Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices

Szekeres A, Nikolova T, Simeonov S, Gushterov A, Hamelmann F, Heinzmann U. Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices. MICROELECTRONICS JOURNAL. 2006;37(1):64-70.Silicon oxynitride films have been deposited on Si substrates at 200 degrees C by a remote-plasma-assisted process in a RF-plasma CVD reactor using Si(OC2H5)(4) (TEOS) as a precursor and nitrogen as gas ambient. During deposition the Si substrates were biased with negative voltages of - 120 and - 600 V or were under no DC bias and the influence of this voltage on the film properties has been considered. Film parameters, such as density, chemical bonds, refractive index, composition, oxide and interface charge densities of the deposited dielectric films have been estimated by analysis of the results from the infrared (IR) spectroscopy, spectral ellipsometry (SE) and capacitance-voltage (C-V) measurements. The IR and SE results have proven the films are oxynitrides of silicon with predominantly oxide network. The analysis of the capacitance-voltage characteristics has shown that the dielectric charge densities increase with increasing DC bias but they remain considerably low in comparison to that for a standard SiO2/Si structure before any annealing steps. (c) 2005 Elsevier Ltd. All rights reserved

Electrical properties of plasma-assisted CVD deposited thin silicon oxynitride films

Szekeres A, Simeonov S, Gushterov A, Nikolova T, Hamelmann F, Heinzmann U. Electrical properties of plasma-assisted CVD deposited thin silicon oxynitride films. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS. 2005;7(1):553-556.The electrical properties of MIS structures with silicon oxynitride films, deposited at 200 degrees C in a RF-plasma CVD reactor using Si(OC2H5)(4) (TEOS) as a precursor and nitrogen as the gas ambient have been studied. The analysis of the capacitance-voltage and current-voltage characteristics has shown that a larger DC bias yields larger densities of dielectric charge and interface traps in the growing films, and therefore, a lower specific resistivity of the SiOxNy films

Plasma-assisted deposition of thin silicon oxide films in a remote PECVD reactor and characterization of films produced under different conditions

Hamelmann F, Aschentrup A, Brechling A, et al. Plasma-assisted deposition of thin silicon oxide films in a remote PECVD reactor and characterization of films produced under different conditions. Vacuum. 2004;75(4):307-312.Silicon oxide thin films have been deposited in plasma-assisted CVD process. With tetraethylorthosilcate (TEOS, Si(OC2H5)(4)) as precursor and an oxygen RF-plasma, thin films of 50-100 nm were deposited on silicon wafers. The deposition process was controlled in situ by monitoring the soft X-ray reflectivity of the growing layer. The influence of additional gases such as nitrogen and changes of the plasma conditions on the resulting films have been studied by analyzing the films with grazing incidence X-ray reflectometry, infrared spectroscopy, spectral ellipsometry and capacitance-voltage and current-voltage measurements were performed at different temperatures. (C) 2004 Elsevier Ltd. All rights reserved