SiGeC alloy layer formation by high-dose C + implantations into pseudomorphic metastable Ge0.08Si0.92 on Si(100)

Dual-energy carbon implantation (1 × 1016/cm2 at 150 and at 220 keV) was performed on 260-nm-thick undoped metastable pseudomorphic Si(100)/ Ge0.08Si0.92 with a 450-nm-thick SiO2 capping layer, at either room temperature or at 100 °C. After removal of the SiO2 the samples were measured using backscattering/channeling spectrometry and double-crystal x-ray diffractometry. A 150-nm-thick amorphous layer was observed in the room temperature implanted samples. This layer was found to have regrown epitaxially after sequential annealing at 550 °C for 2 h plus at 700 °C for 30 min. Following this anneal, tensile strain, believed to result from a large fraction of substitutional carbon in the regrown layer, was observed. Compressive strain, that presumably arises from the damaged but nonamorphized portion of the GeSi layer, was also observed. This strain was not significantly affected by the annealing treatment. For the samples implanted at 100 °C, in which case no amorphous layer was produced, only compressive strain was observed. For samples implanted at both room temperature and 100 °C, the channelled backscattering yield from the Si substrate was the same as that of the virgin sample

Stress-Induced Delamination Of Through Silicon Via Structures

Continuous scaling of on-chip wiring structures has brought significant challenges for materials and processes beyond the 32 nm technology node in microelectronics. Recently three-dimensional (3-D) integration with through-silicon-vias (TSVs) has emerged as an effective solution to meet the future interconnect requirement. Thermo-mechanical reliability is a key concern for the development of TSV structures used in die stacking as 3-D interconnects. This paper examines the effect of thermal stresses on interfacial reliability of TSV structures. First, the three-dimensional distribution of the thermal stress near the TSV and the wafer surface is analyzed. Using a linear superposition method, a semi-analytic solution is developed for a simplified structure consisting of a single TSV embedded in a silicon (Si) wafer. The solution is verified for relatively thick wafers by comparing to numerical results obtained by finite element analysis (FEA). Results from the stress analysis suggest interfacial delamination as a potential failure mechanism for the TSV structure. Analytical solutions for various TSV designs are then obtained for the steady-state energy release rate as an upper bound for the interfacial fracture driving force, while the effect of crack length is evaluated numerically by FEA. Based on these results, the effects of TSV designs and via material properties on the interfacial reliability are elucidated. Finally, potential failure mechanisms for TSV pop-up due to interfacial fracture are discussed.Aerospace Engineerin

FeAs-based superconductivity: a case study of the effects of transition metal doping on BaFe2As2

The recently discovered FeAs-based superconductors are a new, promising set of materials for both technological as well as basic research. They offer transition temperatures as high as 55 K as well as essentially isotropic and extremely large upper, superconducting critical fields in excess of 40 T at 20 K. In addition they may well provide insight into exotic superconductivity that extends beyond just FeAs-based superconductivity, perhaps even shedding light on the still perplexing CuO-based high-Tc materials. Whereas superconductivity can be induced in the RFeAsO (R = rare earth) and AEFe2As2 (AE = Ba, Sr, Ca)) families by a number of means, transition metal doping of BaFe2As2, e.g. Ba(Fe1-xTMx)2As2, offers the easiest experimental access to a wide set of materials. In this review we present an overview and summary of the effect of TM doping (TM = Co, Ni, Cu, Pd, and Rh) on BaFe2As2. The resulting phase diagrams reveal the nature of the interaction between the structural, magnetic and superconducting phase transitions in these compounds and delineate a region of phase space that allows for the stabilization of superconductivity.Comment: edited and shortened version is accepted to AR:Condensed Matter Physic

A monolithic and flexible fluoropolymer film microreactor for organic synthesis applications

A photocurable and viscous fluoropolymer with chemical stability is a highly desirable material for fabrication of microchemical devices. Lack of a reliable fabrication method, however, limits actual applications for organic reactions. Herein, we report fabrication of a monolithic and flexible fluoropolymer film microreactor and its use as a new microfluidic platform. The fabrication involves facile soft lithography techniques that enable partial curing of thin laminates, which can be readily bonded by conformal contact without any external forces. We demonstrate fabrication of various functional channels (similar to 300 mu m thick) such as those embedded with either a herringbone micromixer pattern or a droplet generator. Organic reactions under strongly acidic and basic conditions can be carried out in this film microreactor even at elevated temperature with excellent reproducibility. In particular, the transparent film microreactor with good deformability could be wrapped around a light-emitting lamp for close contact with the light source for efficient photochemical reactions with visible light, which demonstrates easy integration with optical components for functional miniaturized systems.open1112Ysciescopu

An analysis of turbulent diffusion flame in axisymmetric jet

The kinetic theory of turbulent flow was employed to study the mixing limited combustion of hydrogen in axisymmetric jets. The integro-differential equations in two spatial and three velocity coordinates describing the combustion were reduced to a set of hyperbolic partial differential equations in the two spatial coordinates by a binodal approximation. The MacCormick's finite difference method was then employed for solution. The flame length was longer than that predicted by the flame-sheet analysis, and was found to be in general agreement with a recent experimental result. Increase of the turbulence energy and scale resulted in an enhancement of the combustion rate and, hence, in a shorter flame length. Details of the numerical method as well as of the physical findings are discussed