Cross-CBAM: A Lightweight network for Scene Segmentation

Scene parsing is a great challenge for real-time semantic segmentation. Although traditional semantic segmentation networks have made remarkable leap-forwards in semantic accuracy, the performance of inference speed is unsatisfactory. Meanwhile, this progress is achieved with fairly large networks and powerful computational resources. However, it is difficult to run extremely large models on edge computing devices with limited computing power, which poses a huge challenge to the real-time semantic segmentation tasks. In this paper, we present the Cross-CBAM network, a novel lightweight network for real-time semantic segmentation. Specifically, a Squeeze-and-Excitation Atrous Spatial Pyramid Pooling Module(SE-ASPP) is proposed to get variable field-of-view and multiscale information. And we propose a Cross Convolutional Block Attention Module(CCBAM), in which a cross-multiply operation is employed in the CCBAM module to make high-level semantic information guide low-level detail information. Different from previous work, these works use attention to focus on the desired information in the backbone. CCBAM uses cross-attention for feature fusion in the FPN structure. Extensive experiments on the Cityscapes dataset and Camvid dataset demonstrate the effectiveness of the proposed Cross-CBAM model by achieving a promising trade-off between segmentation accuracy and inference speed. On the Cityscapes test set, we achieve 73.4% mIoU with a speed of 240.9FPS and 77.2% mIoU with a speed of 88.6FPS on NVIDIA GTX 1080Ti

Trmt112 Gene Expression in Mouse Embryonic Development

Mouse Trmt112, the homologous gene of yeast Trm112 (tRNA methyltransferase 11-2), was initially cloned from RIKEN with uncertain function. The yeast TRM112 is now known to play important roles in RNA methylation. Here, we studied the expression of Trmt112 by in situ hybridization and quantitative real-time RT-PCR (QRT-PCR). A higher expression level of Trmt112 was observed in the brain and nervous system by whole mount in situ hybridization from embryonic day 10.5 (E10.5) to E11.5. At later developmental stages E13.5 and E16.5, abundant expression was prominently found in various organs and tissues including developing brain, nervous system, thymus, lung, liver, intestine, kidney, and cartilage. Furthermore, Trmt112 was persistently expressed from E9.5 to E18.5 on whole embryos and highly expressed in multiple organs at E12.5, E15.5 and E18.5 by QRT-PCR. These results showed that Trmt112 gene was highly and ubiquitously expressed during mouse embryonic development, implying that it might be involved in the morphogenesis of diverse organs and tissues and numerous physiological functions

Prominent Size Effects without a Depolarization Field Observed in Ultrathin Ferroelectric Oxide Membranes

The increasing miniaturization of electronics requires a better understanding of material properties at the nanoscale. Many studies have shown that there is a ferroelectric size limit in oxides, below which the ferroelectricity will be strongly suppressed due to the depolarization field, and whether such a limit still exists in the absence of the depolarization field remains unclear. Here, by applying uniaxial strain, we obtain pure in-plane polarized ferroelectricity in ultrathin SrTiO3 membranes, providing a clean system with high tunability to explore ferroelectric size effects especially the thickness-dependent ferroelectric instability with no depolarization field. Surprisingly, the domain size, ferroelectric transition temperature, and critical strain for room-temperature ferroelectricity all exhibit significant thickness dependence. These results indicate that the stability of ferroelectricity is suppressed (enhanced) by increasing the surface or bulk ratio (strain), which can be explained by considering the thickness-dependent dipole-dipole interactions within the transverse Ising model. Our study provides new insights into ferroelectric size effects and sheds light on the applications of ferroelectric thin films in nanoelectronics

Enhanced polarization and abnormal flexural deformation in bent freestanding perovskite oxides

