Preparation and characterization of sprayed FTO thin films

Fluorine doped tin oxide (FTO) thin films have been prepared by spray pyrolysis technique with no further annealing. Films with 2.5% of fluorine grown at 400 °C present a single phase and exhibit a tetragonal structure with lattice parameters a = 4.687 Å and c = 3.160 Å. Scanning electron micrographs showed homogeneous surfaces with average grain size around 190 nm. The films are transparent in the visible zone and exhibit a high reflectance in the near infrared region. The best electrical resistivity was 6.3 × 10-4 Ω cm for FTO with 2.5% of fluorine. The ratio of transmittance in the visible to the sheet resistance are in the 0.57 × 10-2–1.96 × 10-2 Ω-1 range

Thin films for CIS solar tells

In this paper, we present our Studies on three materials CuInS2, ZnO and CdS which can be used to elaborate CIS solar cells. For instance, we have used spray pyrolysis and chemical bath deposition to prepare these compounds. Sprayed CuInS2 thin films have exhibited a preferential (112) orientation with chalcopyrite structure and p type conductivity. Their energy gap value was around 1.45 eV, which perfectly matches the solar spectrum. We also studied the Cu:In :S ratio effect on its properties. Sprayed Undoped and indium-doped ZnO films were highly transparent since their energy gap value was 3.2eV. The films were polycrystalline and exhibited an hexagonal wurtzite-type structure. Their orientation was modified by an adequate indium doping which leads to a resistivity value of about 10-3 Wcm. Homogeneous and strongly adherent CdS very thin layers of about 70 nm were prepared by CBD Process. The obtained films have showed preferential orientation which changes from (002) to (101) with growth temperature and annealing treatment. CdS was very resistive with an energy gap around 2.37eV.In this paper, we present our Studies on three materials CuInS2, ZnO and CdS which can be used to elaborate CIS solar cells. For instance, we have used spray pyrolysis and chemical bath deposition to prepare these compounds. Sprayed CuInS2 thin films have exhibited a preferential (112) orientation with chalcopyrite structure and p type conductivity. Their energy gap value was around 1.45 eV, which perfectly matches the solar spectrum. We also studied the Cu:In :S ratio effect on its properties. Sprayed Undoped and indium-doped ZnO films were highly transparent since their energy gap value was 3.2eV. The films were polycrystalline and exhibited an hexagonal wurtzite-type structure. Their orientation was modified by an adequate indium doping which leads to a resistivity value of about 10-3 Wcm. Homogeneous and strongly adherent CdS very thin layers of about 70 nm were prepared by CBD Process. The obtained films have showed preferential orientation which changes from (002) to (101) with growth temperature and annealing treatment. CdS was very resistive with an energy gap around 2.37eV