2,511 research outputs found

    Electronic structure of unidirectional superlattices in crossed electric and magnetic fields and related terahertz oscillations

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    We have studied Bloch electrons in a perfect unidirectional superlattice subject to crossed electric and magnetic fields, where the magnetic field is oriented ``in-plane'', i.e. in parallel to the sample plane. Two orientation of the electric field are considered. It is shown that the magnetic field suppresses the intersubband tunneling of the Zener type, but does not change the frequency of Bloch oscillations, if the electric field is oriented perpendicularly to both the sample plane and the magnetic field. The electric field applied in-plane (but perpendicularly to the magnetic field) yields the step-like electron energy spectrum, corresponding to the magnetic-field-tunable oscillations alternative to the Bloch ones.Comment: 7 pages, 1 figure, accepted for publication in Phys. Rev.

    Leukemia Inhibitory Factor Augments Neurotrophin Expression and Corticospinal Axon Growth after Adult CNS Injury

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    The cytokine leukemia inhibitory factor (LIF) modulates glial and neuronal function in development and after peripheral nerve injury, but little is known regarding its role in the injured adult CNS. To further understand the biological role of LIF and its potential mechanisms of action after CNS injury, effects of cellularly delivered LIF on axonal growth, glial activation, and expression of trophic factors were examined after adult mammalian spinal cord injury. Fibroblasts genetically modified to produce high amounts of LIF were grafted to the injured spinal cords of adult Fischer 344 rats. Two weeks after injury, animals with LIF-secreting cells showed a specific and significant increase in corticospinal axon growth compared with control animals. Furthermore, expression of neurotrophin-3, but not nerve growth factor, brain-derived neurotrophic factor, glia cell line-derived neurotrophic factor, or ciliary neurotrophic factor, was increased at the lesion site in LIF-grafted but not in control subjects. No differences in astroglial and microglial/macrophage activation were observed. Thus, LIF can directly or indirectly modulate molecular and cellular responses of the adult CNS to injury. These findings also demonstrate that neurotrophic molecules can augment expression of other trophic factors in vivo after traumatic injury in the adult CNS

    The Pavlik Harness in the Treatment of Congenital Dislocating Hip: Report on a Multicenter Study of the European Paediatric Orthopaedic Society

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    The results of functional treatment using the Pavlik harness in congenital dislocation and congenital dysplasia of the hip in children aged less than 11 months were examined by an EPOS study group. This study was conducted on 3,611 hips in 2,636 patients for a period of 1-9 years after treatment. The reduction rate was 92% in grade Tonnis 2 and 3; the healing rate was 80%. In children with dysplastic hips, the healing rate was 95.35%. Avascular necrosis of the femoral head was observed in 2.38%. The Pavlik harness is designed for outpatient treatment if the parents are complian

    High resolution studies of low-energy electron attachment to SF5Cl: Product anions and absolute cross sections

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    Low energy electron attachment to SF5_5Cl was studied at high energy resolution by mass spectrometric detection of the product anions. Two variants of the laser photoelectron attachment (LPA) technique (Kaiserslautern) were used for determining the threshold behaviour of the yield for SF5_5^- formation at about 1 meV resolution, and to investigate the relative cross sections for Cl^-, FCl^-, and SF5_5^- formation towards higher energies (up to 1 eV) at about 20 meV resolution. Thermal swarm measurements (Birmingham) were used to place the relative LPA cross sections on an absolute scale. A trochoidal electron monochromator (Innsbruck) was used for survey measurements of the relative cross sections for the different product anions over the energy range of 0-14 eV with a resolution of 0.30 eV. Combined with earlier beam data (taken at Berlin, J. Chem. Phys. 88 (1988) 149), the present experimental results provide a detailed set of partial cross sections for anion formation in low-energy electron collisions with SF5_5Cl

    Excitonic photoluminescence in symmetric coupled double quantum wells subject to an external electric field

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    The effect of an external electric field F on the excitonic photoluminescence (PL) spectra of a symmetric coupled double quantum well (DQW) is investigated both theoretically and experimentally. We show that the variational method in a two-particle electron-hole wave function approximation gives a good agreement with measurements of PL on a narrow DQW in a wide interval of F including flat-band regime. The experimental data are presented for an MBE-grown DQW consisting of two 5 nm wide GaAs wells, separated by a 4 monolayers (MLs) wide pure AlAs central barrier, and sandwiched between Ga_{0.7}Al_{0.3}As layers. The bias voltage is applied along the growth direction. Spatially direct and indirect excitonic transitions are identified, and the radius of the exciton and squeezing of the exciton in the growth direction are evaluated variationally. The excitonic binding energies, recombination energies, oscillator strengths, and relative intensities of the transitions as functions of the applied field are calculated. Our analysis demonstrates that this simple model is applicable in case of narrow DQWs not just for a qualitative description of the PL peak positions but also for the estimation of their individual shapes and intensities.Comment: 5 pages, 4 figures (accepted in Phys. Rev. B

    Characterization of DC performance and low-frequency noise of an array of nMOS Forksheets from 300 K to 4 K

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    The DC and low-frequency noise performance of an array of 800 parallel Forksheet MOSFETs were investigated by performing measurements over a wide temperature range from 300 K to 4 K. The array structure allowed to measure a representative average performance of the devices and provided a large effective area for 1/f noise analysis. Results showed an improvement in the saturation drain current when going from room temperature to cryogenic temperatures, with the subthreshold swing saturating around 100 K and the threshold voltage shifting by approximately 150 mV, following similar trends observed in Silicon cryogenic electronics. Additionally, the study confirms that the noise at cryogenic temperatures does not follow the commonly assumed linear scaling with temperature. This deviation from the linear scaling has been associated with the presence of tail states at the interface in bulk and silicon-on-insulator (SOI) devices. These results suggest that the excess 1/f noise in this advanced device architecture is not related to the device architecture but rather to the microscopic material properties of semiconductor/dielectric interfaces
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