Recent realizations of ultrathin freestanding perovskite oxides offer a unique platform to probe novel properties in two-dimensional oxides. Here, we observe a giant flexoelectric response in freestanding BiFeO3 and SrTiO3 in their bent state arising from strain gradients up to 3.5 × 107 m−1, suggesting a promising approach for realizing ultra-large polarizations. Additionally, a substantial change in membrane thickness is discovered in bent freestanding BiFeO3, which implies an unusual bending-expansion/shrinkage effect in the ferroelectric membrane that has never been seen before in crystalline materials. Our theoretical model reveals that this unprecedented flexural deformation within the membrane is attributable to a flexoelectricity–piezoelectricity interplay. The finding unveils intriguing nanoscale electromechanical properties and provides guidance for their practical applications in flexible nanoelectromechanical systems

Giant Switchable Persistent Photoconductivity in Soft Chemistry Reduced SrTiO3

Abstract High tunability of photoconductivity is highly desired for applications in optical memories, sensors, and bioelectronics. Recently, room temperature persistent photoconductivity (PPC) in SrTiO3 (STO) has been revealed and has attracted great attention. However, reversible switching of the PPC in STO with a large on/off ratio remains challenging to date. Here, a giant switchable PPC in soft chemistry reduced STO is reported. An initial insulator‐to‐metal transition with on/off ratio up to 7 orders of magnitude is observed and about 5 orders of magnitude transition is found to be reversible. Via nuclear magnetic resonance measurements, it is uncovered that such unusual PPC is driven by the generation of excess carriers accompanied with a configuration evolution of the incorporated hydrogen from hydridic HO+ to protic Hi+ upon illumination. The work demonstrates giant switchable PPC transition in soft chemistry reduced perovskite oxides, providing a new platform for pursuing high performance sensors and nonvolatile optoelectronic memory devices

Evidence for quasi-two-dimensional superconductivity in infinite-layer nickelates

After being expected as a promising analogue to cuprates for decades, superconductivity was recently discovered in infinite-layer nickelates, providing new opportunities to explore mechanisms of high-temperature superconductivity. However, in sharp contrast to the single-band quasi-two-dimensional superconductivity in cuprates, nickelates exhibit a multi-band electronic structure and an unexpected isotropic superconductivity as reported recently, which challenges the cuprate-like picture in nickelates. Here, we show the superconductivity in nickelates is actually anisotropic and quasi-two-dimensional in nature, as that in cuprates. By synthesizing high-quality lanthanide nickelate films with enhanced crystallinity and superconductivity ($T_{c}^{onset}$ = 18.8 K, $T_{c}^{zero}$ = 16.5 K), strong anisotropic magnetotransport behaviors have been observed. The quasi-two-dimensional nature is further confirmed by the existence of a cusp-like peak of the angle-dependent $T_{c}$, and a Berezinskii-Kosterlitz-Thouless transition near $T_{c}$. Our work thus suggests a quasi-two-dimensional superconductivity in infinite-layer nickelates, implying a single-3$d_{x^2-y^2}$-band cuprate-like picture may remain valid in these compounds.Comment: 32 pages, 4 main figures, 6 extended dat

Nonvolatile ferroelectric domain wall memory integrated on silicon

Ferroelectric domain wall memories have been proposed as a promising candidate for nonvolatile memories, given their intriguing advantages including low energy consumption and high-density integration. Perovskite oxides possess superior ferroelectric prosperities but perovskite-based domain wall memory integrated on silicon has rarely been reported due to the technical challenges in the sample preparation. Here, we demonstrate a domain wall memory prototype utilizing freestanding BaTiO3 membranes transferred onto silicon. While as-grown BaTiO3 films on (001) SrTiO3 substrate are purely c-axis polarized, we find they exhibit distinct in-plane multidomain structures after released from the substrate and integrated onto silicon due to the collective effects from depolarizing field and strain relaxation. Based on the strong in-plane ferroelectricity, conductive domain walls with reading currents up to nanoampere are observed and can be both created and erased artificially, highlighting the great potential of the integration of perovskite oxides with silicon for ferroelectric domain wall memories