201 research outputs found
Axonal Odorant Receptors Mediate Axon Targeting
In mammals, odorant receptors not only detect odors but also define the target in the olfactory bulb, where sensory neurons project to give rise to the sensory map. The odorant receptor is expressed at the cilia, where it binds odorants, and at the axon terminal. The mechanism of activation and function of the odorant receptor at the axon terminal is, however, still unknown. Here, we identify phosphatidylethanolamine- binding protein 1 as a putative ligand that activates the odorant receptor at the axon terminal and affects the turning behavior of sensory axons.Genetic ablation of phosphatidylethanolamine-binding protein 1 in mice results in a strongly disturbed olfactory sensory map. Our data suggest that the odorant receptor at the axon terminal of olfactory neurons acts as an axon guidance cue that responds to molecules originating in the olfactory bulb. The dual function of the odorant receptor links specificity of odor perception and axon targeting
An efficient algorithm to calculate intrinsic thermoelectric parameters based on Landauer approach
The Landauer approach provides a conceptually simple way to calculate the
intrinsic thermoelectric (TE) parameters of materials from the ballistic to the
diffusive transport regime. This method relies on the calculation of the number
of propagating modes and the scattering rate for each mode. The modes are
calculated from the energy dispersion (E(k)) of the materials which require
heavy computation and often supply energy relation on sparse momentum (k)
grids. Here an efficient method to calculate the distribution of modes (DOM)
from a given E(k) relationship is presented. The main features of this
algorithm are, (i) its ability to work on sparse dispersion data, and (ii)
creation of an energy grid for the DOM that is almost independent of the
dispersion data therefore allowing for efficient and fast calculation of TE
parameters. The inclusion of scattering effects is also straight forward. The
effect of k-grid sparsity on the compute time for DOM and on the sensitivity of
the calculated TE results are provided. The algorithm calculates the TE
parameters within 5% accuracy when the K-grid sparsity is increased up to 60%
for all the dimensions (3D, 2D and 1D). The time taken for the DOM calculation
is strongly influenced by the transverse K density (K perpendicular to
transport direction) but is almost independent of the transport K density
(along the transport direction). The DOM and TE results from the algorithm are
bench-marked with, (i) analytical calculations for parabolic bands, and (ii)
realistic electronic and phonon results for .Comment: 16 Figures, 3 Tables, submitted to Journal of Computational
electronic
Classification of Light-Induced Desorption of Alkali Atoms in Glass Cells Used in Atomic Physics Experiments
We attempt to provide physical interpretations of light-induced desorption
phenomena that have recently been observed for alkali atoms on glass surfaces
of alkali vapor cells used in atomic physics experiments. We find that the
observed desorption phenomena are closely related to recent studies in surface
science, and can probably be understood in the context of these results. If
classified in terms of the photon-energy dependence, the coverage and the
bonding state of the alkali adsorbates, the phenomena fall into two categories:
It appears very likely that the neutralization of isolated ionic adsorbates by
photo-excited electron transfer from the substrate is the origin of the
desorption induced by ultraviolet light in ultrahigh vacuum cells. The
desorption observed in low temperature cells, on the other hand, which is
resonantly dependent on photon energy in the visible light range, is quite
similar to light-induced desorption stimulated by localized electronic
excitation on metallic aggregates. More detailed studies of light-induced
desorption events from surfaces well characterized with respect to alkali
coverage-dependent ionicity and aggregate morphology appear highly desirable
for the development of more efficient alkali atom sources suitable to improve a
variety of atomic physics experiments.Comment: 6 pages, 1 figure; minor corrections made, published in e-Journal of
Surface Science and Nanotechnology at
http://www.jstage.jst.go.jp/article/ejssnt/4/0/4_63/_articl
Electronic properties and Fermi surface of Ag(111) films deposited onto H-passivated Si(111)-(1x1) surfaces
Silver films were deposited at room temperature onto H-passivated Si(111)
surfaces. Their electronic properties have been analyzed by angle-resolved
photoelectron spectroscopy. Submonolayer films were semiconducting and the
onset of metallization was found at a Ag coverage of 0.6 monolayers. Two
surface states were observed at -point in the metallic films,
with binding energies of 0.1 and 0.35 eV. By measurements of photoelectron
angular distribution at the Fermi level in these films, a cross-sectional cut
of the Fermi surface was obtained. The Fermi vector determined along different
symmetry directions and the photoelectron lifetime of states at the Fermi level
are quite close to those expected for Ag single crystal. In spite of this
concordance, the Fermi surface reflects a sixfold symmetry rather than the
threefold symmetry of Ag single crystal. This behavior was attributed to the
fact that these Ag films are composed by two domains rotated 60.Comment: 9 pages, 8 figures, submitted to Physical Review
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