Experimental and Mathematical Analysis of Multilayer Insulation below 80 K

The Large Hadron Collider [1], presently under construction at CERN, will make an extensive use of multilayer insulation system (MLI). The total surface to be insulated will be of about 80000 m2. A mathematical model has been developed to describe the heat flux through MLI from 80 K to 4.2 K. The total heat flux between the layers is the result of three distinct heat transfer modes: radiation, residual gas conduction and solid conduction. The mathematical model enables prediction of MLI behavior with regard to different MLI parameters, such as gas insulation pressure, number of layers and boundary temperatures. The calculated values have been compared to the experimental measurements carried out at CERN. Theoretical and experimental results revealed to be in good agreement, especially for insulation vacuum between 10-5 Pa and 10-3 Pa

Optimisation of Multilayer Insulation: an Engineering Approach

A mathematical model has been developed to describe the heat flux through multilayer insulation (MLI). The total heat flux between the layers is the result of three distinct heat transfer modes: radiation, residual gas conduction and solid spacer conduction. The model describes the MLI behaviour considering a layer-to-layer approach and is based on an electrical analogy, in which the three heat transfer modes are treated as parallel thermal impedances. The values of each of the transfer mode vary from layer to layer, although the total heat flux remains constant across the whole MLI blanket. The model enables the optimisation of the insulation with regard to different MLI parameters, such as residual gas pressure, number of layers and boundary temperatures. The model has been tested with experimental measurements carried out at CERN and the results revealed to be in a good agreement, especially for insulation vacuum between 10-5 Pa and 10-3 Pa

Modelling of Helium-mediated Quench Propagation in the LHC Prototype Test String-1

The Large Hadron Collider (LHC) prototype test string-1, hereafter referred to as the string, is composed of three ten-meter long prototype dipole magnets and one six-meter long prototype quadrupole magnet. The magnets are immersed in a pressurized static bath of superfluid helium that is maintained at a pressure of about 1 bar and at a temperature of about 1.9 K. This helium bath constitutes one single hydraulic unit, extending along the 42.5 m of the string length. We have measured the triggering of quenches of the string magnets due to the quenching of a single dipole magnet located at the string's extremity; i.e. "quench propagation". Previously reported measurements enabled to establish that in this configuration the quench propagation is mediated by the helium and not by the inter-magnet busbar connections [1], [2]. We present a model of helium mediated quench propagation based on the qualitative conclusions of these two previous papers, and on additional information gained from a dedicated series of quench propagation measurements that were not previously reported. We will discuss the specific mechanisms and their main parameters involved at different time scales of the propagation process, and apply the model to make quantitative predictions

Surface and electronic structure of MOCVD-grown Ga(0.92)In(0.08)N investigated by UV and X-ray photoelectron spectroscopies

The surface and electronic structure of MOCVD-grown layers of Ga(0.92)In(0.08)N have been investigated by means of photoemission. An additional feature at the valence band edge, which can be ascribed to the presence of In in the layer, has been revealed. A clean (0001)-(1x1) surface was prepared by argon ion sputtering and annealing. Stability of chemical composition of the investigated surface subjected to similar ion etching was proven by means of X-ray photoemission spectroscopy.Comment: 13 pages, 6 figure

Temperature-dependence of exciton radiative recombination in (Al,Ga)N/GaN quantum wells grown on a-plane GaN substrates

This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various thicknesses grown on bulk GaN substrates. For all quantum well samples, recombination is observed to be predominantly radiative in the low-temperature range. At higher temperatures, the escape of charge carriers from the quantum well to the (Al,Ga)N barriers is accompanied by a reduction in internal quantum efficiency. Based on the temperature-dependence of time-resolved photoluminescence experiments, we also show how the local disorder affects the exciton radiative lifetime at low temperature and the exciton non-radiative lifetime at high temperature.We acknowledge financial support from the Swiss National Science Foundation through Project No. 129715 and from the Polish National Science Center (Project DEC-2011/ 03/B/ST3/02647). The work was partially supported by the European Union within European Regional Development Fund through Innovative Economy Grant No. POIG.01.01.02-00-008/08. P.C. also acknowledges financing from the European Union Seventh Framework Program under grant agreement No. 265073

Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy

The effect of high-temperature high-pressure annealing on the residual strain, bending, and point defect redistribution of freestanding hydride vapor phase epitaxial GaN films was studied. The bending was found to be determined by the difference in the in-plane lattice parameters in the two faces of the films. The results showed a tendency of equalizing the lattice parameters in the two faces with increasing annealing temperature, leading to uniform strain distribution across the film thickness. A nonmonotonic behavior of structural parameters with increasing annealing temperature was revealed and related to the change in the point defect content under the high-temperature treatment.Peer reviewe

HIGH PRESSURE FREEZE-OUT OF ELECTRONS IN UNDOPED GaN CRYSTAL. PROOF OF EXISTENCE OF RESONANT DONOR STATE (NITROGEN VACANCY)

We investigated free carriers related opticał absorption in GaN in hydrostatic pressures up to 30 GPa. The disappearance of this absorption at pressures close to 18 GPa was explained by trapping electrons resulting from the shift of nitrogen vacancy related donor level into the GaN energy gap at high pressure. We estimated the energetic position of this level at atmospheric pressure to be about 0.8 eV above the conduction band minimum

High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates

Dislocation-free high-quality AlGaN/GaN heterostructures have been grown by molecular-beam epitaxy on semi-insulating bulk GaN substrates. Hall measurements performed in the 300 K–50 mK range show a low-temperature electron mobility exceeding 60 000 cm2/V s for an electron sheet density of 2.4×1012 cm−2. Magnetotransport experiments performed up to 15 T exhibit well-defined quantum Hall-effect features. The structures corresponding to the cyclotron and spin splitting were clearly resolved. From an analysis of the Shubnikov de Hass oscillations and the low-temperature mobility we found the quantum and transport scattering times to be 0.4 and 8.2 ps, respectively. The high ratio of the scattering to quantum relaxation time indicates that the main scattering mechanisms, at low temperatures, are due to long-range potentials, such as Coulomb potentials of ionized impurities