract-Experimental samples of photoresistors based on a Pb 0.902 Sn 0.098 Se solid solution semiconductor films obtained by the layer by layer deposition of individual selenides of lead and tin(II) with subsequent thermal activation are developed. The structure and morphology of the thin film compositions (SnSe-PbSe) 2 are studied. The temperature dependences of the dark resistance, signal, noise and its ratio, as well as the fre quency and spectral characteristics of photoresistors fabricated on the basis of Pb 0.902 Sn 0.098 Se films in the range of 205-300 K are studied. The optimal bias voltages are determined. It is shown that the location of the maximum and the right boundary of the photoresponse for Pb 0.902 Sn 0.098 Se based photoresistors is shifted, in comparison with PbSe, toward the long wavelength region by 0.7 μm. The maximal detectivity of the stud ied photoresistors (2.0 × 2.0 mm) obtained at 230 K was 9 × 10 9 cm W -1 Hz 1/2 . The advantages of using the Pb 0.902 Sn 0.098 Se based photoresistors in the spectral range of 3.0-5.5 μm compared with PbSe based ones are shown