Angular dependence of post-implantation damage recovery under 1 MeV electron irradiation in GaAs

The angular dependence of post-implantation defects removal in GaAs irradiated with 1 MeV electrons from a Van de Graaff accelerator has been investigated. The possible way of enhancing defect annealing consists in ionization created by electron irradiation. In this paper new results of a damage level behaviour dependent on 1 MeV electron beam angle irradiation are presented. GaAs single crystals of orientation were implanted with 150 keV As+ ions at RT and then irradiated with a scanning beam of 1 MeV electrons at some selected angles. Rutheford Backscattering Spectroscopy (RBS) of 1.7 MeV 4He+ ions were used to determine the depth distribution of defect concentration before and after electron irradiation. The results relate clearly the ionization intensity created by the electron beam with angle of incidence with respect to the GaAs orientation

Mr Ball seated at his desk in the Lands Office, Sydney, 31 October 1930, 2 [picture].

Title devised from accompanying information where available.; Part of the: Fairfax archive of glass plate negatives.; Fairfax number: 2678.; Photographer possibly named Wakefield.; Also available online at: http://nla.gov.au/nla.pic-vn6216947; Acquired from Fairfax Media, 2012