Thin films for CIS solar tells

Abstract

In this paper, we present our Studies on three materials CuInS2, ZnO and CdS which can be used to elaborate CIS solar cells. For instance, we have used spray pyrolysis and chemical bath deposition to prepare these compounds. Sprayed CuInS2 thin films have exhibited a preferential (112) orientation with chalcopyrite structure and p type conductivity. Their energy gap value was around 1.45 eV, which perfectly matches the solar spectrum. We also studied the Cu:In :S ratio effect on its properties. Sprayed Undoped and indium-doped ZnO films were highly transparent since their energy gap value was 3.2eV. The films were polycrystalline and exhibited an hexagonal wurtzite-type structure. Their orientation was modified by an adequate indium doping which leads to a resistivity value of about 10-3 Wcm. Homogeneous and strongly adherent CdS very thin layers of about 70 nm were prepared by CBD Process. The obtained films have showed preferential orientation which changes from (002) to (101) with growth temperature and annealing treatment. CdS was very resistive with an energy gap around 2.37eV.In this paper, we present our Studies on three materials CuInS2, ZnO and CdS which can be used to elaborate CIS solar cells. For instance, we have used spray pyrolysis and chemical bath deposition to prepare these compounds. Sprayed CuInS2 thin films have exhibited a preferential (112) orientation with chalcopyrite structure and p type conductivity. Their energy gap value was around 1.45 eV, which perfectly matches the solar spectrum. We also studied the Cu:In :S ratio effect on its properties. Sprayed Undoped and indium-doped ZnO films were highly transparent since their energy gap value was 3.2eV. The films were polycrystalline and exhibited an hexagonal wurtzite-type structure. Their orientation was modified by an adequate indium doping which leads to a resistivity value of about 10-3 Wcm. Homogeneous and strongly adherent CdS very thin layers of about 70 nm were prepared by CBD Process. The obtained films have showed preferential orientation which changes from (002) to (101) with growth temperature and annealing treatment. CdS was very resistive with an energy gap around 2.37eV