Szekeres A, Simeonov S, Gushterov A, Nikolova T, Hamelmann F, Heinzmann U. Electrical properties of plasma-assisted CVD deposited thin silicon oxynitride films. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS. 2005;7(1):553-556.The electrical properties of MIS structures with silicon oxynitride films, deposited at 200 degrees C in a RF-plasma CVD reactor using Si(OC2H5)(4) (TEOS) as a precursor and nitrogen as the gas ambient have been studied. The analysis of the capacitance-voltage and current-voltage characteristics has shown that a larger DC bias yields larger densities of dielectric charge and interface traps in the growing films, and therefore, a lower specific resistivity of the SiOxNy films
