18 research outputs found

    Brittle-to-ductile transition in ultrathin Ta/Cu film systems

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    Current semiconductor technology demands the use of compliant substrates for flexible integrated circuits. However, the maximum total strain of such devices is often limited by the extensibility of the metallic components. Although cracking in thin films is extensively studied theoretically, little experimental work has been carried out thus far. Here, we present a systematic study of the cracking behavior of 34- to 506-nm-thick Cu films on polyamide with 3.5-to 19-nm-thick Ta interlayers. The film systems have been investigated by a synchrotron-based tensile testing technique and in situ tensile tests in a scanning electron microscope. By relating the energy release during cracking obtained from the stress-strain curves to the crack area, the fracture toughness of the Cu films can be obtained. It increases with Cu film thickness and decreases with increasing Ta film thickness. Films thinner than 70 nm exhibit brittle fracture, indicating an increasing inherent brittleness of the Cu film

    Temperature dependence of mechanical properties in ultrathin Au films with and without passivation

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    Temperature and film thickness are expected to have an influence on the mechanical properties of thin films. However, mechanical testing of ultrathin metallic films at elevated temperatures is difficult, and few experiments have been conducted to date. Here, we present a systematic study of the mechanical properties of 80-500-nm-thick polycrystalline Au films with and without SiNx passivation layers in the temperature range from 123 to 473 K. The films were tested by a novel synchrotron-based tensile testing technique. Pure Au films showed strong temperature dependence above 373 K, which may be explained by diffusional creep. In contrast, passivated samples appeared to deform by thermally activated dislocation glide. The observed activation energies for both mechanisms are considerably lower than those for the bulk material, indicating that concomitant stress relaxation mechanisms are more pronounced in the thin film geometr

    Electromechanical Behavior of Al/Al2_{2}O3_{3} Multilayers on Flexible Substrates: Insights from In Situ Film Stress and Resistance Measurements

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    A series of Al and Al/Al2_{2}O3_{3} thin-film multilayer structures on flexible polymer substrates are fabricated with a unique deposition chamber combining magnetron sputtering (Al) and atomic layer deposition (ALD, Al2_{2}O3_{3}, nominal thickness 2.4–9.4 nm) without breaking vacuum and thoroughly characterized using transmission electron microscopy (TEM). The electromechanical behavior of the multilayers and Al reference films is investigated in tension with in situ X-ray diffraction (XRD) and four-point probe resistance measurements. All films exhibit excellent interfacial adhesion, with no delamination in the investigated strain range (12%). For the first time, an adhesion-promoting naturally forming amorphous interlayer is confirmed for thin films sputter deposited onto polymers under laboratory conditions. The evolution of Al film stresses and electrical resistance reveal changes in the deformation behavior as a function of oxide thickness. Strengthening of Al is observed with increasing oxide thickness. Significant embrittlement can be avoided for oxide layer thicknesses ≤2.4 nm

    Microstructural dependence of the fracture toughness of metallic thin films: A bulge test and atomistic simulation study on single-crystalline and polycrystalline silver films

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    The microstructure contribution to the very low fracture toughness of freestanding metallic thin films was investigated by bulge fracture tests on 200-nm-thick {100} single-crystalline and polycrystalline silver films. The single-crystalline films exhibited a significantly lower fracture toughness value (KIC= 0.88 MPa m1/2) than their polycrystalline counterparts (KIC= 1.45 MPa m1/2), which was rationalized by the observation of an unusual crack initiation behavior—characterized by twinning in front of the notch tip—during in situ testing in the atomic force microscope. Twinning was also observed as a dominant deformation mechanism in atomistic simulations. This twinning tendency is explained by comparing the resolved shear stresses acting on the leading partial dislocation and the full dislocation, which allows to develop a size- and orientation-dependent twinning criterion. The fracture toughness of polycrystalline samples was found to be higher because of the energy dissipation associated with full dislocation plasticity and because of crack meandering along grain boundaries

    Brittle-to-ductile transition in ultrathin Ta/Cu film systems

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    ISSN:0884-2914ISSN:2044-532

    Deformation-induced grain growth and twinning in nanocrystalline palladium thin films

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    The microstructure and mechanical properties of nanocrystalline Pd films prepared by magnetron sputtering have been investigated as a function of strain. The films were deposited onto polyimide substrates and tested in tensile mode. In order to follow the deformation processes in the material, several samples were strained to defined straining states, up to a maximum engineering strain of 10%, and prepared for post-mortem analysis. The nanocrystalline structure was investigated by quantitative automated crystal orientation mapping (ACOM) in a transmission electron microscope (TEM), identifying grain growth and twinning/detwinning resulting from dislocation activity as two of the mechanisms contributing to the macroscopic deformation. Depending on the initial twin density, the samples behaved differently. For low initial twin densities, an increasing twin density was found during straining. On the other hand, starting from a higher twin density, the twins were depleted with increasing strain. The findings from ACOM-TEM were confirmed by results from molecular dynamics (MD) simulations and from conventional and in-situ synchrotron X-ray diffraction (CXRD, SXRD) experiments
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