11 research outputs found

    Morphoea Profunda Presenting with Atrophic Skin Lesions in a 26 Year Old Female: A Case Report

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    Morphoea Profunda is a rare variant of Morphoea that presents clinically as a solitary fibrotic plaque. Morphoea Profunda presenting with atrophic lesions has rarely been reported in literature. We report the case of a 26 year old Nepalese lady who presented to us with multiple non-inflammatory atrophic lesions on her body without significant skin induration, pigmentation and texture change. The findings on histopathology confirmed a diagnosis of Morphoea Profunda. Hence, Morphoea Profunda should be considered in the differential diagnosis of anyone presenting with asymptomatic atrophy of the skin

    Field enhancement of epsilon-near-zero modes in realistic ultrathin absorbing films

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    Using electrodynamical description of the average power absorbed by a conducting film, we present an expression for the electric-field intensity enhancement (FIE) due to epsilon-near-zero (ENZ) polariton modes. We show that FIE reaches a limit in ultrathin ENZ films inverse of second power of ENZ losses. This is illustrated in an exemplary series of aluminum-doped zinc oxide nanolayers grown by atomic layer deposition. Only in a case of unrealistic lossless ENZ films, FIE follows the inverse second power of film thickness predicted by S. Campione, et al. [Phys. Rev. B, vol. 91, no. 12, art. 121408, 2015]. We also predict that FIE could reach values of 100,000 in ultrathin polar semiconductor films. This work is important for establishing the limits of plasmonic field enhancement and the development of near zero refractive index photonics, nonlinear optics, thermal, and quantum optics in the ENZ regime.publishedVersionPeer reviewe

    REMA 1000

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    Knowledge and Understanding of Personal Protective Equipment Use among Laborer Population of the Nepalese Workforce

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    The constructing laborers are mainly unskilled, untrained, migrant, socially backward, and uneducated with low bargaining power. Thus, we assessed the knowledge and prevalence on occupational safety and health (OSH) of laborers working at private constructing sites. A descriptive cross-sectional study of 229 laborers working at private constructing sites selected by 30 cluster sampling methods from the Lalitpur metropolitan city and Mahalaxmi municipality was conducted using a structured questionnaire and observation checklist. EpiData and SPSS were used for data analysis. Most of the laborers (62%) had inadequate knowledge on OSH. The level of knowledge was significantly associated with sex, education, and family type at 95% CI (p value < 0.05). The prevalence of occupational accidents within a year was 19.7% and was significantly associated with the use of Personal Protective Equipment (PPE) at 95% CI (p value < 0.05). About one-fifth of the participants had occupational accidents within a year because of the inadequate knowledge of OSH

    Field enhancement of epsilon-near-zero modes in realistic ultrathin absorbing films

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    Using electrodynamical description of the average power absorbed by a conducting film, we present an expression for the electric-field intensity enhancement (FIE) due to epsilon-near-zero (ENZ) polariton modes. We show that FIE reaches a limit in ultrathin ENZ films inverse of second power of ENZ losses. This is illustrated in an exemplary series of aluminum-doped zinc oxide nanolayers grown by atomic layer deposition. Only in a case of unrealistic lossless ENZ films, FIE follows the inverse second power of film thickness predicted by S. Campione, et al. [Phys. Rev. B, vol. 91, no. 12, art. 121408, 2015]. We also predict that FIE could reach values of 100,000 in ultrathin polar semiconductor films. This work is important for establishing the limits of plasmonic field enhancement and the development of near zero refractive index photonics, nonlinear optics, thermal, and quantum optics in the ENZ regime

    Gate-Tunable Plasmon-Induced Transparency Modulator Based on Stub-Resonator Waveguide with Epsilon-Near-Zero Materials

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    Abstract We demonstrate an electrically tunable ultracompact plasmonic modulator with large modulation strength (>10 dB) and a small footprint (~1 μm in length) via plasmon-induced transparency (PIT) configuration. The modulator based on a metal-oxide-semiconductor (MOS) slot waveguide structure consists of two stubs embedded on the same side of a bus waveguide forming a coupled system. Heavily n-doped indium tin oxide (ITO) is used as the semiconductor in the MOS waveguide. A large modulation strength is realized due to the formation of the epsilon-near-zero (ENZ) layer at the ITO-oxide interface at the wavelength of the modulated signal. Numerical simulation results reveal that such a significant modulation can be achieved with a small applied voltage of ~3V. This result shows promise in developing nanoscale modulators for next generation compact photonic/plasmonic integrated circuits
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