Dopant imaging of power semiconductor device cross sections

Several Scanning Probe Microscopy (SPM) methods allow to image dopant profiles in a range from 10(14) cm(-3) to 10(19) cm(-3) on semiconducting samples. In our work we present Scanning Capacitance Force Microscopy (SCFM) and Kelvin Probe Force Microscopy (KPFM) experiments performed on cross sections of silicon (Si) and silicon carbide (SiC) power devices and epitaxially grown calibration layers. The contact potential difference (CPD) shows under illumination a reduced influence on surface defect states. In addition results from numerical simulation of these microscope methods are discussed. (C) 2016 Elsevier B.V. All rights reserved

Symmetry-dependent Mn-magnetism in Al 69.8 Pd 12.1 Mn 18.1

We investigated the stability of magnetic moments in Al 69.8 Pd 12.1 Mn 18. 1 . This alloy exists in both, the icosahedral (i) and the decagonal (d) quasicrystalline form. The transition from the i- to the d-phase is achieved by a simple heat treatment. We present the results of measurements of the 27 Al NMR-response, the dc magnetic susceptibility, and the low-temperature specific heat of both phases. In the icosahedral compound, the majority of the Mn ions carries a magnetic moment. Their number is reduced by approximately a factor of two by transforming the alloy to its decagonal variety. For both compounds, we have indications for two different local environments of the Al nuclei. The first reflects a low density of states of conduction electrons and a weak coupling of the Al nuclei to the Mn-moments. The second type of environment implies a large d-electron density of states at the Fermi level and a strong coupling to the magnetic Mn moments. Spin-glass freezing transitions are observed at T deca f =12 K for the decagonal, and T ico f =19 K for the icosahedral phase. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2005