AlGaAs/GaAs Quantum Well Infrared Photodetectors

In this article, we present an overview of a focal plane array (FPA) with 640 × 512 pixels based on the AlGaAs quantum well infrared photodetector (QWIP). The physical principles of the QWIP operation and their parameters for the spectral range of 8–10 μm have been discussed. The technology of the manufacturing FPA based on the QWIP structures with the pixels 384 × 288 and 640 × 512 has been demonstrated. The parameters of the manufactured 640 × 512 FPA with a step of 20 μm have been given. At the operating temperature of 72 K, the temperature resolution of QWIP focal plane arrays is less than 35 mK. The number of defective elements in the matrix does not exceed 0.5%. The stability and uniformity of the FPA have been demonstrated

Electron and hole injection barriers between silicon substrate and RF magnetron sputtered In2O3 : Er films

In2O3 : Er films have been synthesized on silicon substrates by RF magnetron sputter deposition. The currents through the synthesized metal/oxide/semiconductor (MOS) structures (Si/In2O3 : Er/In-contact) have been measured for n and p type conductivity silicon substrates and described within the model of majority carrier thermoemission through the barrier, with bias voltage correction to the silicon potential drop. The electron and hole injection barriers between the silicon substrate and the film have been found to be 0.14 and 0.3 eV, respectively, by measuring the temperature dependence of the forward current at a low sub-barrier bias. The resulting low hole injection barrier is accounted for by the presence of defect state density spreading from the valence band edge into the In2O3 : Er band gap to form a hole conduction channel. The presence of defect state density in the In2O3 : Er band gap is confirmed by photoluminescence data in the respective energy range 1.55–3.0 eV. The band structure of the Si/In2O3 : Er heterojunction has been analyzed. The energy gap between the In2O3 : Er conduction band electrons and the band gap conduction channel holes has been estimated to be 1.56 eV

Formation of SnO and SnO2 phases during the annealing of SnO(x) films obtained by molecular beam epitaxy

SnO and SnO2 films were obtained on the SiO2 surface by the molecular-beam epitaxy method. The initial film

Electron and hole injection barriers between silicon substrate and RF magnetron sputtered In2O3 : Er films

In2O3 : Er films have been synthesized on silicon substrates by RF magnetron sputter deposition. The currents through the synthesized metal/oxide/semiconductor (MOS) structures (Si/In2O3 : Er/In-contact) have been measured for n and p type conductivity silicon substrates and described within the model of majority carrier thermoemission through the barrier, with bias voltage correction to the silicon potential drop. The electron and hole injection barriers between the silicon substrate and the film have been found to be 0.14 and 0.3 eV, respectively, by measuring the temperature dependence of the forward current at a low sub-barrier bias. The resulting low hole injection barrier is accounted for by the presence of defect state density spreading from the valence band edge into the In2O3 : Er band gap to form a hole conduction channel. The presence of defect state density in the In2O3 : Er band gap is confirmed by photoluminescence data in the respective energy range 1.55–3.0 eV. The band structure of the Si/In2O3 : Er heterojunction has been analyzed. The energy gap between the In2O3 : Er conduction band electrons and the band gap conduction channel holes has been estimated to be 1.56 eV

Effect of Sn for the dislocation-free SiSn nanostructure formation on the vapor-liquid-crystal mechanism

Structures with tin-rich island arrays on silicon pedestals were obtained by molecular beam epitaxy using Sn as a catalyst for the growth of nanostructures. A tin island array was used further to study the growth of nanostructures in the process of Si deposition on the surface with Sn islands. It was established that, during the growth on the vapor-liquid-crystal mechanism, tin-rich islands are formed on faceted pedestals. A nanostructured cellular surface was formed between the islands on pedestals. The analysis of the elemental composition of the obtained nanostructures was performed by the methods of energy dispersive X-ray spectroscopy and photoelectron spectroscopy. It is shown that tin-rich islands can contain up to 90% tin, whereas the pedestal consists of silicon. The transmission electron microscopy data demonstrated a distinct crystal structure of tin-rich islands and silicon pedestals, as well as the absence of dislocations in the structures with island arrays on the faceted pedestals. The facet tilt angle is 19° and corresponds to the (311) plane. The photoluminescence signal was observed with a photoluminescence maximum near the wavelength of 1.55 μm

Neuroprotective Effects of Mitochondria-Targeted Plastoquinone in a Rat Model of Neonatal Hypoxic–Ischemic Brain Injury

Neonatal hypoxia–ischemia is one of the main causes of mortality and disability of newborns. To study the mechanisms of neonatal brain cell damage, we used a model of neonatal hypoxia–ischemia in seven-day-old rats, by annealing of the common carotid artery with subsequent hypoxia of 8% oxygen. We demonstrate that neonatal hypoxia–ischemia causes mitochondrial dysfunction associated with high production of reactive oxygen species, which leads to oxidative stress. Targeted delivery of antioxidants to the mitochondria can be an effective therapeutic approach to treat the deleterious effects of brain hypoxia–ischemia. We explored the neuroprotective properties of the mitochondria-targeted antioxidant SkQR1, which is the conjugate of a plant plastoquinone and a penetrating cation, rhodamine 19. Being introduced before or immediately after hypoxia–ischemia, SkQR1 affords neuroprotection as judged by the diminished brain damage and recovery of long-term neurological functions. Using vital sections of the brain, SkQR1 has been shown to reduce the development of oxidative stress. Thus, the mitochondrial-targeted antioxidant derived from plant plastoquinone can effectively protect the brain of newborns both in pre-ischemic and post-stroke conditions, making it a promising candidate for further clinical studies